光致電流顯微術已廣泛的應用在半導體元件及積體電路上，在本實驗中被用來量測半導體元件的反應時間，在極短的反應時間裡我們可以擁有很高的空間解析度，透過脈衝雷射、雷射共焦掃描顯微鏡和RF Lock-in Amplifier等儀器，以及利用飛行時間式電荷傳導量測系統(Time-of-Flight)量測載子在半導體鍺的漂移速率(drift velocity)，而雷射是經由共焦掃描顯微鏡後打在樣品上，所以激發的範圍由掃描區域大小決定，不同於以往的量測方法，我們所求得半導體的漂移速率具有面的特性，可以對半導體上一整個面作時間的解析，藉此瞭解載子在半導體上的傳輸特性。

Optical beam induced current mapping has found wide-spread applications in charactering semiconductor devices and integrated circuitry. Conventionally a focused cw laser beam is employed to excite carriers in the depletion region that is subsequently detected to form the contrast signal for scanning imaging. Device defects that may quench the photo-generated carriers can then be easily revealed. However, such detection is static in nature and the dynamics behavior of a device remains unknown. In this study, we are using a pulsed laser with high repetition rate and a high frequency phase sensitive lock-in loop to achieve temporal resolution at sub-nanosecond. In this way, the temporal response at a selected position on the device can be characterized

目錄

摘要
目錄
圖目錄

第一章 實驗導論

第二章 時間解析之光致電流原理
2.1 光致電流的原理
2.2 DC OBIC, RF OBIC & Time-resolved OBIC
2.3 RF訊號量測原理
2.4 飛行時間式電荷傳導系統原理

第三章 實驗架設與儀器介紹
3.1 OBIC光路與電子線路圖
3.2雷射光源
3.3共焦掃描顯微系統
3.4低噪音前至放大器(Low-noise Preamplifier)
3.5鎖相放大器(Lock-in Amplifier)

第四章 實驗結果及數據分析
4.1 實驗簡介
第一部份：
4.2樣品介紹
4.3 DC OBIC影像
4.4 Time-Resolved OBIC影像
第二部份：
4.5 樣品介紹
4.6 DC OBIC影像及Time-resolved OBIC影像

第五章 結論與未來展望
5.1 結論
5.2 未來展望

附錄一 共焦掃描顯微鏡校正程序
附錄二 Matlab程式語法 頁次

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