本論文的目的是對高功率藍光砷化鎵( InGaN )發光二極體進行封裝，探討在不同黏著基台( Sub-mount )下封裝後的散熱特性，期望利用矽與銅的高熱傳導係數，有效率的將熱經由 Submount 至底下的引線架與散熱板。
吾人設計兩種 Submount 結構來做為散熱用的基台。將高功率發光二極體黏著在已定義電極的 Silicon Submount 上，兩種結構的差別在於是否 Submount 底下有挖洞並填補銅進去，使發光二極體發光發熱後能快速經由銅的傳導進入底層的引線架與散熱板。
本實驗將利用熱相儀對 Submount 結構進行溫度分析，利用光譜色度儀對出光亮度進行分析。量測填銅的 Si 基台和 Si 基台的熱阻於一瓦時分別為 12.77℃/W 和 18.79 ℃/W 。由此得知在相同矽基台厚度下，填銅的 Si 基台具較佳之熱傳導效率。

　　A high efficient packaging technique was proposed for power InGaN light emitting diodes( LEDs ).In this approach , sub-mounts based on Si bench technology were used to provide a fact heat conducting channel between the LEDs and the cases.Two different structures of the Si sub-mounts were used, namely, a conventional Si block and a Si block with a copper-filled V-groove.
　　The thermal resistance of the two different sub-mounts were measured and compared. For a 45mil power LED biased at 1W, thermal resistance of 12.77℃/W and 18.79℃/W were measured for the Si sub-mount and the Si sub-mount with copper-filled V-groove. We believe the better thermal resistance of the sub-mount with copper-filled V-groove is due to high thermal conductivity of the copper.

目錄
第１章 導論 1
第１節 近代發光二極體歷史 1
第２節 研究動機 4
第２章 理論基礎與儀器介紹 7
第１節 熱管理 7
第２節 濕蝕刻原理 11
第３章 元件之製作 15
第１節 填銅 Submount 製作 15
第２節 純Si Submount製作 38
第４章 量測與分析 43
第１節 散熱特性量測 44
第２節 光學特性量測 49
第５章 實驗結果與討論 53

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