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論文名稱 Title |
高電阻率半導體磊晶層及氧化矽抗反射膜之成長
Growth of High Resistivity Semiconductor Epilayers and Silicon Oxide Anti-Reflection Films |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
72 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2003-06-23 |
繳交日期 Date of Submission |
2003-07-02 |
關鍵字 Keywords |
高電阻率半導體、氧化矽抗反射膜 Silicon Oxide AR coating, High Resistivity semiconductor |
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統計 Statistics |
本論文已被瀏覽 5718 次,被下載 4250 次 The thesis/dissertation has been browsed 5718 times, has been downloaded 4250 times. |
中文摘要 |
本篇論文主要研究的題目是:以分子束磊晶系統成長高電阻率磊晶層及以分子束薄膜沉積系統成長氧化矽抗反射膜。 在以分子束磊晶系統成長高電阻率磊晶層方面,我們以400℃成長了晶格匹配於InP基板的In0.523Al0.477As 與 In0.527Al0.228Ga0.245As。我們以n-i-n 及 p-i-n 結構的 diode models說明了我們所量得的I-V特性曲線非線性的現象,為400℃成長之InAlAs,InAlGaAs的本質特性,並非高電阻率磊晶層與InGaAs cap layer及InP 基板間的兩個異質接面所造成的結果。而我們所成長的InAlAs,InAlGaAs在n-i-n的結構中,7V的高偏壓下,其有效電阻率仍然分別大於109 Ωcm,107 Ωcm。 另外,在氧化矽抗反射鍍膜方面,我們完成了氧化矽分子束薄膜沉積系統的架設。然後,我們量測了該系統所沉積的SiO薄膜在1550nm波長附近的折射率為1.85左右。最後,我們在一Fabry-Perot laser鏡面上,鍍上氧化矽抗反射膜,使其在1580nm的波段附近反射率降至1.7×10-4左右。 |
Abstract |
The theme of this thesis is MBE growth of high resistivity semiconductor epi-layers and MBD growth of silicon oxide anti-reflection films. For MBE growth of high resistivity semiconductor epi-layers, In0.523Al0.477As and In0.527Al0.228Ga0.245As lattice matched to InP and grown by MBE at 400℃ has been investigated. We construct n-i-n and p-i-n structure diode models to evidence that the nonlinear I-V characteristics are an intrinsic property of 400℃ In0.523Al0.477As and In0.527Al0.228Ga0.245As, and not due to barriers to current injection at the n+ InGaAs/ high resistivity epi-layer and high resistivity epi-layer/n+ InP heterojunctions. We obtained the effective resistivities of 400℃ In0.523Al0.477As and In0.527Al0.228Ga0.245As at 7V are still more than 109 Ω cm and 107 Ω cm, respectively, in n-i-n structure. They are more than sufficient for most practical applications. For MBD growth of silicon oxide anti-reflection films, we have set up the SiO MBD system in our lab. Then we measured the index of the SiO film that we deposited in the wavelength of 1550nm is about 1.85. Finally, we coated SiO anti-reflection film on one cleaved facet of a Fabry-Perot laser. The reflectance R of the coated facet is reduced to about 1.7×10-4 in the vicinity of λ=1580 nm. |
目次 Table of Contents |
目次 第一章 簡介 1 1-1前言 1 1-2大綱 2 第二章 實驗原理及系統架構 3 2-1分子束磊晶系統之架構與原理 3 2-2 氧化矽分子束薄膜沉積系統之架構與原理 5 2-3 n-i-n及p-i-n結構之模擬 7 2-3-1 InAlAs n-i-n diode model 8 2-3-2 InAlAs p-i-n diode model 15 2-3-3 InAlGaAs n-i-n diode model 26 2-4 Single layer AR coating之原理 30 第三章 實驗方法 34 3-1以MBE磊晶系統成長高電阻率材料 34 3-2 Mesa diodes之製程步驟 38 3-3 SiO抗反射層鍍膜實驗 40 3-4 穿透光強度頻譜之量測 42 第四章 實驗結果與討論 44 4-1高電阻率材料之成長 44 4-1-1 X-ray量測結果 44 4-1-2 Mesa diode I-V 特性曲線之量測結果與分析 47 4-1-3 高電阻率材料電流傳導機制分析 54 4-2 SiO抗反射層鍍膜實驗之結果與討論 57 4-2-1 SiO分子束薄膜沉積系統鍍率之量測 57 4-2-2 SiO薄膜於1550nm波長之index量測 59 4-2-3 於以InP為基板之FP laser鏡面上 鍍SiO抗反射膜之效果 65 4-2-4 O2 RIE對SiO薄膜之影響 68 第五章 結論 70 參考文獻 71 附錄A:穿透率及反射率理論值計算程式(MathCad) 72 |
參考文獻 References |
[1] N. Chand, J. E. Johnson, W. C. Liang, L. C. Feldman, W. T. Tsang, H. W. Krautter, M. Passlack, R. Hull, J. W. Osenbach, and V. Swaminathan, “Molecular beam deposition of high quality silicon dielectric films,” J. Cryst. Growth 148, 336 (1995). [2] Grant R. Fowles, Introduction to Modern Optcs, Holt, Rinehart and Winston, Inc., 1975. [3] R. A. Metzger, A. S. Brown, W. E. Stanchina, M. Lui, R. G. Wilson, T. V. Kargodorian, L. G. McCray and J. A. Henige, “Growth and characterization of low temperature AlInAs,” J. Cryst. Growth 111, 445 (1991). [4] A. Dodabalapur and T. Y. Chang, “Molecular beam epitaxial growth of InGaAlAs/InGaAs heterojunction bipolar transistors on highly resistive low temperature InAlAs epilayers,” Appl. Phys. Lett. 61, 2796 (1992) [5] H. Kunzel, N. Grote, P. Albrecht, J. Bottcher, C. Bornholdt, “High Resistivity, Low Loss InGaAlAs/InP Optical Waveguide Grown By Low-Temperature MBE,” Electronics Letters, Vol. 28, Iss. 9, p. 844-846, 1992. [6] Pallab Bhattacharya, Semiconductor Optoelectronic Devices, 2nd ed. p. 275-277, Prentice Hall International Editions, 1997. |
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