低壓化學氣相沉積(Low Pressure Chemical Vapor Deposition, LPCVD)是近年來在半導體製程上重要的技術之一，製程的研發過程中，以數值模擬方法是最經濟且最有效率的方法，本文以單一晶片式LPCVD、冷壁式(Cold Wall)反應器沉積矽為主要的研究對象，利用數值模擬方法分析探討各種噴氣頭(showerhead)的性能，在不同的噴氣頭設計下，反應室內的流場分佈情形與沉積率的影響。
本研究探討冷壁式的反應器，空間假設為穩態層流，討論參數為 (1)入口速度、(2)入口孔徑、(3)噴氣頭尺寸，探討反應器的流場分佈情形，並觀察其沉積率的變化。通常會影響沉積均勻性的因素為反應器內部產生迴流或腔體內流場突然分離，此即因體積膨脹而導致的迴流現象，而避免此情形即降低腔體壓力或採取分子量較小的氣體（如氫）。
數值模擬的結果顯示：(1)沉積率隨入口速度約成正比關係、(2)入口速度越慢，流場越均勻、(3)入口孔徑越小，孔距越小薄膜沉積均勻性越好、(4)採用噴氣頭可減少反應器內部迴流的產生，對晶圓均勻性有很大的幫助。

Low pressure chemical vapor deposition (LPCVD) is one of the important technics in the semiconductor process recently. The computer simulation is the best efficient method on the process research. This research use numerical method to study the performance of showerhead parameters, and to confer the flow field distribution and deposition rate under different design parameters in LPCVD of silicon (Si).
In this simulation, the CVD reactor modelings are constructed and discredited by using implicit finite volume method. The grids are arranged in a staggered manner for the discretization of the governing equations. Then the SIMPLE-type algorithm is used to solve all of the discretized algebra equations. The variable parameters are: (1) the inlet velocity, (2) the holes diameter of showerhead, (3) the showerhead size.
The results show that using the showerhead can adjust the flow filed distribution and it is better for film thickness uniformity. The holes diameter and distribution density have relations with film uniformity. We also proved that the growth rate increase with the inlet velocity under the some conditions.

目錄
圖目錄
表目錄
論文摘要（中文）
論文摘要（英文）
符號說明

第一章 緒論
1.1 研究背景與動機
1.2文獻回顧
1.3 研究內容

第二章 理論模式
2.1 物理模型
2.1.1薄膜沈積原理
2.1.2化學沈積反應機制
2.1.3沉積速率
2.1.4反應器腔體傳輸現象
2.2 基本假設
2.3 統御方程式
2.4沈積特性與壁函數
2.5 物理模型
2.6 邊界條件

第三章 數值模擬方法
3.1 數值模擬軟體簡介
3.2 SIMPLE演算法則
3.3 上風差分法
3.4收斂條件

第四章 結果與討論
4.1模擬案例分析
4.2格點分析
4.3研究主題與邊界條件
4.3 模擬結果與討論
4.4.1噴氣頭尺寸分析
4.4.2噴氣頭入口孔徑分析
4.4.3噴氣頭入口速度分析
4.4.4腔體壓力分析

第五章 結論與建議
5.1 結論
5.2 建議

參考文獻

1.Y Kusumoto, T. Hayashi, and S. Komiya, “ Numerical Analysis of the
transport Phenomena in MOCVD Process” , Jap. J. Appl.
2.G. Evans, K. Grei, “ Effects of Boundary Conditions on the Flow and Heat
Transfer in Rotating disk Chemical Vapor Deposition Reactor” , Numerical
Heat Transfer, Vol.12 , pp.243-252, 1987
3.N. Shibata and S. Zembutsu, “A Boundary layer Model for the MOCVD Process
in a Vertical Cylinder Reactor”, Jap. J. Appl. Phys. Vel.26, No.9,Sep,1987,
pp. 1416-1421.
4.W. Y. Chung, “Modeling of Cu thin film growth by MOCVD process in a
vertical reactor”, J. Crystal Growth, Vol.180, pp.691-697, 1997
5.D. I. Fotiadis, S. Kieda, K. F. Jensen, “ Transpoet Phenomena in Vertical
Reactors for Metalorganic Vapor Phase Epitaxy ” , J. Crystal
Growth,Vol.102, pp.441-470, 1990
6.R. L. Mahajan and C. Wei, “Boundary, Soret, Dufour, and Variable Property
Effects in Silicon Epitaxy”, J. Heat Transfer, Vol.113, Aug.1991, pp.668-
695.
7.C. R. Kleijn, “On the Modeling of Transport phenomena in Chemical Vapour
Deposition and its Use in Reactor Design and Process Optimization”, Thin
solid Films, 206(1991)47-53.
8.C. R. Kleijn, “A Mathematical Model o f the Hydrodynamics and Gas-Phase
Reactions in Silicon LPCVD in a Single-Wafer Reactor”, J. Electrochem.
Soc., Vol.138, No.7, July 1991.
9.P. N. Gadgil, “Optimization of a Stagnation Point Flow Reactor Design for
Metalorganic Chemical Vapor Deposition by Flow Visualization”, J. Crystal
Growth 164(1993)302-312.
10.J. Lee, S. J. Lee, “The effect of nozzle aspect ratio on stagnation region
heat transfer characteristics of elliptic impinging”, J. Heat and Mass
Transfer, Vol.43, pp.555-575, 2000
11.Z. Nami , Student Member, IEEE, A. Erbil, G. S. May, Member, IEEE , ”
Reactor Design Considerations for MOCVD Growth of Thin Films, ”IEEE
Transactions on Semiconductor Manufacturing,vol.10,no.2,May,pp 295-306,1997
12.Y.K. Chae, Y.E gashira, Y. Shimogaki, K. Sugawara,and H. Komi- yama ”
Chemical Vapor Deposition Reactor Design Using Small-scale Diagnostic
Experiments Combined with Computational Fluid Dynamics Simulations”,
Journal of The Electrochemical Socirty,146(5)1780-1788,1999
13.W. K. Cho , D. H. Choi*, M.-U. Kim” Technical Note Optimization of inlet
concentration profile for uniform deposition in a cylindrical chemical
vapor deposition chamber” International Journal of Heat and Mass Transfer
42,pp 1141-1146,1999
14.Y. Gao,*Daniel A. Gulino,* and Ryan Higgins**”Effects of susceptor
geometry on gan growth on si(111) with a new MOCVD reactor”MRS Internet J.
Nitride Semicon. Res.4s1,G3.53,1999
15.H.V. Santen, C.R. Kleijn, Harry E.A. Van Den Akker “On trubulent flows in
cold-wall CVD reactors” J. C. Growth 212 (2000) 299-310.
16.H.V. Santen, C.R. Kleijn, Harry E.A. Van Den Akker ”Symmetry Beraking in a
stagnation-flow CVD reactor” J. C. Growth 212 (2000) 311-323.
17.Hitoshi Habuka “Hot-wall and cold-wall environments for silicon epitaxial
film growth” J. C. Grwoth 223 (2001) 145-155.
18.Nobuyuki Imaishi*, Tsuneyuki Sato, Masayuki Kimura, Yasunobu Akiyama,
“Micro/marco modeling of CVD synthesis” J. Crystal Growth, Vol.180, pp.680-
690, 1997
19.M. Rebhan, M. Rohwerder, M. Stratmann, ”CVD of silicon and silicides on
iron” Applied Surface Science ,Vol. 140, pp.99-105, 1999
20.M. T. Swihart, S. Nijhawan, M. R. Mahajan, S.-M. Suh, S. L.Girshick,
“Modeling the nucleation kinetics and aerosol dynamics of particle
formation during CVD of silicon from silane” J. Aerosol Sci. Vol. 29,
pp.S79-S80, 1998
21.Woo S. Cheong!, Nong M. Hwang",#,*, Duk Y. Yoon, “Observation of nanometer
silicon clusters in the hot-"lament CVD process” J. Crystal Growth,
vol.204, pp.52-61, 1999
22.Miyahara 4-Chome, Yodogawa-ku, Osaka, “An effective method for developing
process equipment with CFD simulation” International Symposium on
Semiconductor Manufacturing, VI-4, pp.129-132, 1994
23.Anantha Krishnan, Ning Zhou, Andrzej Przekwas, ”A computational model for
chemical vapor deposition processes in industrial reactors” IEEE,
InterSociety Conference on Thermal Phenomena, pp.222-236,1994
24.J. Nishizawaa,b,*, A. Muraia, T. Oizumia,b, T. Kurabayashia,b, K.
Kanamotoa, T. Yoshidaa,b, “Surface reaction and selective growth
investigation of temperature modulation Si molecular-layer epitaxy” J.
Crystal Growth, Vol.233, pp.161-166, 2001
25.Heru Setyawan, Manabu Shimada, Kenji Ohtsuka, Kikuo Okuyama .
“Visualization and numerical simulation of fine particle transport in a low-
pressure parallel plate chemical vapor deposition reactor” Chemical
Engineering Science, Vol.57, pp.497-506, 2002
26.Schmidt, F., Fissan, H., & Schmidt, K. G. “Transport of submicron
particles from a leak to a perpendicular surface in a chamber at reduced
pressure” J. Aerosol Science, 27(5), pp.739–750, 1996
27.Choi, S. J., Rader, D. J., & Geller, A. S. “Massively parallel simulations
of Brownian dynamics particle transport in low pressure parallel-plate
reactor” J. Vacuum Science and Technology A,14(2), pp.660–665,1996
28.MacGibbon, B. S., Busnaina, A. A., & Fardi, B. “The effect of
thermophoresis on particle deposition in a tungsten low pressure chemical
vapor deposition reactor” J. Electrochemical Society, 146(8), pp.2901–
2905, 1999 Thermophore
29.Oh, M. D., Yoo, K. H., & Myong, H. K. “Numerical analysis of particle
deposition onto horizontal freestanding wafer surfaces heated or cooled”.
Aerosol Science and Technology, 25, pp.141–156, 1996
30.莊達人,”VLSI 製造技術” , 高立圖書有限公司, 2000
31.王啟明,”化學氣相沈積之熱流場分析”, 國立中山大學機械工程研究所碩士論文,
2001
32.鄭偉鳴,”垂直式CVD反應器內薄膜成長之參數探討”,國立中山大學機械工程研究所碩
士論文, 2002
33.許進旺,” 金屬有機物化學蒸氣沉積反應爐之熱流場數值模擬” ,國立屏東科技大學機
械工程系碩士學位論文，2000
34.林勳棟,” 垂直式CVD反應器之流場模擬分析” ，義守大學材料科學與工程學系碩士論
文，1999
35.李鴻傑,” 有機金屬化學氣相沉積出口效應之數值模擬”,國立中山大學機械工程研究
所碩士論文, 2002
36.陳駿福,”電子迴旋共振反應室之噴氣頭性能模擬”,國立中央大學機械工程研究所碩士
論文, 1997
37.李世鴻，”積體電路製程技術”五南圖書出版公司，1998