本文主要透過Shubnikov-de Haas(SdH)量測來研究不同鋁含量對鐵摻雜之AlxGa1-xN/GaN異質結構材料在低溫高磁場下的傳導現象。在樣品KTH640(X=0.402)、KTH643(X=0.471)、KTH642(X=0.549)、KTH644 (X=0.551)中發現電子占據最低的兩個次能帶，兩個能帶的能量差在照光前分別為98 meV、107 meV、111 meV、119 meV。在樣品KTH641(X= 0.294)、KTH640(X= 0.402)、KTH642(X= 0.549)、KTH644(X=0.551)中則觀察到明顯的電子自旋分裂現象，實驗所得的自旋分裂能量差，最高可10.6 meV。而這六塊樣品在經過藍色LED 照光後皆有正持續光導效應。

In this thesis, we study the magnetro-transport properties of Fe-doped AlxGa1-xN/GaN heterostructure with different Al content by Shubnikov-de Haas measurements. On the samples KTH640(x=0.294)、KTH643(x=0.344)、KTH642(x=0.390)、KTH644 (x=0.397), we find that the electron have occupied the lowest two subbands, and the energy separation for each sample before illumination is 98 meV、107 meV、111 meV、119 meV. On the samples KTH641(x= 0.216)、KTH640(x= 0.294)、KTH642(x= 0.390)、KTH644(x= 0.394), we observe the electrons have spin splitting phenomenon, and the highest spin splitting energy separation’s value in our experiments is 10.6 meV. For all six samples have persistent photoconductivity effect’s behavior after illumination.

第一章 前言 1
第二章 實驗原理 2
2-1 3He系統降溫原理 2
2-2 正持續光導效應(PPC)及負持續光導效應(NPPC) 4
第三章 實驗儀器與步驟 6
3-1 實驗儀器硬體簡介 6
3-1-1 杜瓦瓶主要構造 8
3-1-2 Helium 3 Insert 11
3-1-3 實驗室管路配置 15
3-2 實驗步驟 18
3-2-1 準備工作 18
3-2-2 預冷 19
3-2-3 傳輸液氦 20
3-3 樣品層降溫 22
3-4 樣品的變溫與照光 24
3-4-1 變溫 24
3-4-2 照光 27
3-5 量測程式與儀器接線 28
3-6 更換樣品與實驗結束工作 29
第四章 實驗結果分析與討論 31
4-1 實驗樣品 31
4-2 樣品表面分析 34
4-3 低溫實驗結果分析 36
4-3-1 樣品KTH645(Al0.191Ga0.809N/GaN) 37
4-3-2 樣品KTH641(Al0.216Ga0.784N/GaN) 39
4-3-3 樣品KTH640(Al0.294Ga0.706N/GaN) 45
4-3-4 樣品KTH643(Al0.344Ga0.656N/GaN) 51
4-3-5 樣品KTH642(Al0.390Ga0.610N/GaN) 56
4-3-6 樣品KTH644(Al0.397Ga0.603N/GaN) 61
4-4 分析與討論 67
第五章 結論 73
參考文獻 74

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