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博碩士論文 etd-0629104-152644 詳細資訊
Title page for etd-0629104-152644
論文名稱
Title
AlGaN/GaN異質結構的變溫變磁場霍爾效應研究
The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
82
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2004-06-25
繳交日期
Date of Submission
2004-06-29
關鍵字
Keywords
SdH、QMSA、霍爾效應、AlGaN
SdH, QMSA, Hall measurement, AlGaN
統計
Statistics
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The thesis/dissertation has been browsed 5773 times, has been downloaded 6504 times.
中文摘要
高效率的元件是目前無線通訊中很重要的一個應用,也是固態物理領域中很重要的研究。HEMT(高電子遷移率電晶體)為可獲得高電子遷移率的二維電子氣結構,在這裡我們拿來做為研究的對象。氮化鋁鎵在高頻的電子元件中是一個很有吸引力的材料,而且此系統對於研究量子霍爾效應也是不錯的對象。
在此我們以AlGaN/GaN異質結構為研究對象,更改鋁的含量,並對其做Shubnikov-de Haas的量測及定磁場(0.3T)變溫(從4.2K至300K)和定溫(0.3T)變磁場(0.02T至0.8T)的實驗,我們可從中算出各別的電子遷移率和載子濃度。在定溫變磁場的實驗中我們可使用QMSA的軟體獲得不同層的電子遷移率,而在變溫霍爾實驗中則可利用所得到的數據求出深階缺陷的束縛能Ed,即在熱平衡時的深階缺陷離子化的能量常數的測量,如此一來對以後探討電子深階能量有很大的幫助。
Abstract
High efficiency components are key elements of solid-state amplifiers for wireless application. We used HEMT (high-electron-mobility transistor) to obtain high mobility 2DEGs. AlGaN makes itself an attractive material for high frequency devices, and the system is particularly good for the investigation of quantum Hall effect. We studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikov-de Haas (SdH) measurement. The T-dependent Hall measurement (from 4.2 K to 300K) was performed at the magnetic field 0.3T and the B-dependent Hall measurement (from 0.02T to 0.8 T) at constant temperature. From the field-dependent Hall measurements, we are able to calculate the individual mobility and carrier concentration for the two-subband-populated AlxGa1-xN/GaN heterostructures. Then, we can use T-dependent Hall effect measurement to calculate the binding energy of the deep-level trap Ed,which is a measure of the energy constant for the ionization of deep-level trap in thermal equilibrium.
目次 Table of Contents
第一章
簡介
1-1 前言..............................................3
1-2 實驗條件..........................................4
1-3 氮化鋁鎵/氮化鎵 異質結構........................ 5
1-4 二維電子氣的電子特性..............................6
1-5 歐姆接觸(OHMIC CONTACT)..............................8 第二章 理論背景
2-1 SHUBNIKOV-DE HAAS 效應...............................9 2-2 正持續光導效應與負持續光導效應...................11
2-3 藍道能階與藍道能階的自旋裂距.....................13
2-4 霍爾效應.........................................14
2-5 量子霍爾效應.....................................18
第三章 霍爾實驗
《一》 常溫霍爾實驗............................22
(1)主要儀器.........................................22
(2)實驗步驟及量測方法...............................22
(3)數據計算.........................................24 《二》 低溫霍爾實驗...........................25
(1)主要儀器.........................................25
(2)實驗步驟與儀器操作...............................27
第四章 SHUBNIKOV-DE HAAS 實驗
一.主要儀器....................................42
(1) 週邊硬體部分....................................42
(2) 主要實驗儀器....................................46
(3) Helium 3 Insert.................................47
(4) 回收管路配置....................................48
二.實驗步驟及儀器操作..........................51
(1) 事前準備工作....................................51
(2) 預冷............................................53
(3) 傳輸液氦........................................54
(4) 降溫............................................56
(5) SdH量測.........................................57
(6) QHE (Quantum Hall Effect)量測 ...............58
(7) Rxx及RH量測.....................................58
第五章 實驗結果分析
5-1 實驗樣品.........................................60
5-2 實驗結果個別討論:................................62
(1)SdH及變溫定磁場霍爾實驗:..........................62
(2)定溫變磁場霍爾實驗及QMSA(Quantitative Mobility Spectrum Analysis)分析........................................65
綜合討論:...........................................69 REFERENCE............................................81
參考文獻 References
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3) 施敏 “半導體元件物理與製作技術”P.18 - P.19
4)F.F.Fang, T.P.Smith III and S.L.Wright, Surf.Sci.,196,310(1988)
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7)姚文醮 “Transport Studies of Two-Dimensional Electron Gas in AlGaN/GaN Quantum Well at Low Temperature and High Magnetic Field,中山大學物理系碩士論文
8) L. J. van der Pauw, "A Method of Measuring Specific Resistivity and Hall Effect of Discs of Arbitrary Shapes," Philips Res. Repts. 13, 1-9 (1958).
9)莊耿林 “Investigation of GaN semiconductor using Hall measurement”, 中山大學物理系碩士論文
10) D.R. Leadley, R.J. Nicholas, D.K. Maude, A.H. Utjuzh, J.C. Portal, J.J. Harris and C.T. Foxon. Critical Collapse of the Exchange Enhanced Spin Splitting in 2-D Systems; Physical Review B, 58, 13036 (1998).
11)K.von Klitzing et al.,Phys.Rev.Lett.45,949)
12)郭桂冠 “Magneto-transport studies of δ-doped III-V semiconductor quantum wells, 中山大學物理系碩士論文
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14)Meyer,C.A.Hoffman,J.Antoszewski and L.Faraone,J. Appl. Phys.81,709
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