在現今高數據傳輸量的需求下光通訊提供了一個解決之道，低密度波長多工系統讓我們能在短距離得到很高的傳輸量且不需要昂貴的架設，目前光通訊元件的材料以三五族材料為主因為其為直接能隙材料能有效地放光及吸收光，並且三五族材料是唯一能整合主動元件在同一片晶圓上的材料，例如我們能整合光電調變器和半導體光放大器但是三五族的缺點就是有比較大的傳輸損耗及不能跟先進矽製程做整合，但是矽是間接能矽材料無法當作光電元件所以我們利用晶圓貼合來結合這兩種材料，我們利用稀釋的DVSBCB溶液當作我們的膠材來結合我們的材料其介面的厚度為40奈米，為了達到低密度波長多工系統的要求我們利用了量子井熱混和的製程技術來創造不同的吸收波長我們在650度充滿氮氣的環境對晶圓做熱退火的處理我們成功的移動了吸收波長達120奈米並且晶圓的表面還是保持得非常光滑的情況，為了能把光從矽波導耦合到三五族波導我們利用共振耦合來設計了一個耦合器，利用波導的寬度來達到折射率的匹配藉此來做光的轉換，在三五族波導寬度為0.3微米矽波導寬度為0.7微米的條件下，此元件只需要35微米的耦合長度就可以達到95%的耦合率並且對波常非常不敏感，再來為了達到我們設計耦合器的寬度我們利用底切的製程技術來達到0.3微米和0.7微米的波導寬度，為了要保持這微細的結構我們利用乾蝕刻技術來蝕刻我們的波導，在高真空高溫的環境下利用氬氣甲烷及氯氣的混合氣來達到垂直及平滑的光波導，再來利用氫氧化鉀的蝕刻液我們也做出了垂直及平滑的矽光波導

Silicon photonics is a promising technique for improving optical transmission capability in optical interconnect and fiber transmission due to its mutual processing. However, the indirect bandgap render Si material with inefficient and absorption properties, leading to low flexibility and less functionality in designing receivers in photonic integration. Lately because of the constantly growing requirement of data rate, coarse wavelength division multiplexer (CWDM) technique offers a good solution for increasing data capacity, inducing the need of wavelength-selective device and the integration. In this work, a novel CWDM-based photodetectors integrated with silicon-on-insulator (SOI) waveguide template and hybrid tapered waveguide coupler is proposed. Using multi-quantum well (MQW) intermixing in III-V material bonded with SOI substrate, CWDM functionality of III-V waveguide can be integrated with the passive element in SOI template.
With InGaAsP MQW intermixing to extract 3 sectional of different bandgap tailoring, the material is successfully bonded to SOI material. By utilizing impurity free vacancy disordering methods, absorption wavelength of 3 sections are shifted by 1540nm, 1500nm, 1450nm and 1400nm. A low temperature bonding processing with 40 nm ultra-thin bonding interface was achieved and bonding area is 1cm x 1cm. By applying resonant coupling, only 35 um coupling length in directional coupler is designed, attaining 95% coupling coefficient. 0.3um wide tip tapered waveguide is also is obtained by undercut Cr etching technique and an etching depth 2.7nm smooth and vertical profile is obtained. In silicon waveguide 0.7um width smooth and vertical waveguide was also obtained.

ACKNOWLEDGEMENT iii
摘要 iv
ABSTRACT vi
INTRODUCTION 1
1.1 PREFACE 1
1.2 MOTIVATION 3
1.3 STATE-OF-ART IN INTEGRATION WITH III-V MATERIAL AND SILICON MATERIAL AND DEVICE FOR CWDM SYSTEM 5
1.4 BAND GAP ENGINEERING 13
1.5 THESIS OUTLINE 15
1.6 REFERENCE 16
CHAPTER 2 20
MULTI-QUANTUM WELL SIMULATION 20
2.1 OPTOELECTRONIC SEMICONDUCTOR 20
2.2 MATERIAL BANDGAP 21
2.3 OPTICAL ABSORPTION IN QUANTUM WELL 26
2.4 ABSORPTION COEFFICIENTS WITH EXCITON EFFECT 36
2.5 MATERIAL REFRACTIVE INDEX 42
2.6 REFERENCE 45
CHAPTER 3 47
RESONANT COUPLING COUPLER DESIGN 47
3.1. BASIC MECHANISM 47
3.2. COUPLE MODE THEORY 49
3.3. DEVICE DESIGN 52
3.4. REFERENCE 64
CHAPTER 4 65
FABRICATION AND MEASUREMENTS 65
4.1 LAYER STRUCTURE 65
4.2 QUANTUM WELL INTERMIXING 66
4.3 WAFER BONDING 68
4.4 WAVEGUIDE ETCHING 73
4.5 DEVICE FABRICATION 83
4.6 REFERENCE 87
CHAPTER 5 88
SUMMARY AND FUTURE WORK 88
5.1 SUMMARY 88
5.2 FUTURE WORK 89

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