摘要
本篇論文中我們將利用平坦化製程技術，製作1.3μm 雷射二極體，並架設一光學系統來量測我們製作的雷射之頻率響應。在雷射製作方面我們使用的是脊樑式的結構，脊樑蝕刻完成後，先以磁式濺鍍機長上一層SiO2薄膜以保護脊樑表面，然後再塗鋪上高分子材料苯環丁烯 (Benzocyclobutene, BCB)作為平坦化之用，之後使用乾蝕刻方式清除脊樑上方之BCB直至脊樑上方SiO2完全露出時停止，接著再利用濕蝕刻方式將脊樑上方之SiO2完全清除乾淨，最後蒸鍍上接面金屬。完成雷射製作後將晶片切割成laser die，其共振腔長度為500μm，寬為300μm，之後再將其mount至submound上，經過打線連接後量測其直流特性最後再由光學系統來量測雷射之頻率響應。
量測結果平坦化雷射啟動電流為34mA，啟動電壓為1.31V，雷射阻抗為10.1Ω，微分量子效率為76％，3dB頻寬為1.9G。

Abstract
Ridge-type 1.3μm InGaAsP diode lasers with planar waveguide structure have beem successfully fabricated and mounted on silicon submounds. The laser diodes were fabricated by first etch a ridge structure for light guidance.Typical ridge width is around 3μm.
After ridge etching, a SiO2 thin film was sputtered onto the sample as surface passivation layer, fllowing by the coating of Benzocyclobutene (BCB) polymer for surface planarization.The unwanted BCB polymer was removed by dry etching process until the passivation oxide can be observed.Before metallization, SiO2 layers above the ridge were removed by wet etching technique. The fabrication was completed by evaporating contact metals to the samples.
The finished samples were cleaved into laser dies with a dimension of 500μm×300μm.The dies were mounted onto a Si submound for DC and AC measurement.The threshold current of the planarized laser is 34mA.The threshold voltage and total resistance of the planar device are 1.31V and 10.1Ω.The quantum efficiency as large as 76％ is obtained.The frequency response of the device is also measured.The 3dB bandwidth is about 1.9GHz。

目錄
第一章 介紹 1
第二章 模擬分析 4
第三章 元件製作 7
3-1 平坦化雷射製程 8
3-1.1 樑脊蝕刻 8
3-1.2 平坦化 11
3-1.3 接面金屬蒸鍍 14
3-1.4 封裝 18
3-2 討論 20
第四章 高速量測系統架設及元件特性量測 24
4-1 介紹 24
4-2 DC量測結果 24
4-3 高速量測系統架設 27
4-4 AC量測結果 28
4-5 討論 32
第五章 結論 33

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