s-i-n+ 結構的 GaAs其電調制反射光譜中存在許多FKOs，而且對光譜進行快速傅立葉轉換後，可分離出相對於輕電洞與重電洞躍遷的peak，本文將在弱調制場的條件下，利用FKO的振盪週期與FFT的方法分析光譜，得到外加偏壓與電場關係，並進一步求得不同光能量與有效縮減質量之關係。

The electroreflectance (ER) of surface-intrinsic-n+ type doped GaAs has exhibited many Franz-Keldysh oscillations to enable the application of fast Fourier transform to separate the heavy and light-hole transitions. In this work, we can get the dependence of surface electric field on external biased voltage from analyzing the Franz- Keldysh oscillations and the way of fast Fourier transform on condition that weakly modulated field, further more we can get the dependence of effective reduced mass on changed photon energy.

第一章 導論………………………………………1
第二章 調制光譜…………………………………6
2-1介電函數與反射率…………………6
2-2電子躍遷理論…………………….10
2-3譜線圖形分析…………………….14
2-4 FKOs與漸進式……………………19
2-5傅立葉轉換的分析……………….27
第三章 實驗設計與操作……………………….31
3-1實驗樣品與能帶結構…………….31
3-2實驗架構與調制原理…………….37
第四章 實驗分析與討論……………………….41
4-1表面電場與外加偏壓分析……….41
4-2外加光能量對有效縮減質量影響.46
第五章 結論…………………………………….51
參考文獻……………………………………………52

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