本論文前半部主要是藉由宏捷科技公司所提供的砷化鎵異質接面雙極電晶體，藉由完整的實驗程序並配合其半導體物理特性與工作原理，完成Gummel Poon靜態模型的建立與增益頻寬頻率 、最大振盪頻率 之射頻參數量測，驗證異質接面雙極電晶體優異的特性，進而明瞭模型之準確度，以利於電路設計。而論文後半部則是以美國GCS公司之砷化鎵異質接面雙極電晶體製程，利用奎普斯方法以及Agilent Eesof ADS模擬軟體，進行頻率範圍在1800MHz至2000MHz，以單電源3.4伏特操作，線性增益與輸出功率分別大於30dB與27dBm，諧波抑制35dBc以上，功率增加效率大於30﹪，輸入VSWR小於1.5之PCS頻段發射端鏈路上單晶微波積體電路功率放大器設計。

Using GaAs HBT provided by AWSC to construct Gummel
Poon static model.then using the GaAs HBT processing
of GCS to design MMIC power amplifier for the 1.9~2.0
GHz PCS system. This power amplifier exhibits an output
power of 27dBm and a power added efficiency as high as
32% at an operation voltage of 3.4V.

目 錄
目錄 I
圖表目錄 II
第一章 緒論 1
第二章 異質接面雙極電晶體 3
2.1異質接面雙極電晶體半導體特性分析 3
2.1.1 異質接面形成機制 3
2.1.2 異質接面雙極電晶體結構 5
2.2異質接面雙極電晶體Gummel Poon 態模型
參數之萃取 6
2.2.1 順向Gummel圖 9
2.2.2 反向Gummel圖 12
2.2.3 順向與反向Early效應 14
2.2.4 射極與集極寄生電阻 16
2.2.5 最佳化Gummel Poon靜態模型之建立 17
2.3異質接面雙極電晶體射頻特性分析 23
2.3.1 基本定義 23
2.3.2 與 之量測方法 25
第三章 單晶微波積體電路功率放大器設計 27
3.1基本輸出級功率放大器之分類 27
3.2 A類功率放大器之特性 29
3.3奎普斯方法 30
3.4異質接面雙極電晶體之三級功率放大器設計 33
3.4.1 功率放大器之架構 33
3.4.2 設計流程與模擬分析 36
3.4.3 佈局考量 42
3.4.4 測試方法 42
第四章 結論 46
參考文獻 47

參考文獻
[1] H. Kroemer, "Heterostructure bipolar transistors and integrated circuits," Proc. IEEE, vol. 70, Jan. 1982.
[2] J. Cowles, A. Oki and D. Streit, "Heterojunction bipolar transistor technology for defense and commercial application," Proc. SBMO/IEEE MTT-S International vol. 1, 1997.
[3] K. C. Wang, P. M. Asbeck, M. F. Chang, R. B. Nubling, and R. L. Pierson, "Heterojunction bipolar technology for analog to digital conversion," IEEE GOMAC Dig. Papers, 1991.
[4] B.K. Oyama, B.P. Wong, "GaAs HBT's for analog circuits," Proc. IEEE, vol. 81, NO. 12, Dec. 1993.
[5] M. F. Chang, Current trends in heterojunction bipolar transistors, World Scientific, 1996.
[6] M. E. Kim, A. K. Oki, G. M. Gorman, D. K. Umemoto, and J. B. Camou, "GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave application," IEEE Trans. on Microwave Theory and Techniques, vol. 37, NO. 9, Sep. 1989.
[7] J. Corcoran, K. Poulton, and K. Knudsen, "GaAs HBTs : an analog circuit design perspective," 1991 Bipolar Circuits and Technology Meeting Proceedings.
[8] Fazal Ali and Aditya Gupta, HEMTs and HBTs : device, fabrication, and circuits, Artech House, 1991.
[9] Ke Lu, P. A. Perry, T. J. Brazil, "A new SPICE-type heterojunction bipolar transistor model for DC, microwave small-signal and large-signal circuit simulation," IEEE MTT-S Digest 1994.
[10] Ke Lu, P. A. Perry, T. J. Brazil, "A new large-signal AlGaAs/GaAs HBT model including self-heating effects, with corresponding parameter-extraction procedure," IEEE Trans. on Microwave Theory and Techniques, vol. 43, NO. 7, July. 1995.
[11] Peter Asbeck, "Heterojunction bipolar transistors : status and directions," 1989 Bipolar Circuits and Technology Meeting Proceedings.
[12] S.M. Sze, Semiconductor devices physics and technology, John Wiley & Sons, 1985.
[13] Robert Anholt, Electrical and thermal characterization of MESEFTs, HEMTs, and HBTs, Artech House, 1995.
[14] M. E. Hafizi, C. R. Crowell, and M. E. Grupen, "The DC characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling," IEEE Trans. on Electron Device. vol. 37, NO. 10. Oct. 1990.
[15] Giuseppe Massobrio, Paolo Antognetti, Semiconductor device modeling with SPICE, McGraw-Hill Inc, 1993.
[16] L. J. Giacoletto, "Measurement of emitter and collector series resistances," IEEE Trans. on Electron Devices, May. 1972.
[17] Guillermo Gonzalez, Microwave transistors amplifiers analysis and design, Prentice Hill, 1996.
[18] D. R. Pehlke and D. Pavlidis, "New analytic determination of , and the frequency dependence of current gain and power gain in HBTs," 1993 High Speed Semiconductor Devices and Circuits, Proceedings.
[19] S. Prasad, W. Lee, C. G. Fonstad, "Unilateral gain of heterojunction bipolar transistors at microwave frequencies," IEEE Trans. on Electron Devices, vol. 35, NO. 12, Dec. 1988.
[20] S. Prasad, W. Lee, C. G. Fonstad, "Reply to 'Comments on 'Unilateral gain of heterojunction bipolar transistors at microwave frequencies'," IEEE Trans. on Electron Devices, vol. 37, NO. 3, Mar. 1990.
[21] Cripps, S., "A method for the prediction of load-pull power contours in GaAs MESFETs," Proc. IEEE Intl. Microw Symp., MTT-S, 1989.
[22] L. A. Geis, L. P. Dunleavy, "Power contour plots using linear simulations," Microwave Journal, June. 1996.
[23] Steve C. Cripps, RF power amplifier for wireless communications, Artech House, 1999.
[24] John L. B. Walker, High-power GaAs FET amplifiers, Artech House, 1993.
[25] IC-CAP user's manual, High-frequency model tutorials, vol. 1, May. 1997.
[26] David M. Pozar, Microwave Engineering, Addison-Wesley Publishing Company, 1990.
[27] W. Liu, Shou-Kong Fan, Timothy Henderson, Dave Davito, "Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor," IEEE Electron Devices Letters, vol. 14, NO. 4, Apr. 1993.
[28] Adel S. Sedra, and Kenneth C. Smith, Microelectronic Circuits, Saunders College Publishing, 1991.
[29] Lawrence E. Larson, RF and microwave circuit design for wireless communications, Artech House, 1997.
[30] F. Gonzalez, J. Jimenez, and A. Lopez, "Effects of matching on RF power amplifier efficiency and output power," Microwave Journal, Apr. 1998.
[31] Toshihiko Yoshmasu, Noriyuki Tanba, and Shinji Hara, "An HBT linear power amplifier for 1.9 GHz personal communications," IEEE 1994 Microwave and Millimeter-Wave Monolithic Circuits Symposium.
[32] Toshihiko Yoshmasu, Masanori Akagi, Noriyuki Tanba, and Shinji Hara, "An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications," IEEE Journal of Solid-State Circuits, vol. 33, NO. 9, Sep. 1998.
[33] 林子欽、蔡政宏、洪子聖 國立中山大學電機工程學系, "發展功率放大器負載拉動及參數量測之HP-VEE自動化環境," HP Eesof 愛用者第七屆論文競賽。
[34] 蔣建勇、莊惠如 國立成功大學電機工程學系, "ISM頻帶無線通訊射頻功率放大器模組設計,"