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博碩士論文 etd-0704116-094223 詳細資訊
Title page for etd-0704116-094223
論文名稱
Title
奈米銀線薄膜應用UV雷射圖案化之光電性質研究
Influence of UV laser patterning on the photoelectrical property of AgNWs films
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
104
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2016-07-27
繳交日期
Date of Submission
2016-08-04
關鍵字
Keywords
奈米銀線薄膜、電噴霧技術、雷射圖案化加工、均勻法、霧度
Uniform design, Near-field electrospray, AgNWs films, Laser patterning process, HAZE
統計
Statistics
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The thesis/dissertation has been browsed 5684 times, has been downloaded 1 times.
中文摘要
奈米銀線 (Silver Nanowires)本身的長寬比造就了其構成較鬆散的導電網路,可產生超高的穿透率,具有良好導電率及高穿透率之優點,成為取代銦錫氧化物 (Indium Tin Oxide, ITO)之前瞻性材料。本研究將電噴霧技術結合355 nm UV雷射圖案化加工於奈米銀線薄膜上製作透明、均勻且具圖案化之導電奈米銀線薄膜。利用多元醇合成法 (Polyol Method)合成出最佳化一維奈米銀線,再通過電噴霧技術製成5 層、7層、9層以及11層薄膜探討其電特性及光學特性的變化。再以這四種薄膜利用均勻實驗設計雷射圖案化加工之製程參數條件以製備出最佳化之圖案化薄膜,其製程參數包括:雷射能量、雷射加工速度以及雷射加工次數。將圖案化之薄膜及最佳化參數實驗薄膜利用掃描式電子顯微鏡 (SEM)與觀察微觀表面形貌與雷射加工路徑上的奈米銀線殘留程度;進行X微光區域 (EDS)了解雷射加工後之材料成分變化與特性;應用光學儀器與四點探針,量測穿透度與導電度,探討兩個性質與薄膜厚度之間的相互關係。本實驗結果顯示在電噴電壓為5000 V且距收集板位置9 mm可成功製備奈米銀線薄膜,其薄膜片電阻能達到1.2 Ω/sq~0.2 Ω/sq。從迴歸分析之最佳化參數的實驗驗證發現,本實驗成功的將每種層數之穿透度提升了20 %,最高可達到80 %;經圖案化後之奈米銀線薄膜的霧度也降低了1~4 %。此外,實際與預測值間的誤差在 ±10 %之間,使用UV電射影響圖案化之關鍵因子為能量>次數>速度。
Abstract
Due to its high aspect ratio of silver nanowires (AgNWs), it builds a loose conductive network, which can result in high transmittance and excellent electrical conductivity. Therefore, AgNWs become a potential material to replace Indium Tin Oxide (ITO). In this study, we combined near-field electrospray with the laser ablation process to produce transparent and uniform of conductive AgNWs films. Polyol method is used to synthesize optimal AgNWs. Electrospray technology was used to fabricate 5 layers, 7 layers, 9 layers, and 11 layers AgNWs films for the changes of their electrical properties and optical properties. The uniform design was applied to determine the optimal parameter, then ablated by laser patterning process for four kinds of films. The experimental parameters by uniform design include laser power, the rate of laser ablation and processing times of laser. The patterned AgNWs films and optimal patterned AgNWs films with laser ablation are analyzed by SEM and EDS such as the morphology, the residual silver of ablation and the properties and composition. Optics instruments and four-point probe were used to measure the transmittance and conductivity. The relationship of the two characteristic and thickness of the films was discussed. From the results, the AgNWs films are fabricated at the 5000 V voltage and the distance with collecting plate is 9 mm. The sheet resistance about 1.2 Ω/sq to 0.2 Ω/sq. The optimal parameters are confirmed by laser experiment and the result shows the transmittance of each of layers are enhanced by 20 %, and the highest up to 80 %. The haze of patterned AgNWs films are also reduced by 1 % to 4 %. In addition, the variation less than ±10 % between the actual value and the predicted value. The results of regression analysis show that the factors for laser patterning are laser power > processing times of laser > the rate of laser ablation.
目次 Table of Contents
論文審定書 i
致謝 ii
摘要 iii
Abstract iv
目錄 v
圖目錄 vii
表目錄 x
第一章緒論 1
1.1 前言 1
1.2 研究背景 2
1.3 研究動機與目的 4
1.4 本文架構 5
第二章文獻回顧 6
2.1 透明導電薄膜技術發展 6
2.1.1 透明導電薄膜材料 7
2.1.2 透明導電薄膜製備方法 8
2.2 奈米銀線 10
2.2.1 奈米銀線應用透明導電材料 10
2.2.2 奈米銀線合成製備 11
2.3 靜電噴霧與靜電紡絲技術 13
2.3.1 電噴霧技術 13
2.3.2 電紡絲技術 14
2.4 雷射技術 17
2.4.1 雷射發展 17
2.4.2 雷射構造與原理 18
2.4.3 雷射種類 21
2.5 均勻實驗設計法 23
2.5.1 均勻實驗法概論 23
2.5.2 均勻設計表 24
2.5.3 均勻實驗步驟 25
第三章研究方法 27
3.1 實驗架構 27
3.2 實驗藥品與設備 28
3.2.1 奈米銀線合成之設備與藥品 28
3.2.2 電噴霧製程之設備 30
3.2.3 雷射圖案化製程之設備 31
3.3 實驗製程 33
3.3.1 奈米銀線溶液配置 33
3.3.2 奈米銀線薄膜製備 34
3.3.3 雷射圖案化製程 35
3.3.4 圖案化薄膜穿透度之最佳化分析 37
3.4 實驗分析儀器 38
3.4.1 N & K薄膜特性分析儀 38
3.4.2 接觸角儀器 39
3.4.3 四點探針 46
3.4.4 積分球 48
3.4.5 掃描式電子顯微鏡分析 52
3.4.6 EDS分析 52
第四章實驗結果與討論 54
4.1 奈米銀線導電薄膜 54
4.1.1 導電薄膜之電性量測結果 55
4.1.2 奈米銀線薄膜之表面能量測結果 56
4.1.3 奈米銀線薄膜之光學結果 59
4.2 UV雷射圖案化奈米銀線導電薄膜 61
4.2.1 雷射參數調整實驗之結果分析 61
4.2.2 均勻法實驗 64
4.2.3 奈米銀線薄膜圖案化之表面形貌分析 64
4.2.4 薄膜圖案化後之EDS分析 69
4.2.5 圖案化後薄膜光學量測結果 70
4.3 UV雷射圖案化參數最佳化 75
4.3.1 均勻法實驗-線性回歸分析 76
4.3.2 均勻法實驗-Mat lab求最佳化參數 77
4.3.3 最佳化參數之表面形貌分析 80
4.3.4最佳化參數之光學量測結果 82
第五章結論與未來展望 84
5-1 結論 84
5-2 未來展望 85
參考文獻 86
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