在本篇論文中，我們將分別討論銀無電鍍技術與利用電泳技術在玻璃基材上沉積氧化鋁層並嘗試將其兩項濕製程結合應用於薄膜電晶體上。因為銀具有良好的電性，所以本篇論文選擇銀當作無電鍍的主要成分。我們將設定不同的沉積參數分別探討銀薄膜的電性與機械性質，並利用四點探針、粗度儀及奈米壓痕進行量側，此外此篇論文也將以SEM及FTIR 對無電鍍所沉積的銀薄膜進行微觀表面及成分的分析。氧化鋁電泳技術應用於沉積絕緣層的機制將進行探討，分別設定了不同濃度的氧化鋁懸浮液及電泳沉積時間，來取得較佳的沉積結果，並在最後將嘗試結合無電鍍與電泳製程等濕製程來製作薄膜電晶體上的導電層與絕緣層。首先結合黃光製程在玻璃基板上製作出圖案， 並在此基板上進行無電鍍製程，在此製程中可在基板上沉積銀薄膜達到200 奈米以上的厚度，最後將已鍍上銀薄膜的玻璃基材進行電泳製程以在銀薄膜上沉積上氧化鋁層。

In this study we present the results of electroless deposition of silver (Ag) and electrophoretic deposition (EPD) of Al2O3 layers on glass for application in thin film transistor (TFT). Since Ag exhibits excellent resistivity, it is selected to be the material of conductive layer. Ag thin film electrical and physical parameters are studied as a function of the deposition time and working temperature. We study the thin-film electrical and mechanical properties using 4-point Probe, surface analyzer and nano indenter. The Ag film, thicker than 200 nm, exhibited a specific electrical sheet resistivity of about 500 mΩ/□. We also study the thin-film morphology and composition using SEM and FTIR, respectively. In this study, Mechanism and kinetics of the electrophoretic process in an Al2O3 cell are also studied. Al2O3 concentration levels are set from 1.25 to 7.5%, and deposition time from 5~20 seconds. Deposition time and Al2O3 particle concentration is experimentally discussed and characterized. The result shows that a linear relationship between the deposition rate and applied voltage is obtained. Besides, in this study, deposition of conductive layer silver and insulating layer Al2O3 for TFT are studied. A new process to deposit Ag layer and Al2O3 layer to be the conductivity layer and insulating layer of TFT is presented. First, the circuit pattern is defined by lithography process. Then, Ag is deposited with thickness of 200 nanometers. Second, the wafer is immersed in the stripper solution to remove the resist. After the deposition of the Ag on glass is finished, Al2O3 nano-scale particle concentration is prepared for electrophoretic deposition.

目錄.............................................I
圖目錄..........................................IV
表目錄..........................................VI
中文摘要........................................VII
英文摘要........................................VIII
第一章 緒論.....................................1
1-1 研究背景與目的..............................................1
1-2 文獻回顧....................................2
1-2-1 無電鍍銀..............................3
1-2-2 電泳沉積..............................4
1-3 本文架構…..................................6
第二章 無電鍍銀之電極層製作.....................7
2-1 無電鍍技術原理..............................7
2-2 無電鍍銀鍍浴配製............................11
2-2-1 敏化劑(Sensitizer)........................11
2-2-2 金屬鍍液..................................11
2-3 無電鍍銀製程............................13
2-4 銀電極層薄膜製作........................16
2-4-1 表面處理(Seeding process).........16
2-4-2 純水沖洗(D.I. Water Rinse)........16
2-4-3 光阻剝離(Photoresist remove)......17
2-4-4 電鍍處理(Plating process).........17
2-5 鍍層性質分析............................20
2-5-1 鍍層厚度分析......................20
2-5-2 鍍層表面型態之分析................20
2-5-3 鍍層成分之分析....................21
2-5-4 鍍層機械性質之分析................23
2-5-5 鍍層電性之分析....................27
第三章 電泳沉積之絕緣層製作.....................28
3-1 電泳沉積技術原理............................28
3-2 氧化鋁絕緣層製作............................29
3-2-1 粉漿的製備................................29
3-2-2 粉漿懸浮性質..............................29
3-2-3 電泳沉積製程..............................29
3-3 電泳沉積製程設備介紹........................31
第四章 實驗結果與討論...........................35
4-1 無電解電鍍..................................35
4-1-1 無電鍍沉積時間與銀薄膜性質關係........35
4-1-2 無電鍍沉積溫度與銀薄膜性質關係........37
4-1-3 無電鍍銀鍍層成分之分析................41
4-2 電泳沉積....................................44
4-2-1 Zeta potential .......................44
4-2-2 氧化鋁電泳沉積........................46
4-2-3 燒結後薄膜性質量測....................48
第五章 結論與未來展望...........................50
5-1結論.........................................50
5-2未來展望.....................................51
參考文獻........................................52

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