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博碩士論文 etd-0629115-220353 詳細資訊
Title page for etd-0629115-220353
論文名稱
Title
在鉑/ 鎳鐵合金結構中鉑的厚度及熱退火效應對自旋塞貝克電壓的影響
The effect of Platinum thickness and annealing on spin–Seebeck voltage in Pt/Ni79Fe21 structure
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
61
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2015-07-29
繳交日期
Date of Submission
2015-07-29
關鍵字
Keywords
退火、異常能斯特效應、白金、鎳鐵合金、自旋電流、自旋塞貝克效應、反向自旋霍爾效應
Platinum, Permalloy, annealing, spin current, Anomalous Nernst effect, spin Seebeck effect, Inverse spin Hall effect
統計
Statistics
本論文已被瀏覽 5692 次,被下載 258
The thesis/dissertation has been browsed 5692 times, has been downloaded 258 times.
中文摘要
本實驗是將鎳鐵/白金沉積於藍寶石基板後,討論白金厚度及熱退火對縱向自旋塞貝克電壓的影響。
在不同白金厚度實驗可看到訊號大小會隨著白金薄膜厚度的縮減而增大,但當白金薄膜厚度為5 nm時,因為膜厚小於自旋擴散長度,導致反向自旋霍爾效率變差,所以訊號反而變小。
若將樣品進行退火,發現當退火溫度達373 K時,訊號大小有明顯變小,且將退火溫度提高訊號卻幾乎沒有變化,這是因為退火後鎳鐵層與白金層顆粒融合,導致介面變得模糊,因此退火後不會有自旋電流注入白金所產生的反向自旋霍爾效應,所以量測到的只是單純的異常能斯特效應。
Abstract
Platinum thickness dependence and annealing effect of the longitudinal spin-Seebeck voltage has been investigated in platinum/ Ni79Fe21 films, which has grown on sapphire substrate.
In the experiment of thin film with different thickness, we found that the signal is negatively correlated with the Pt thickness before the thickness decreased into 9 nm.
Interestingly, we found the decreasing of the signal in the 5 nm thin film, which maybe caused by the weakening efficiency of inverse spin Hall effect that is correlated with the fact that the spin diffusion length is shorter than thicknesses of Pt.
On experiment of annealing, the signal is obviously decreased at 373 K, and the signal is nearly changeless with higher annealing temperature. After annealing, the indistinct interface appears due to the reaction between Permalloy and Platinum. The results indicate that there is no spin current into the Pt layer, and that only the anomalous Nernst effect in Permalloy remains.
目次 Table of Contents
研究生學位論文審定書 i
摘要 ii
Abstract iii
目錄 iv
圖次 vii
第一章 簡介 1
1-1前言 1
1-2動機 2
第二章 基本理論 3
2-1 霍爾效應(Hall effect) 3
2-1-1霍爾效應 (Ordinary Hall effect, OHE) 3
2-1-2自旋霍爾效應(Spin Hall effect, SHE) 4
2-1-3反向自旋霍爾效應(Inverse spin Hall effect, ISHE) 5
2-1-4異常霍爾效應(Anomalous Hall effect, AHE) 6
2-1-5平面霍爾效應(Planar Hall effect, PHE) 6
2-2 熱電效應 7
2-2-1賽貝克效應(Seebeck effect) 7
2-2-2佩爾蒂埃效應 (Peltier Effect) 8
2-2-3湯姆森效應 (Thomson Effect) 8
2-3自旋熱電子學(Spin Caloritronics) 9
2-3-1自旋塞貝克效應(Spin Seebeck effect, SSE) 9
2-3-2能斯特效應(Nernst effect) 12
2-3-3異常能斯特效應(Anomalous Nernst effect, ANE) 12
2-3-4平面能斯特效應(Planar Nernst effect, PNE) 13
第三章 儀器介紹與實驗流程 14
3-1電子束蒸鍍機 14
3-2雙晶薄膜X光繞射儀 Bede D1(Bede D1 HR-XRD) 18
3-3三維輪廓儀 3D Alpha-Step Profilometer 19
3-4高溫爐 20
3-5電磁鐵 21
3-6加熱器 22
第四章 實驗結果與討論 23
4-1實驗架構 23
4-2 XRD分析 24
4-3實驗量測方式 25
4-4改變基板種類的影響 26
4-4-1玻璃基板所量測到的訊號 26
4-4-2藍寶石基板量測到的訊號 28
4-5溫差效應 29
4-5-1溫差的大小與訊號關係 29
4-5-2反向溫差大小與訊號關係 30
4-6單層Ni79Fe21薄膜厚度與異常能斯特電壓的關係 31
4-6-1不同Ni79Fe21厚度於不同溫差下變磁場的電壓趨勢 31
4-6-2電壓訊號大小與Ni79Fe21厚度關係 35
4-7 Pt厚度對訊號大小的影響 36
4-7-1 Pt厚度於不同溫差下變磁場的電壓趨勢 36
4-7-2 Pt厚度對電壓的影響 39
4-8退火與訊號的變化關係 41
4-8-1退火後不同溫差的電壓趨勢 41
4-8-2退火前後的訊號比較 45
第五章 結論 47
參考文獻 49
參考文獻 References
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