摘要

本論文旨在於架設室溫下光激螢光光譜量測系統，並利用光激螢光光譜(PL)研究半導體量子井混合(QWI)製程。我們在實驗中用到的試片按成長方法的不同可分為MOCVD與MBE成長的試片，其中MOCVD成長的試片為1.3mm與1.55mm對稱式量子井p-i-n雷射結構，以及兩片1.55mm非對稱量子井p-i-n雷射結構，而MBE成長的試片均為多重量子井p-i-n結構。
首先在試片表面濺鍍一層二氧化矽，並利用快速回火設備(RTA)對試片分別進行高溫回火(600℃-800℃)，濺鍍與回火後再量測室溫下PL光譜，研究分析試片經過QWI製程的波長藍移現象。從實驗結果得知以MOCVD與MBE成長的試片在經過濺鍍的過程，MOCVD成長的試片其PL訊號強度會因濺鍍而減弱，但MBE成長的試片在濺鍍後其光譜強度增加。由數據資料可歸納出試片在回火溫度700~750℃有較強的訊號強度，且隨著回火溫度的增加，其波長藍移有增加的趨勢。
MOCVD成長的1.3mm與1.55mm對稱式量子井p-i-n雷射結構，以及兩片1.55mm非對稱式量子井p-i-n雷射結構，在800℃回火的溫度下我們分別得到11nm、34nm、14nm、22nm的波長藍移，MBE成長的三個多重量子井p-i-n結構試片，在800℃回火的溫度下我們分別得到12nm、10nm、7nm的波長藍移。

Abstract

In this thesis, we have setup a photoluminescence (PL) measurement system to investigate the quantum well intermixing (QWI) effects on semiconductor multiple quantum-well (MQW) structures. The measured samples include 1.3mm and 1.55mm InGaAsP MQW laser structures grown by MOCVD, and 1.55mm InGaAlAs MQW structures by MBE.
The QWI process was performed by rapid thermal annealing at
600℃~800℃ in 1 min with a ~1300Å SiO2 layer sputtered on the semiconductor surface. Following the SiO2 sputtering and thermal annealing, room-temperature PL measurements were used to study the QWI effect. The result shows that the PL intensity is reduced for the MOCVD samples, while the MBE samples have up to 47 times increase of PL intensity. After QWI process, all the samples have a blue-shift in PL spectra. The 1.55mm InGaAsP laser structures by MOCVD have a maximum blue-shift of 34nm, and the MBE samples of 12nm after 800℃ annealing.

目錄
第一章 簡介 1
第二章 原理與方法
2-1光激螢光 4
2-1-1光激螢光基本原理 5
2-1-2複合躍遷機制 5
2-2量子井混合技術 8
2-2-1量子井混合方法 8
2-2-2量子井混合原理 9
第三章 光激螢光光譜量測系統與架設
3-1實驗儀器 11
3-2實驗系統裝置 13
3-3光路架設 15
第四章 製程步驟
4-1量子井磊晶層結構 18
4-2量子井混合製程 27
第五章 結果與分析
5-1 MOCVD成長多重量子井結構 30
5-1-1 SLD03112 30
5-1-2 LDP11082 35
5-1-2 LDP11162 39
5-1-2 SOA02061 44
5-2 MBE成長多重量子井結構
5-2-1 MQW-5Nb 53
5-2-2 MQW-5Oe 57
5-2-3 MQW-64a 62
第六章 結論 69
參考文獻 70
附錄A 72

參考文獻

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