本研究利用共價鍵將基材與偶氮苯結合，藉由雷射的同調性使偶氮苯有可逆的順–反式結構變化，以製備出具有重複寫入能力之全像儲存材料。基材選用枝狀高分子聚乙烯亞胺(Polyethylenimine Branched, PEI)以及分子量較小的乙二胺枝狀物(PAMAM dendrimer)，而偶氮苯以2-{[4-(二甲氨基)苯基]偶氮基}苯甲酸(2-{[4-(dimethylamino)phenyl]diazenyl}benzoic acid, Methyl Red)做為光致變色單體。
首先以Methyl Red與PEI製備成全像儲存材料LR，其中改變Methyl Red單體含量製成一系列樣品，藉由這樣的變化，觀察Methyl Red在不同含量下，所造成之繞射效率以及表面起伏光柵之差異。再來，基材改用小分子量的PAMAM製成材料SR，以觀察基材分子量所造成的影響。最後，將所使用的甲基紅改成甲基紅鈉鹽，透過混摻的形式與PEI混合成LR(hybrid)，藉此比較單體有無鍵結上基材，對於繞射效率是否有影響。
目前可確認材料LR、材料SR以及LR混摻材料之最大繞射效率，分別為29%、20%、23%。

The holographic storage materials were formed by the cis-trans photoisomerization of azobenzene combined with substrate. In this study, we selected two different materials as the substrate. They were Polyethylenimine Branched (PEI, L) and PAMAM dendrimer, ethylenediamine core (PAMAM, S). And the precursor of azobenzene was 2-{[4-(dimethylamino)phenyl]diazenyl} benzoic acid (Methyl Red, MR). The substrate and precursor were covalent bonded which could reduce the situation of the phase separation and increase the thermal stability and long term preservation. We also change the azobenzene concentration to discern the influence of different MR concentration on same substrate.
The diffraction efficiency of the composites LR, SR, LR (hybrid) was 29%, 20%, 23%. From the data measurement by Atom Force microscopy (AFM), it revealed the surface relief gratings depth of LR and SR were 1087, 1426 nm. On the other hand, the amplitude of the surface relief of LR (hybrid) is much smaller.

論文審定書 i
誌謝 ii
摘要 iii
Abstract iv
目錄 v
圖目錄 viii
表目錄 xi
第一章 緒論 1
1.1前言 1
1.2研究動機與目的 2
第二章 原理與文獻回顧 4
2.1全像術 4
2.2全像儲存材料種類 5
2.3偶氮苯聚合物文獻回顧 7
2.4偶氮苯化合物的光學性質 10
2.4.1光致變色系統 10
2.4.2光致變系統機制 11
2.4.3順反異構型態 12
2.4.4表面光柵起伏(Surface Relief Gratings) 13
2.4.5振幅光柵與相位光柵 15
2.4.6相位光柵之差異 16
2.5繞射效率計算方式 17
3.1實驗藥品及材料 18
3.2實驗流程 19
3.2.1 材料LR製程 19
3.2.2 材料SR製程 20
3.2.3 混摻材料LR製程 22
3.3實驗儀器及分析方法 24
3.3.1傅立葉轉換紅外光光譜儀（Fourier Transform Infrared Spectrometer, FTIR） 24
3.3.2核磁共振光譜儀(Nuclear Magnetic Resonance Spectroscopy, NMR) 24
3.3.3光功率計(Power Meter) 25
3.3.4旋轉塗佈機(Spin Coater) 25
3.3.5光學顯微鏡(Optical Microscope, OM) 25
3.3.6原子力顯微鏡(Atomic Force Microscopy, AFM) 25
3.3.7 N&K薄膜特性分析儀 26
3.4全像干涉紀錄與讀取 26
3.4.1實驗設備 26
3.4.2紀錄與讀取 26
第四章 結果與討論 28
4.1材料的合成鑑定分析 28
4.1.1傅立葉轉換紅外光譜儀檢測(FTIR) 28
4.1.2核磁共振光譜儀檢測(NMR) 35
4.2光學特性 39
4.2.1 高分子側鏈基材LR之繞射效率檢測 39
4.2.2 樹枝狀小分子基材SR之繞射效率檢測 48
4.2.3 混摻型LR1h材料之繞射效率檢測 50
4.2.4原子力顯微鏡檢測(AFM) 52
4.2.5薄膜特性分析儀檢測(N&K) 62
4.2.6材料光學穩定性分析 63
4.2.7光學性質綜合討論 66
4.3實驗室團隊歷年研究綜合比較 68
第五章 結論 70
參考文獻 71
附錄 76

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