使用六氟矽酸、氨水和硼酸溶液可以用來成長氮氧化矽薄膜，成長速率和折射係數將隨著氨水濃度提高而增加，但是當氨水濃度太高折射係數反而減少。隨著氨水濃度的改變，漏電流和崩潰電壓將被討論，氨水濃度在0.8M是最佳條件。
從二次離子的縱深分析得知，氮和氫豐富的累積在薄膜和基板的介面上。我提出一個模型並認為成長的薄膜是由豐富氮原子累積的膜及較缺乏氮濃度的膜所組成，並且最好的電特性表現在厚度110Å到220Å之間。
參考Photo-LPD-SiO2膜的製作，我提出了照光激發液相沈積法。藉由汞燈照光的激發，在界面的氮原子濃度將會提高，電特性的表現也變的更好。
一個新的液相沈積技術被提出，我稱它作偏壓加強液相沈積法，在此也提出了沈積機制的模型。在負偏壓的基板上可以取得高濃度氮的氮氧化矽膜，其電特性在0.1V的正偏壓基板及0.1V到1V的負偏壓基板比傳統的液相沈積法的表現好，在沈積速率方面，不管是加正偏壓或負偏壓的基板都有明顯的提高，所以偏壓加強液相沈積法可以製作出高品質和高沈積速率的氮氧化矽。

ASTRACT

Using an aqueous solution of ammonia hydroxide aqua, hydrosilicofluoric acid and boric acid, an oxynitride film can be deposited. The deposition rate and refractive index increase with the mole concentration of ammonia hydroxide aqua. However, the refractive index decreases as the mole concentration of ammonia hydroxide aqua becomes too high. The leakage current density as a function of mole concentration of ammonia hydroxide aqua was studied. The best experimental condition is found that incorporating ammonia hydroxide aqua of 0.8M will get good results.
The SIMS depth profiles shows nitrogen and hydrogen concentration accumulate at SiON/Si interface. A deposition model is proposed and LPD-SiON can be suggested that it is a combination of N-less LPD-SiON film and N-rich accumulated layer at the interface. The best characteristics of LPD-SiON film are in the range of 110Å-thick to 210Å-thick. When the thickness scales down to 110Å, all the properties become poor.
Photo-LPD-SiON process is proposed as a reference of Photo-LPD-SiO2. By mercury lamp illumination, the performances of J-E relationship and C-V characteristic become better. Nitrogen atomic concentration can increase by photo-enhancement checked by analysis of SIMS depth profile and FTIR spectrum.
A novel technique of LPD process with applying a bias during the growth is proposed and it is called Bias-LPD-SiON. A model of Bias-LPD-SiON deposition mechanism is also proposed. On the negative bias substrate, high nitrogen atomic concentration can be attained. The J-E characteristic at positive bias of 0.1V and negative bias in a range of 0.1V to 1V are better than traditional LPD-SiON film. Then, the deposition rate of positive bias and negative bias LPD-SiON films at 0.1V can reach 32Å/min and 26Å/min, respectively. Therefore, high quality and high deposition rate can be prepared by Bias-LPD-SiON.

CONTENTS

LIST OF FIGURES.................................vv
LIST OF TABLES.................................vii
ABSTRACT......................................viii

1. Introduction..................................1
1-1 Background...................................1
1-1-1 Silicon Dioxide............................1
1-1-2 Silicon Oxynitride.........................2
1-2 Mechanisms of LPD-SiON.......................5
1-3 Advantages of LPD............................6
1-4 Motivation of Bias-LPD-SiON..................7

2. Experiments...................................9
2-1 Deposition System............................9
2-2 Deposition Procedures.......................10
2-2-1 Si Wafer Cleaning.........................10
2-2-2 Preparation of Deposition Solutions.......10
2-2-3 Preparation of Sample.....................12
2-2-4 Preparation of Photo-LPD-SiON.............12
2-2-5 Preparation of Bias-LPD-SiON..............12
2-3 Fabrication of Metal-oxide-semiconductor
Structure...................................13
2-4 Characterizations...........................14
2-4-1 Physical and Chemical Properties..........14
2-4-2 Electrical Properties.....................14

3. Results and Discussion.......................17
3-1 A Model for LPD-SiON Film Deposition
Mechanisms..................................17
3-1-1 LPD-SiO2 Film Deposition Mechanisms.......17
3-1-2 X-ray Diffraction (XRD) of LPD-SiON Films.18
3-1-3 Proposing of LPD-SiON Deposition
Mechanisms................................18
3-1-4 Rechecking by SIMS depth profile..........19
3-1-5 Rechecking by AES Depth Profile...........20
3-1-6 SEM Views of LPD-SiON Films...............20
3-1-7 Surface Views of LPD-SiON Film............21
3-2 Properties of LPD-SiON Films as a Function
of Deposition Time..........................21
3-2-1 Deposition Rate and Refractive Index as
a Function of Deposition Time.............21
3-2-2 Analyses of FTIR Spectra..................22
3-2-3 Surface Analyses of AFM Image.............22
3-2-4 Electric Characteristics..................23
3-3 Properties of LPD-SiON Films as a Function
of Molarity of Ammonia Hydroxide Aqua.......28
3-3-1 Deposition Rate and Refractive Index as
a Function of Molarity of Ammonia Hydroxide
Aqua......................................28
3-3-2 SIMS Depth Profiles and Analyses..........29
3-3-3 Electric Characteristics..................30
3-4 Photo-enhancement Effect of LPD-SiON........31
3-4-1 SIMS Depth Profiles and Analyses..........31
3-4-2 Analysis of FTIR Spectra..................32
3-4-3 Electrical Characteristics................33
3-5 Characteristics of Bias-LPD-SiON............35
3-5-1 Proposing of Bias-LPD-SiON Deposition
Mechanisms................................35
3-5-2 Rechecking of SIMS Depth Profile..........36
3-5-3 Analyses of FTIR Spectra..................36
3-5-4 Determination of a Current Meter Strung in
the Electric Loop.........................37
3-5-5 Deposition Rate as Functions of Positive
and Negative Bias.........................38
3-5-6 Current Density-Electrical Field (J-E)
Characteristics...........................39
4. Conclusions..................................40

FIGURES 42~81
TABLES 82~83
REFERENCES 84~90

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