本研究於氧化鋁基板上以射頻磁控濺鍍法沉積Cr1-x-Six薄膜，以Cr1-x-Six薄膜研製出高電阻率的薄膜電阻器，並調變濺鍍參數探討其對物性及電特性之影響。藉由能量散佈光譜儀和掃描式電子顯微鏡對Cr1-x-Six薄膜進行物性分析，由EDS可觀察出濺鍍參數對Cr-Si原子比例無太大影響，而SEM可看出薄膜的結構皆為非晶結構。在Cr-Si薄膜系統中，隨著Si含量的增加，其電阻率會隨之上升。將沉積後的薄膜，在大氣下以快速熱退火，退火溫度450℃，可發現電阻率及電阻溫度係數均有明顯的影響。
本研究結果顯示，28wt%Cr-72wt%Si的薄膜在經過退火後有較大的片電阻(6833.9 Ω/sq.)和電阻率(68489 µΩ∙cm)，而55wt%Cr-45wt%Si的薄膜在退火後有較小的電阻溫度係數(49.4ppm/℃)。

In this study, high resistivity thin-film resistors using Cr1-x-Six-based materials were fabricated. To fabricate high resistivity thin-film resistors, the RF magnetron sputtering method for the growth of Cr1-x-Six thin films onto Al2O3 was adopted and the influences of the sputtering parameters on the physical and electrical properties were investigated. The surface images of the amorphous structured thin films were observed by scanning electron microscopy (SEM). The Cr-Si atomic ratio of Cr1-x-Six thin films were measured by energy dispersive spectrometer (EDS), the results showed that sputtering parameters did not obviously affect the Cr-Si atomic ratio. In Cr-Si thin films, it showed that as Si content increased the resistivity was rised. After deposition, the thin-film resistors were annealed at 450℃ under atmosphere using the rapid thermal annealing (RTA) process. It could be found that the annealing process had apparent effects on the resistivity and temperature coefficient of resistance.
After annealing, the thin film of 28wt%Cr-72wt%Si existed a larger sheet resistance (6833.9 Ω/sq.) and resistivity (68489 µΩ∙cm), on the other hand, the thin film of 55wt%Cr-45wt%Si had a lower temperature coefficient of resistance (49.4ppm/℃).

中文審定書 i
英文審定書 ii
誌謝 iii
摘要 iv
ABSTRACT v
目錄 vi
圖目錄 viii
表目錄 xii
第一章 緒論 1
1.1 研究背景 1
1.2 薄膜電阻器 2
1.3 研究動機與目的 2
第二章 理論及文獻回顧 4
2.1 濺鍍系統 4
2.1.1 電漿之理論 4
2.1.2 直流濺鍍 5
2.1.3 射頻濺鍍 5
2.1.4 磁控濺鍍 6
2.1.5 反應性濺鍍 7
2.2 薄膜沉積原理 8
2.2.1 薄膜成長機制 8
2.2.2 薄膜成長的樣式 10
2.3 薄膜的電性 12
2.3.1 片電阻 12
2.3.2 電阻率 12
2.3.3 電阻溫度係數 13
2.4 濺鍍條件對薄膜的影響 14
2.4.1 濺鍍壓力 14
2.4.2 濺鍍功率 14
2.4.3 濺鍍時間 15
第三章 實驗步驟及儀器設備介紹 15
3.1 實驗流程 16
3.1.1 基板清洗 16
3.1.2 射頻磁控濺鍍系統 17
3.1.3 紅外線加熱裝置 18
3.2 Cr-Si薄膜物性分析 19
3.2.1 Alpha-Step膜厚分析 19
3.2.2 掃描式電子顯微鏡 20
3.2.3 能量散佈光譜儀 21
3.3 Cr-Si薄膜電性分析 21
3.3.1 片電阻值的量測 21
3.3.2 電阻率的計算 22
3.3.3 電阻溫度係數 23
第四章 結果與討論 24
4.1 28Cr-72Si薄膜之特性分析 24
4.1.1 調變濺鍍功率 24
4.1.2 調變濺鍍壓力 30
4.1.3 28Cr-72Si薄膜退火 35
4.2 40Cr-60Si薄膜之特性分析 40
4.2.1 調變濺鍍功率 40
4.2.2 調變濺鍍壓力 46
4.2.3 40Cr-60Si薄膜退火 51
4.3 55Cr-45Si薄膜之特性分析 56
4.3.1 調變濺鍍功率 56
4.3.2 調變濺鍍壓力 62
4.3.3 55Cr-45Si薄膜退火 67
第五章 結論及未來展望 73
第六章 參考文獻 75

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