在資訊爆炸的時代中，人們對於記憶體在資料存取的速度及容量上有更高的需求，再加上當元件不斷微縮的情況下，使得目前較常使用的記憶體開始漸漸進入物理上的極限，因此不論是學術界或工業界都開始尋找下一世代的記憶體。
在眾多的次世代記憶體當中電阻式記憶體(resistance random access memory)是目前最具潛力可成為下一世代的記憶體，由於此記憶體為非揮發式記憶體、操作速度快、低功耗、記憶能力保持度佳(Retention)、製程與CMOS 相容性高、以及所佔據面積小等優點。
在RRAM的操作機制中，Forming是釐清一個未知的元件非常重要之研究，從本實驗團隊之研究結果中得知Forming過程的軟崩潰對於RRAM之電阻切換層是不可或缺的機制，並且從本實驗團隊先前之實驗結果得知RRAM的Forming過程與氧離子之鍊鎖效應有關，再加上藉由本實驗團隊所歸納出的結論可得知硼、碳、氮等元素是可以有效地將氧離子減速之元素，雖然已釐清RRAM Forming過程的物理機制，但截至目前為止仍然無法有效的控制RRAM在Forming過程當中薄膜崩潰的情形，因此本實驗利用先前所得出的兩大結論分別為以Forming為氧離子的鍊鎖效應以及硼、碳、氮等元素是可有效地將氧離子減速之元素這兩大結果，設計出RRAM的電阻切換層使用BNOx做為此層之材料，並且利用濺鍍機製作元件，並使用不同的材料分析儀器分析此元件之薄膜內部的情形，接著利用半導體電性量測平台搭配多元的實驗手法來加以證明BNOx元件是可以有效的抑制鍊鎖效應之情形。
由先前的實驗結果證實BNOx元件是可有效的抑制鍊鎖效應後，緊接著針對Endurance的部分來加以琢磨，而從文獻中可得知BN為low K材料，因此BN擁有將電場集中的效果，所以本實驗將BN摻入SiO2中並與HfO2互相堆疊的方式來達到實驗的目的。

In the age of information explosion, people demand high speed and capacity memory. In addition, due to the limitation of memory device, either academia or industry has begun to find the next generation of memory.
Among many possible candidates, the resistance random access memory (RRAM) is considered the most promising one which has advantages of its non-volatility, high operation speed, low power consumption, high retention capability, high device density, and flexibility to be integrated into CMOS fabrication process.
In operating mechanism of RRAM, forming is still an unknown and crucial process. In addition, the forming process is indispensable to soft-break and triggers the resistance switching. Based on our previous research, the process of forming has high relation to the knock-on effects of the oxygen ions. Therefore, we conclude that the boron (B), carbon (C), nitrogen (N) and other elements can be effectively decelerated oxygen ions during forming process. Even though people have investigated the physical mechanism of forming process, the forming results still cannot be control effectively. In this research, we apply the BNOx material as the insulator in RRAM. Electrical measurement and material analysis have been conducted to further confirm the result.
Experimental results show that the forming process of this BNOx-based RRAM can be effectively controlled. A high endurance capability RRAM is thus fabricated by inserting a BN layer, a low-permittivity material, to further concentrate the electrical field to increase device performance.

致謝 iii
中文摘要 v
Abstract vi
目錄 v
圖目錄 viii
表目錄 xiii
第一章 序論 1
1-1 前言 1
1-2 研究目的與動機 2
第二章 文獻回顧 3
2-1 記憶體發展及簡介 3
2-1-1 鐵電式記憶體(FeRAM) 4
2-1-2 磁阻式記憶體(MRAM) 5
2-1-3 相變化記憶體(PCRAM) 6
2-1-4 電阻式記憶體(RRAM) 7
2-2 電阻式記憶體切換機制 9
2-2-1 阻絲理論(Filament theory) 9
2-2-2 工作原理及可靠度參數說明 10
2-3 絕緣體載子傳導機制 12
2-3-1 歐姆傳導(Ohmic Conduction) 13
2-3-2 蕭基特發射(Schottky emission) 14
2-3-3 普爾-法蘭克發射( Poole-Frenkel emission) 16
2-3-4 跳躍傳導(Hopping) 17
2-3-5 穿隧(Tunneling) 18
第三章 實驗設備與原理 19
3-1 多靶磁控濺鍍系統( Multi-Target Sputter) 19
3-2 N&K薄膜特性分析儀(N & K analyzer) 20
3-3 傅立葉轉換紅外光譜儀 (Fourier-Transform Infrared Spectrometer) 21
3-4 X光光電子能譜儀(X-ray Photoelectron Spectroscopy) 23
3-5 電性量測系統 24
第四章 氮化硼電阻式記憶體元件製備與材料分析 27
4-1 氮化硼薄膜電阻式記憶體製備流程 27
4-1-1 氮化鈦下電極製備 28
4-1-2 氮化硼薄膜製備 29
4-1-3 白金上電極製備 30
4-2 氮化硼薄膜材料分析 31
4-2-1 FTIR化學定性分析 31
4-2-2 XPS化學定量分析 32
第五章 氮化硼薄膜元件基本特性機制之研究 34
5-1 氮化硼薄膜元件電性及基本特性 34
5-1-1 氮化硼薄膜元件量測特性 34
5-1-2 氮化硼薄膜元件絕緣層載子傳導機制擬合 38
5-1-3 氮化硼薄膜元件可靠度測試 40
5-2 氮化硼薄膜元件物理機制模型 44
第六章 氮化硼薄膜成形機制之研究 46
6-1 運用Forming限流觀察元件成形之成因 46
6-1-1 實驗動機 46
6-1-2 Pt/BNOx/TiN元件與Pt/Hf:SO2/TiN元件電性之比較 48
6-1-3 碰撞理論 49
6-1-4 物理模型建立 52
6-2 氮化硼RRAM控制操作方向之特殊性及常用元件之比較 53
6-3 +Forming與-Forming電流之不對稱性 55
6-3-1 Pt/BNOx/TiN元件與Pt/Hf:SiO2/TiN元件讀取電流對Forming限流電性之比較 56
6-3-2 不對稱現象之解釋 57
6-3-3 物理機制模型之建立 59
第七章 氮化硼摻雜二氧化矽多層結構電阻式記憶體 61
7-1 實驗動機 61
7-2 元件製備 63
7-2-1 BN:SiO2薄膜製備 63
7-2-2 HfO2薄膜製備 64
7-3 材料分析 65
7-3-1 FTIR化學定性分析 65
7-3-2 XPS化學定量分析 66
7-4 基本電性量測結果 69
7-5 可靠度測試 72
7-6 物理機制之模型 79
第八章 結論 81
參考文獻 83

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