離子場效應電晶體(Ion-sensitive field effect transistor ,ISFET)相較於傳統離子感測電極所沒有的，係具有尺寸小、響應快及與標準IC製程相容等優點。ISFET主要結構相似於MOSFET但其差異在於MOSFET之金屬閘極被參考電極/電解液/絕緣層(離子感測膜)所取代，且元件直接被置於酸鹼緩衝溶液中，使得感測膜表面產生電位變化，藉此電位變化即可量測出溶液中之H+離子或其他離子濃度。
本論文係以溶膠-凝膠(Sol-Gel)法製備非晶形鈦酸鉛(PbTiO3)薄膜作為H+離子場效電晶體之感測閘極；將鈦酸鉛薄膜披覆在SiO2/p-Si(100)基板上以形成EIS結構，其中氧化層SiO2厚度為1000Å，並利用電容-電壓(C-V)量測以獲得平能帶電位(Flat band)偏移的現象。實驗結果發現，在鈦酸鉛薄膜燒結溫度約4000C與厚度約0.5

Ion-sensitive field effect transistors (ISFET's) have many advantages than the conventional ion selective electrode. Small size, fast response and compatible with conventional IC technologies were the most important advantages. The general structure of ISFET was the same with MOSFET, but the main difference is that the metal gate in MOSFET was replaced by reference electrode/electrolyte/insulator(ionic sensor membrane) structure in ISFET. The insulator surface will suffer the change of potential as the is sample immersed into electrolyte, by which, we can measure the pH or other ionic concentration.
In this thesis the amorphous lead titanate (a-PbTiO3) thin film was prepared by sol-gel method to be the sensor gate of ISFET. The lead titanate thin films were deposited on SiO2(1000Å)/p-Si substrates, and the EIS structure was obtained. The flat-band voltage(ΔVBF) can be shifted by C-V measurement. The optimum conditions were found that the firing temperature was about 4000C and thin film thickness was about 0.5

目 錄
摘 要 I
目 錄 V
圖表目錄 X
第一章 前 言 1
第二章 溶膠－凝膠法製備薄膜與分析 4
2.1 溶膠－凝膠法 4
2.1.1 起始溶液的調配 5
2.1.2 薄膜製作 5
2.1.3 低溫焦化處理 6
2.1.4 高溫結晶熱處理 6
2.2 初始溶液的研製與調配 6
2.2.1 初始原料的選用 6
2.2.2 溶液調配 8
2.2.3 溶液成分分析 8
2.3 薄膜的製作 8
2.3.1 基板的選擇與清洗 8
2.3.2 薄膜披覆 9
2.4 熱處理過程 10
2.4.1 低溫焦化 10
2.4.2 高溫結晶 10
2.5 薄膜性質分析 11
2.5.1 X光繞射分析 11
2.5.2 掃瞄式電子顯微鏡分析 12
第三章 MIS與EIS結構之探討 13
3.1 pH-ISFET與MOSFET之異同 13
3.2 MIS結構 13
3.2.1 MIS結構理論 13
3.2.2 界面電荷 15
3.2.3 MIS結構製備 16
3.2.4 C-V量測系統與接線 16
3.2.5 MIS結構的C-V特性曲線 17
3.3 吸附鍵結模型 17
3.4 EIS系統 20
3.4.1 EIS之理論 20
3.4.2 EIS結構的製備 21
3.4.3 EIS結構的包裝 21
3.4.4 C-V量測系統 21
3.4.5 不同厚度之影響 22
3.4.6 不同溫度之影響 24
第四章 pH-ISFET元件 26
4.1 pH-ISFET的基本結構 26
4.2 pH-ISFET的工作原理 26
4.1.1 MOSFET元件 26
4.1.2 ISFET元件 27
4.1.3 恆壓恆流法電路量測原理 31
4.3 ISFET元件之設計 31
4.3.1 SiO2 gate ISFET元件之製作 31
4.3.2 PbTiO3 gate ISFET 元件之製作 32
4.4 ISFET封裝 33
4.5 I-V量測系統 33
4.6 I-V量測結果 34
4.6.1 ISFET的IDS-VGS量測 34
4.6.2 ISFET的IDS-VDS量測 35
4.7 讀出電路量測 37
4.7.1 pH-ISFET簡易讀出電路之分析 37
4.7.2 量測結果 38
4.7.3 不同材料的比較 38
4.8 PbTiO3 gate ISFET之特性 38
第五章 不理想效應之研究 40
5.1時漂效應之探討 40
5.1.1 時漂之定義 40
5.1.2 時漂效應理論之研究 40
5.1.3 時漂量測系統 41
5.1.4 時漂之結果與討論 41
5.2 遲滯效應之研究 42
5.2.1 遲滯之基本定義 42
5.2.2 遲滯效應理論之研究 42
5.2.3 遲滯量測系統 43
5.2.3 遲滯現象之結果與討論 43
5.3 響應穩定時間之探討 44
5.3.1 響應時間之定義 44
5.3.2 響應穩定時間之量測與系統建立 44
5.3.3 反應速率之結果與討論 45
5.4 生命週期之探討 45
5.4.1 生命週期之量測與討論 45
第六章 結論 47
參考文獻 49

圖表目錄
頁次
圖1.1 本論文之研究流程圖…………………………………… 57
圖2.1 旋轉塗佈薄膜之步驟圖………………………………… 58
圖2.2 PbTiO3薄膜製備流程圖………………………………… 59
圖2.3 鈦酸鉛之晶體結構(a)頂視圖 (b)立體圖………… 60
圖2.4 以不同溫度進行熱處理PbTiO3之X-ray圖形………….. 61
圖2.5 不同厚度之PbTiO3.的SEM圖形：(a) 0.25

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