在微電子工業快速進步下，各製程與相關設備的研究成為產業發展的重要關鍵。而應用數值模擬的方法可以減少相關研究所耗費的時間與成本，並可作為製程分析與設備改善的依據。本研究便是以數值方法，描述化學氣相沉積(CVD)反應器內部流場傳輸現象的統御方程式，配合不規則網格的產生，加以運算與解析。
本研究乃針對快速熱製程(RTP)應用於多晶矽(Poly-silicon)薄膜成長的化學氣相沉積技術，以單一晶片式(single wafer)垂直快速熱製程反應爐為模擬對象，探討三維層流條件下之冷壁式(cold wall)反應器的內部流場。藉由不同操作參數的計算結果進行交叉比對，尋找出各參數間的相互關係以作為最佳操作的考量依據。考慮的操作參數，包括：(a.)淋氣頭(shower head)距晶圓距離、(b.)反應氣體入口速度、(c.)反應器腔體的操作壓力。此外，站在快速熱化學氣相沉積製程(RTCVD)的應用立場，本研究包含了三個過程的分析：(Ⅰ) 加熱過程的暫態效應、(Ⅱ) 穩態沉積過程的操作考量、(Ⅲ) 溫降過程暫態效應的影響。
本研究的數值模擬結果顯示：各操作參數對晶圓表面的速度、溫度、沉積率等的分佈情形與均勻性問題，不論是在暫態或穩態過程中均有不同層面與程度的影響；「操作壓力」對製程暫態的效果時間和化學反應率的影響最大、增加「晶圓距離」可以減少氣流影響與浮力效應、而快速熱化學氣相沉積製程採用輻射熱傳作為的溫度控制方式，可以在加熱與冷卻的暫態過程中減少某些特定操作參數的影響。

The development and advancement of microelectronics technology have been dramatically. The time and cost, for research and optimization of process and equipment, can be saved by using flow simulation. The governing equations of flow field, inside chemical vapor deposition (CVD) reactor, are constructed, dispersed, and solved by grid mesh and numerical method.
At present, rapid thermal process (RTP) is becoming more important and popular for thin-film depositing technology. In this thesis, vertical type single wafer RTCVD reactor in poly-silicon thin-film depositing process is analyzed by numerical method. Several operating process parameters, such as: (a) the gap between shower head and wafer surface, (b) gas inlet velocity in shower head, and (c) operating pressure inside chamber of reactor, are considered for discussion and analysis of steady or unsteady phenomenon in three steps of thin-film depositing process, including (Ⅰ) heating for wafer, (Ⅱ) deposition in steady state, (Ⅲ) cooling after deposition etc..
As shown in the results, each operating parameters performs different relations and phenomenon in these steady and unsteady steps: Operating pressure can affect the activity of chemical reaction strongly in unsteady or steady region. Larger gap between wafer and shower head causes less influence by flow effects or buoyancy. And also, radiation heat transfer, which is adopted by RTCVD process, can decrease the influence of some parameters on flow field.

目錄
表目錄
圖目錄
中文摘要
Abstract
符號說明
第一章 緒論
1.1 研究背景與動機
1.2 文獻回顧
1.3 研究內容
第二章 理論模式
2.1 物理現象
2.1.1 化學氣相沉積反應
2.1.2 反應器爐體傳輸現象
2.2 設備與製程
2.2.1 快速熱化學氣相沉積製程設備
2.2.2 多晶矽薄膜之快速熱化學氣相沉積製程
2.3 基本假設
2.4 統御方程式
2.5 物理模型
2.5.1 模擬設備的物理模型
2.5.2 邊界與初始條件
第三章 數值模擬方法
3.1 數值模擬軟體簡介
3.2 離散化
3.3 速度與壓力的偶合演算
3.4 數值求解流程
3.5 收斂條件
第四章 結果與討論
4.1 研究主題
4.1.1 流場參數與模擬過程
4.1.2 流場連續性
4.2 格點分析
4.3 結果與分析
4.3.1 加熱過程的結果分析與討論
(a) 晶圓表面速度分佈
(b) 晶圓表面均溫性
(c) 晶圓表面沉機率
4.3.2 穩態沉積過程的結果分析與討論
(a) 晶圓表面速度分佈
(b) 晶圓表面均溫性
(c) 晶圓表面沉機率
(d) 晶圓表面沉機率的理想操作驗證
4.3.3 冷卻過程的結果分析與討論
(a) 晶圓表面速度分佈
(b) 晶圓表面均溫性
(c) 晶圓表面沉機率
第五章 結論與建議
5.1 結論
5.2 建議
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