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博碩士論文 etd-0704105-134536 詳細資訊
Title page for etd-0704105-134536
論文名稱
Title
不同溫度下氮化銦的光調制反射光譜
Photoreflectance spectroscopy of InN at different temperature
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
49
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2005-06-27
繳交日期
Date of Submission
2005-07-04
關鍵字
Keywords
光調製、激子、氮化銦、反射光譜
InN, photoreflectance, exciton
統計
Statistics
本論文已被瀏覽 5650 次,被下載 2160
The thesis/dissertation has been browsed 5650 times, has been downloaded 2160 times.
中文摘要
InN由於擁有很高的電子遷移率,所以在製作高速電子元件上面很有潛力,但其能隙確切數值還有所爭議。本文以光調制反射光譜(PR)在不同溫度下,探討InN的能隙變化,並利用低電場下的三階調制光譜公式的模擬情況,來判定實驗所得PR光譜的躍遷類型。
Abstract
InN is a semiconductor material of vary high electron mobility, so InN have potential for high speed electronic device. But the bandgap is not sure. We use photoreflectance spectroscopy to investigate bandgap of InN at different temperature. We use third derivative reflectance formula of low field to fit experimental data and appraisal the type of electron transition.
目次 Table of Contents
第一章 簡介與相關理論....................................3
1-1 氮化銦(InN)簡介.......................................3
1-2 調制光譜學簡介........................................4
1-3相關理論介紹...........................................5
第二章 調制光譜..........................................9
2-1 調制光譜..............................................9
2-2 電子躍遷理論.........................................12
2-3反射率、吸收係數與介電函數............................16
2-4 調制光譜與Aspnes的三次導數形式.......................22
第三章 實驗樣品與設置...................................28
3-1 實驗樣品.............................................28
3-2 實驗設置.............................................32
第四章 實驗結果與分析...................................36
4-1 實驗之模擬圖形.......................................36
4-2 實驗結果分析.........................................41
第五章 結論.............................................45
參考文獻...........................................46
參考文獻 References
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