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博碩士論文 etd-0701102-172940 詳細資訊
Title page for etd-0701102-172940
論文名稱
Title
電子構裝金線接點破壞機構及顯微組織分析
Wire bond failure Mechanism and microstructure analysis
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
109
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2002-06-28
繳交日期
Date of Submission
2002-07-01
關鍵字
Keywords
介金屬化合物、可靠度、金鋁微接點、顯微組織
Au wire, Kirkendall voids, Cu migration, intermetallic, reliability, Au4Al, peeling off, compound, wire bond, Pd barrier, minute voids, Au5Al2
統計
Statistics
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中文摘要
Au wire是許多傳統IC封裝製程中,用來連結chip與lead frame的橋樑。因應IC在使用過程中訊號電流的輸入輸出,造成IC的局部過熱,因此對於高溫時效過程中,Au wire與Al pad接合微接點的可靠度研究是非常重要的。不同的wire bond參數會造成高溫時效後,Au-Al微接點morphology的不同。良好的wire bond條件應該是Au wire與Al pad的有效接合面積既平整且殘留的passive region愈少。良好的wire bond條件會使Au wire與Al pad接合之微接點在高溫時效過程陸續產生數種介金屬化合物的消長。探討這些介金屬反應層的消長機制將有助於了解微接點在時效過程的破壞機制。
此次研究將著重於三種不同成份的Au wire與Al pad接合後,在高溫時效所產生的介金屬反應層成長機制做逐步分析探討,這三種wire為pure Au wire、添加微量Pd元素的Au wire及添加微量Cu元素的Au wire。
另外研究過程中,因部份參數的不同,也會造成一些不同的Au-Al微接點morphology行為,如不同的封裝樹脂,或是在Au wire中添加不同雜質含量,或是改變Al pad厚度…等等。
為了改善金鋁微接點的可靠度,了解不同合金的物理及擴散成長行為,將有助於對此次研究的探討,以提昇產品在市場上的信賴。



Abstract
The Au-Al bond is a commonly used interconection in IC package.The different composition for Au wire will change the different IMC growth.
In this study, we will discuss the pure Au wire, and little Pd or Cu addition in Au wire reacted with Al pad for thermal aging, and we will give the models for these cases.


目次 Table of Contents
摘要
壹、前言 1
1-1 研究背景 1
1-2 wire bond的接合方式 1
1-3 Au-Al ball bonds接合的重要性 2
1-4 Au-Al intermetallic的顯微組織 3
1-5 wire bonding的參數設定 5
1-6 電性量測 6
1-7 wire bonding接合強度的測試 6
1-8 添加雜質對Au-Al intermetallic的影響 7
1-9 封裝材料對wire bonding的顯微組織影響 7
1-10 研究方向 7
貳、實驗方法 9
2-1 試片分類 9
a. 不同接合參數 9
b. 不同的封裝材料 9
c. 不同的wire成份 10
d. 不同的Aluminum pad thickness 10
2-2 時效處理 10
2-3 試片製作 12
a. cross section試片製作 12
b. 翻球試片製作 13
2-4 試片分析 13
a. morphology分析及觀察 13
b. 電阻測試 13
c. 電流通過微接點正負極之影響 14
參、實驗結果 15
3-1 Wire bond參數對金鋁微接點morphology的影響 15
3-2 封裝樹脂對金鋁微接點的影響 15
3-3 Pure Au wire與wire中摻雜微量合金元素的差異 16
3-4 Au wire中增加Pd對微接點處反應層的影響 17
3-5 Al pad厚度對反應層的影響 18
3-6 電流對微接點的影響 18
3-7 微接點電阻隨時間之變化關係 18
肆、討論 20
4-1 接合參數對微接點morphology的影響 20
4-2 Pure Au wire與Al pad接合後之時效機制 21
4-3 Au wire添加微量Pd元素與Al pad接合後之時效機制25
4-4 Au wire添加微量Cu元素與Al pad接合後之時效機制31
4-5 Au wire中Pd成份增加對微接點的影響 33
4-6 Al pad厚度對微接點的影響 34
4-7 Wire ball edge的影響 34
4-8 封裝樹脂對morphology的影響 34
4-9 不同電極之時效對微接點的影響 36
4-10 電阻曲線與morphology的關係 38
伍、結論 39
陸、參考文獻 42
參考文獻 References
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