藉由N2O 及 SiH4 的化學反應，以電漿助長化學氣相沉積(Plasma enhanced chemical vapor deposition)成長之silicon oxynitride (SiON) 厚膜可應用於平面光波導元件的製作。我們使用此法，將SiON沉積於4吋矽晶圓上。藉著改變N2O/ SiH4 流量比，我們可以成長出不同折射率之SiON。為了比較總流量的影響，我們又分別以高流量(~1500 sccm)及低流量(~1000 sccm)成長不同N2O/ SiH4流量比的SiON，並量測其材料特性參數。
我們發現總流量小的條件能得到較低氮含量的SiON，而減小1500nm波長的吸收。因此選擇以低流量條件成長之SiON製作元件。
最後，經由模擬設計，並實際製作一個單模波導，我們量得元件於1300nm波長的TE極化傳輸損耗為0.79dB/cm，TM極化傳輸損耗為0.73dB/cm。

Silicon oxynitride (SiON) films for applications of optical waveguide devices deposited using plasma-enhanced chemical vapor deposition were investigated. The SiON films were deposited on 4” silicon wafers based on the reaction of N2O/SiH4 precursors. The refractive indices of the films were adjusted by varying the partial pressure of SiH4 in the precursors. In addition, films prepared at conventional flow (~1500 sccm) and low flow (~1000 sccm) conditions were compared.

We found that the nitrogen content of the films grown at low flow conditions can be significantly reduced resulting in a reduction of absorption around 1500 nm. Therefore SiON films grown at low flow conditions would be more suitable for optical waveguide fabrication.

Finally, with the aid of the beam propagation method (BPM) software, a single-mode optical waveguide based on the proposed technology was designed and fabricated. The propagation loss was 0.79dB/cm for TE polarization, and 0.73db/cm for T

第一章 導論
第二章 材料成長及特性分析
2-1材料成長
2-2材料特性分析
2-2-1折射率
2-2-2應力 12
2-2-3表面粗糙度
2-2-4元素組成分析
2-3結論
第三章 元件模擬與設計
3-1元件結構
3-2模擬計算結果
第四章 元件製作流程
4-1熱氧法成長二氧化矽
4-2成長下披覆層與導光層
4-3鉻蒸鍍與光微影定義脊狀波導之形狀
4-4乾蝕刻脊狀導光層
4-5成長上披覆層
4-6切割與拋光
第五章 元件特性量測
5-1量測系統
5-2量測結果分析與討論
第六章 結論

1. M. Hoffmann, P. Kopka and E. Voges, “Low-loss fiber-matched low-temperature PECVD waveguides with small-core dimensions for optical communication systems”, IEEE Photon. Technol. Lett., vol. 9, pp. 1238-1240, 1997.
2. T. Miya, “Silica-based planar lightwave circuits: passive and thermally active devices”, IEEE J. selected Topics in Quantum Electronics, vol. 6, pp.38-45, 2000.
3. J. L. Jakel, C. E. Rice and J. J. Veselka, ”Proton exchange for high-index waveguides in LiNbO3,” Appl. Phys. Lett., vol. 41, pp. 607-608, 1982.
4. R. C. Alferness, L. L. Buhl, U. Koren, B. I. Miller, M. Young and T. L. Koch, ”Vertically coupled InGaAsP/InP buried rib waveguide filter”, Appl. Phys. Lett., vol. 59, pp. 2573-2578, 1991.
5. Q. Lai, W. Hunziker and H. Melchior, “Low-power compact 2´2 thermooptic Silica-on-silicon waveguide switch with fast response”, IEEE Photon. Technol. Lett., vol. 10, pp. 681-683, 1998.
6. B. J. Offrein, F. Horst, G. L. Bona, R. Germann, H. W. M. Salemink and R. Beyeler, “Adaptive gain equalizer in high-index-contrast SiON technology”, IEEE Photon. Technol. Lett., vol. 12, pp. 504-506, 2000.
7. B. J. Offrein, F. Horst, G. L. Bona, H. W. M. Salemink, R. Germann and R. Beyeler, “Wavelength tunable 1-from-16 and flat passband 1-from-8 add-drop filters”, IEEE Photon. Technol. Lett., vol. 11, pp. 1440-1442, 1999.
8. A. C. Adams, F. B. Alexander, C. D. Capio, and T. E. Smith, “Characterization of plasma-deposited silicon oxide”, J. Electrochem. Soc., vol. 128, pp. 1545-1551, 1981.
9. H. J. Schliwinski, U. Schnakenberg, W. Windbracke, H. Neff, and P. Lange, “Thermal annealing effects on the mechanical properties of plasma-enhanced chemical vapor deposited silicon oxide films”, J. Electrochem. Soc., vol. 139, pp. 1730-1735, 1992.
10. O. Sneh and S.M. George, “Thermal stability of hydroxyl groups on a well-defined silica surface”, J. Phys. Chem., vol. 99, pp. 4639-4647, 1995.
11. D. Della Sala and G. Fortunato, “Structural analysis by infrared and X-Ray photoelectron spectroscopy of amorphous silicon produced by plasma-deposition”, J. Electrochem. Soc., Vol. 137, pp. 2550-2556, 1990.
12. A. Borghesi, A. Sassella, B. Pivac and L. Zanotti,“Si-H bonding configuration in SiOx:N,H films deposited by chemical vapor deposition”, Solid State Commun, Vol. 100, pp.657-661, 1996.
13. Carlos Dominguez, Jose A. Rodriguez, Francisco J. Munoz and Nadia Zine,“The effect of rapid thermal annealing on properties of plasma enhanced CVD silicon oxide films”, Thin Solid Films, Vol. 346, pp. 202-206, 1999.
14. M.I. Alayo, I. Pereyra, W.L. Scopel and M.C.A Fantini,“On the nitrogen and oxygen incorporation in plasmsa chemical vapor deposition (PECVD) SiOxNy films”,Thin Solid Films , Vol. 402, pp. 154-161, 2002.