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博碩士論文 etd-0629103-011013 詳細資訊
Title page for etd-0629103-011013
論文名稱
Title
以X-射線光電子能譜探測氮化物半導體微觀研究
Probing the Microstructure of Nitride-Based Semiconductors by X-ray Photoelectron Spectroscopy
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
74
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2003-06-23
繳交日期
Date of Submission
2003-06-29
關鍵字
Keywords
X-射線光電子能譜、氮化物半導體
X-ray Photoelectron Spectroscopy, Nitride-Based Semiconductors
統計
Statistics
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中文摘要
近年來含氮的三五族半導體材料逐漸地受到重視與研究,如:氮砷化鎵、氮砷化銦鎵等,不只是因其特殊的材料特性,還有在元件應用上的優勢。本研究旨在對一系列氮化物半導體進行材料及電子結構的研究,實驗上以新竹同步輻射中心光源之X-射線光電子能譜量測分析在不同的成長及後級高溫回火條件下之樣品結構。
經由光電子能譜偵測氮砷化銦鎵,在與一系列氮化物半導體,如:氮砷化鎵、氮砷化銦、氮化銦、氮化鎵及砷化銦鎵、砷化鎵進行比較後,得到實驗結果與分析,成功地證實低含氮的三五族化合物半導體中確實含有氮原子的存在。對InGaAsN以Ar+轟擊清除表面氧化層後,N有兩種鍵結的形式,分別為N-In、N-Ga鍵結,而利用譜峰面積計算兩種N鍵結的莫耳分率,在InGaAsN中N-In / In-Ga鍵結量的比值大於3,可知N的鍵結是以N-In鍵結形式為主,再利用同樣的方法計算樣品中氮含量,由XPS實驗計算得的N莫耳分率均小於MBE磊晶參數值。在比較回火前後的InGaAsN,可得經熱退火處理會增加樣品氮的莫耳分率,且可觀察到N-In和N-Ga鍵結均有增加,而N-In / N-Ga鍵結量的比值仍大於2,因此經熱退火後,氮的鍵結形式維持以N-In為主。

Abstract
Incorporation of nitrogen into Ⅲ-Ⅴ materials such as GaAsN and InGaAsN, have recently drawn much attention, due to the unique properties as well as potential device applications of such materials. The purpose of this thesis is to probe microscopic compositions and electronic structures in a series of N-based semiconductor compounds. For the material and electronic structure characterizations, X-ray photoelectron spectroscopy (XPS) with synchrotron radiation beam was adopted to analyze the sample quality under different growth and post-growth thermal annealing.
Through detection of samples of InGaAsN in comparison with a series of samples of GaAsN, InAsN, InN, GaN, InGaAs and GaAs, the experimental result and analysis. Now X-ray photoelectron spectroscopy investigation on Ⅲ-Ⅴalloys containing a few percentage of nitrogen demonstrated the success of nitrogen incorporation. X-ray photoelectron spectroscopy investigation on InGaAsN films and curve fitting analysis, it can provide evidence of the existence of two principle N configurations, indicating the formation of N-In, N-Ga bonds. Through an estimation of the sample surface composition was made on the basis of the peak area: N-In/N-Ga larger than 3, it can provid direct evidence of the presence of preferential bonding of N to In. The incorporation of atomic nitrogen was added during the annealing. Right through X-ray photoelectron spectroscopy in annealed InGaAsN film can N-In and N-Ga bonds be observed to be increase, but N-In/N-Ga larger than 2, The bonds of atomic nitrogen is still N-Ga bonds.

目次 Table of Contents
第一章 緒論 1
1-1 前言 1
1-2 研究目的 4
1-3 論文架構 5
第二章 氮化物半導體 6
2-1 氮化鎵 6
2-2 氮砷化鎵 7
2-3 氮砷化銦鎵 7
2-3-1 高溫回火 7
2-4 氮砷化銦 8
2-5 氮化銦 8
第三章 實驗原理與方法 10
3-1 X射線光電子能譜 11
3-2 同步輻射 13
3-2-1 原理 14
3-2-2 插件磁鐵 14
3-3 實驗儀器 15
3-3-1 真空系統 15
3-3-2 分析組件 16
3-4 實驗步驟 18
第四章 實驗結果與討論 19
4-1 氮砷化鎵 20
4-2 氮砷化銦鎵 25
4-2-1 氮砷化銦鎵/磷化銦 25
4-2-2 熱退火處理 32
4-2-3 氮砷化銦鎵/砷化鎵 40
4-2-4 氮砷化銦鎵之比較 47
4-3 氮砷化銦 51
4-4 氮化銦 55
4-5 氮化物半導體之比較 60
第五章 氧化鎵-氮化鎵介面 64
5-1 前言 64
5-2 實驗結果與討論 65
第六章 結論 71
參考文獻 73
參考文獻 References
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[14] 廖意瑛,“以X-射線螢光術微探高介電層-半導體介面之研究”,國立台灣大學光電工程研究所碩士論文碩士論文,2001.
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