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博碩士論文 etd-0629115-222434 詳細資訊
Title page for etd-0629115-222434
論文名稱
Title
熱退火效應對銦錫氧化物電子性質的影響
The effect of thermal annealing on electrical properties of ITO
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
45
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2015-07-29
繳交日期
Date of Submission
2015-07-29
關鍵字
Keywords
載子濃度、熱電能、XPS、電阻率、Bloch-Grüneisen方程式、退火、ITO
thermopower, XPS, carrier concentration, Bloch-Grüneisen function, resistance, indium tin oxide, anneal
統計
Statistics
本論文已被瀏覽 5674 次,被下載 29
The thesis/dissertation has been browsed 5674 times, has been downloaded 29 times.
中文摘要
本實驗研究銦錫氧化物(ITO)於退火後不同溫度對電阻率的關係,以及利用賽貝克效應得知樣品的載子濃度。將銦錫氧化物分兩組置入高溫爐以不同溫度退火,一組通氮氣一組通氦氣之後,進行了兩個實驗。
隨著退火溫度增加,可以發現熱電能(thermopower)的傾斜幅度越來越大,進而得知載子濃度的遞減。認為在製備ITO時,使得內部存有一些氧氣,並在退火時補足了氧空缺的位置,使得氧空缺減少。為了驗證結果,將樣品進行XPS分析,經過定量分析之後,發現表面確實存有一些氧化合物,而氧空缺也確實減少。
將ITO量測電阻率與溫度的關係,對電阻率公式進行擬合後,可以發現約以0.1德拜溫度為分界線,高溫和低溫區各以不同的散射為電阻率的主要貢獻。
而Bloch-Grüneisen 方程式求出的參數ρ0和β作圖發現為線性,本以為β是受電性的影響,但線性說明了和晶格紊亂程度(disorder)程度是有關連的。
Abstract
This thesis studies the temperature dependence of resistance and uses the Seebeck effect to obtain the carrier concentration in the indium tin oxide (ITO) films which have been annealed. We annealed two sets of indium tin oxide in different temperatures—one through helium gas and the other through oxygen gas.
Since the higher the temperature, the greater the thermopower, we could observe the change of the carrier concentration. It is believed that the fabrication of ITO films would cause some oxygen to stay inside, and the oxygen will repair the oxygen vacancy. Having analyzed experience samples with XPS, we found that there was some oxygen contaminant on the surface of the samples, and the amount of oxygen vacancies also decreased. It complied with our result.
We measured the temperature dependence of resistance of samples. Then, we fitted our data with resistivity function. There was about 0.1 debye temperature in fitting parameter, and it distinguished the contribution to the different scattering mechanism in different temperature.
By fitting the data to Bloch-Grüneisen theorem, we found that there was a linear association parameter ρ0 and β We had thought that the variation of β was affected by electric properties, but the result suggested that it had more to do with the degree of disorder.
目次 Table of Contents
論文審定書 i
摘要 ii
Abstract iii
目錄 iv
圖次 vi
第一章 簡介 1
1-1 前言 1
1-2 動機 2
第二章 基本理論 3
2-1 ITO介紹 3
2-1-1 結構與電學特性 3
2-2 熱電效應 4
2-2-1 賽貝克效應和帕爾帖效應 4
2-2-2 湯姆森效應. 5
2-2-3 Mott formula. 6
2-3 溫度與電阻率 9
2-3-1 Matthiessen’s rule 9
2-3-2 Bloch-Gru ̈neisen方程式和雜質聲子電子散射電阻率. 10
2-4 德拜溫度與德拜模型概述 11
第三章 儀器介紹 13
3-1 高溫爐 13
3-2 冷卻機(Refrigerator) 14
3-2-1 氦-4冷卻機(Helium-4 Cryostat) 15
3-2-2 物理性質量測系統 18
3-3 X射線光電子分光儀(XPS) 20
3-4 加熱器 21

第四章 實驗結果與討論 22
4-1 實驗架構 22
4-2 改變退火溫度後與電阻率的關係 23
4-2-1 不同退火溫度ITO的電阻率 23
4-2-2 ρ_int (T) 和 ρ_BG (T) 貢獻 24
4-2-3 β_BG和ρ_0的關係 25
4-3 ITO進行退火後載子濃度與內部結構變化的關係 26
4-3-1 ITO進行退火效應後進行賽貝克效應量測 26
4-3-2 Mott formula和載子濃度的關係 27
4-4 XPS的定量分析 28
4-4-1 XPS的化學位移 28
4-4-2 定量分析方法與各元素之定量分析 29
4-4-3 定量分析總整理 33
第五章 結論 34
參考文獻 36
參考文獻 References
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