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論文名稱 Title |
不同溫度下氮化銦的光調制反射光譜 Photoreflectance spectroscopy of InN at different temperature |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
49 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2005-06-27 |
繳交日期 Date of Submission |
2005-07-04 |
關鍵字 Keywords |
光調製、激子、氮化銦、反射光譜 InN, photoreflectance, exciton |
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統計 Statistics |
本論文已被瀏覽 5650 次,被下載 2160 次 The thesis/dissertation has been browsed 5650 times, has been downloaded 2160 times. |
中文摘要 |
InN由於擁有很高的電子遷移率,所以在製作高速電子元件上面很有潛力,但其能隙確切數值還有所爭議。本文以光調制反射光譜(PR)在不同溫度下,探討InN的能隙變化,並利用低電場下的三階調制光譜公式的模擬情況,來判定實驗所得PR光譜的躍遷類型。 |
Abstract |
InN is a semiconductor material of vary high electron mobility, so InN have potential for high speed electronic device. But the bandgap is not sure. We use photoreflectance spectroscopy to investigate bandgap of InN at different temperature. We use third derivative reflectance formula of low field to fit experimental data and appraisal the type of electron transition. |
目次 Table of Contents |
第一章 簡介與相關理論....................................3 1-1 氮化銦(InN)簡介.......................................3 1-2 調制光譜學簡介........................................4 1-3相關理論介紹...........................................5 第二章 調制光譜..........................................9 2-1 調制光譜..............................................9 2-2 電子躍遷理論.........................................12 2-3反射率、吸收係數與介電函數............................16 2-4 調制光譜與Aspnes的三次導數形式.......................22 第三章 實驗樣品與設置...................................28 3-1 實驗樣品.............................................28 3-2 實驗設置.............................................32 第四章 實驗結果與分析...................................36 4-1 實驗之模擬圖形.......................................36 4-2 實驗結果分析.........................................41 第五章 結論.............................................45 參考文獻...........................................46 |
參考文獻 References |
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