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論文名稱 Title |
以光致螢光方法對AlGaN/GaN異質結構之研究 Investigation of AlGaN/GaN Heterostructure Using Photoluminescence |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
78 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2007-07-02 |
繳交日期 Date of Submission |
2007-07-02 |
關鍵字 Keywords |
光致螢光、異質結構、氮化鎵 GaN, Heterostructure, PL, Photoluminescence |
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統計 Statistics |
本論文已被瀏覽 5757 次,被下載 6878 次 The thesis/dissertation has been browsed 5757 times, has been downloaded 6878 times. |
中文摘要 |
本論文主要使用變溫光致螢光方法來研究AlGaN/GaN 異質結構。文中以較多的篇幅詳細描述其原理、操作過程與分析方法,希望提供完整的使用經驗給予後人參考。實驗結果則偏重分析由異質結構中的GaN 所發出之螢光訊號,由文獻中的經驗來判斷,85K 時所量測到3.486eV、3.405eV 及3.310eV 的峰值分別由Free Exciton A、FXA-1LO 和FXA-2LO 自由激子與聲子的交互作用所貢獻。針對主波峰做高斯曲線擬合,可觀察到主波峰由(D0,X)、FXA 和FXB 所組成。最後對主波峰隨溫度之變化作一系列的分析。 |
Abstract |
We study AlGaN/GaN heterostucture using temperature dependent micro-photoluminescence. Detailing its principle, operation process and analysis is to provide usage experiences for posterity's reference. The experiment's results emphasize analysis in the photoluminescence spectrum of the GaN in the heterostructure. We believe the peaks 3.486eV, 3.405eV and 3.310eV provided from Free Exciton A, FXA-1LO and FXA-2LO respectively by experience in the cultural heritage.And the fitting result of FXA peak with Gaussian curve shows the major peak is composed by (D0,X), FXA and FXB. Finally, we analyze the major peaks' characteristics varied with the temperature. |
目次 Table of Contents |
第1 章 前言...........................................................................................6 第2 章 理論...........................................................................................7 2-1 異質結構...................................................................................7 2-2 光致螢光...................................................................................9 第3 章 實驗儀器與步驟.....................................................................14 3-1 儀器架設.................................................................................14 3-2 實驗流程.................................................................................19 3-3 數據處理.................................................................................24 第4 章 實驗數據分析.........................................................................32 4-1 實驗樣品結構.........................................................................32 4-2 實驗結果概述.........................................................................34 4-3 KTH 417 實驗結果.................................................................38 4-4 KTH 437 實驗結果.................................................................40 4-5 KTH 438 實驗結果.................................................................42 第5 章 綜合討論.................................................................................44 5-1 實驗誤差討論.........................................................................44 5-2 發光來源.................................................................................48 5-3 LO Phonon Energy ..................................................................52 5-4 主波峰分裂.............................................................................58 5-5 能隙分析.................................................................................67 5-6 半高寬分析.............................................................................70 5-7 發光強度分析.........................................................................73 第6 章 結論.........................................................................................76 Reference 77 |
參考文獻 References |
[1] Charles Kittel, “Introduction to Solid State Physics”,(1996) [2] B.C.Lee,”Tight-Binding Calculation for the Electronic Structure of the Wurtzite Quaternary Alloy AlxInyGa1-x-yN”, Journal of the Korean Physical Society, Vol. 35, No. 6, pp. 516-519, December 1999 [3] 方俊鑫,陸棟,“固態物理學(下冊)”,民91 [4] Stephen J.Pearton, “GaN and Related Materials”, ISBN 90-5699-517-0 [5] 周淑婷,“氮氧化矽絕緣層其光致發光及拉曼光譜與MOS結構電容-電壓量測之研究”,國立中山大學物理研究所碩士論文,民92 [6] 張智傑,“AlxGa1-xN/GaN量子井在低溫高磁場下的傳導研究”,國立中山大學物理研究所,民95 [7] O. Katz, B. Meyler, U. Tisch, and J. Salzman, “Determination of Band-Gap Bowing for AlxGa1-xN Alloys”, Phys. Stat. Sol. (a) 188, No.2, 789-792 (2001) [8] Y. P. Varshni, Physica (Amsterdam) 34, 149 (1967) [9] X. L. Chen,“Structure and Debye Temperature of Wurtzite GaN”, Modern Physics Letter B, Vol. 13, Nos.9&10, 285-290 (1999) [10] H. Teisseyre, “Temperature dependence of the energy gap in GaN bulk single crystals”, J. Appl. Phys. 76 (4) 2429, 15 August (1994) [11] B. Monemar, “Fundamental energy gap of GaN from photoluminescence excitation spectra”, Physical Review B 10 676 (1974) [12] Y. S. Huang, Fred H. Pollak, “Contactless electroreflectance, in the range of 20K<T<300K, of freestanding wurtize GaN prepared by hydride-vapor-phase epitaxy”, Journal of Applied Physics 94, 899 (2003) [13] D.Kovalev, B. Averboukh, D. Volm, and B. K. Meyer, “Free exciton emission in GaN”, Physical Review B 54 2518 (1996) [14] 高鳴宏,“氮化鋁鎵/氮化鎵異直結構異質結構的成長與分析”,國立中山大學物理研究所碩士論文,民93 [15] B. Monmar, J. P. Bergman, “Optical Characterisation of GaN and Related Materials”, Solid-State Electronics Vol. 41, No. 2, 181-184(1997) [16] 龐文淵提供,使用BandEng (作者Michel Grundmann-UCSB)模擬,AlxGa1-xN之x=0.31厚度200Å [17] S. J. Xu and G. Q.Li, “Temperature dependence of the LO phonon sidebands in free exciton emission of GaN”, Journal of Applied Physics 99,073508 (2006) [18] G. Martinez-Criado, “Photoluminescence study of excitons in homoepitaxial GaN”, Journal of Applied Physics 90, 5627 (2001) |
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