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博碩士論文 etd-0703103-092325 詳細資訊
Title page for etd-0703103-092325
論文名稱
Title
應用時域有限差分法模擬微波主/被動元件
Implementation of Microwave Active/Passive Elements Using the FDTD Methods
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
65
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2003-06-17
繳交日期
Date of Submission
2003-07-03
關鍵字
Keywords
主動電路、等效電流源、時域有限差分
Equivalent Current Source, Finite-Difference Time-Domain, Active Circuit
統計
Statistics
本論文已被瀏覽 5650 次,被下載 33
The thesis/dissertation has been browsed 5650 times, has been downloaded 33 times.
中文摘要
FDTD演算法是將馬克思威方程式之微分型式利用二階中央差分法將之離散化,並配合空間網格與時間網格之電磁場配置,應用於分析時域上之各種電磁問題的一種數值方法。本論文主要是應用FDTD演算法來模擬微波電路在EMC/EMI方面的問題,例如天線對混波器的干擾、小訊號微波放大器的封裝效應等問題;因此在一開始將個別就微波元件本身,應用等效電流源法來作模擬,最後才擴大到EMC/EMI的應用領域,探討FDTD演算法在全波分析上的優勢所在。
Abstract
The FDTD method is a numerical method that uses the second-order central-difference method to discrete the Maxwell’s equations in differential form, and positioning electromagnetic field in space grids and time grids. It is applied to analyze many electromagnetic problems in time domain. In the thesis, we applied FDTD methods to solve EMC/EMI problems like the interference to a mixer from an antenna, and the packaging effects to a small signal microwave amplifier and so on.

Therefore, we applied equivalent current source approach to simulate each microwave elements at first. And, we extend the approach to field of EMC/EMI. researching the advantages of FDTD methods in Full-Wave analysis.
目次 Table of Contents
I
目錄......................................................I
圖表目錄..................................................III
第一章序論................................................1
1.1 研究背景..............................................1
1.2 論文大綱..............................................1
第二章FDTD 演算法.........................................3
2.1 FDTD 之公式推導.......................................3
2.2 Courant 穩定準則......................................6
2.3 激發源................................................6
2.4 吸收邊界條件..........................................7
2.4.1 Mur 一階吸收邊界....................................8
2.4.2 完美匹配層吸收邊界..................................9
第三章集總電路元件的模擬..................................11
3.1 三維LE-FDTD 演算法....................................11
3.1.1 電阻................................................13
3.1.2 阻抗性電壓源........................................13
3.1.3 電感................................................14
3.1.4 電容................................................14
3.1.5 二極體..............................................15
3.2 混波器................................................17
3.2.1 單端混波器..........................................17
3.2.2 電路應用與模擬......................................18
第四章等效電源法..........................................23
4.1 等效電源法............................................23
4.1.1 等效電流源法........................................23
4.1.2 等效電壓源法........................................26
4.2 等效電流源法的應用與模擬..............................29
4.2.1 蕭基二極體..........................................29
4.2.2 單平衡式混波器......................................30
4.2.3 小訊號微波放大器....................................38
第五章FDTD 在EMC 之相關應用...............................44
5.1 天線對混波器的干擾....................................44
5.2 小訊號微波放大器之封裝效應............................48
第六章結論與未來展望......................................51
附錄A.....................................................52
附錄B.....................................................54
附錄C.....................................................60
參考文獻..................................................63
參考文獻 References
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Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on , 2003.

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[26] Stephen A. Maas , “Nonlinear Microwave Circuits ,” Boston , MA:Artech House , 1988.

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