本研究利用355 nm波長紫外光雷射 (355 nm ultraviolet laser) 結合電鑄鎳製程應用於矽穿孔封裝 (through silicon via, TSV) 加工高頻固態堆疊共振器晶片。首先，雷射實驗透過設定不同功率大小、焦距及終止直徑等參數，探討導孔側壁之錐度大小。以頻率30 kHz在能量90 %下開啟動態變焦於雷射終止直徑0.05 mm參數下，在厚度550 μm的矽晶片鑽出直徑約110 μm，深寬比約為5之孔洞，其導孔之錐度約為1.63°，此結果代表雷射鑽孔具有非常準直之導孔側壁。而在電鑄實驗中，分別以0.5 ASD、1 ASD、2 ASD及4 ASD之不同電流密度下，由電流效率與電流密度計算得沉積厚度與時間之關係後進行電鑄實驗，並且將電鑄結果利用奈米壓痕試驗機 (nanoindenter)、能量散佈光譜儀 (energy dispersive spectrometer, EDS)及X射線繞射分析 (X-ray diffraction, XRD) 等設備進行材料性質分析。在越小的電流密度下，鍍層之楊氏係數 (Young’s modulus)與電阻值越小，其晶粒大小則越大，金屬沉積之品質也較佳，唯因電鑄時所使用之電流較小，金屬沉積之時間需要較長。本論文最後亦結合雷射鑽孔以及電鑄鎳對高頻晶片進行矽穿孔封裝加工，以其能夠利用三維結構封裝的優勢大幅減少封裝體積，並在完成封裝製程後以高頻微波探針量測頻率分析，其結果顯示在2.5 GHz下，其S11值約為-3.5 dB。

In this study, Nickel electroforming was integrated with 355 nm wavelength ultraviolet laser process to fabricate the through silicon via packaging. This technology was applied to package the high-frequency solidly mounted resonator (SMR). In the laser drilling experiment, the different parameters of laser power, focus length, termination diameter were set to explore the taper size of via. The silicon sample of 550 μm thickness was drilled under dynamic zoom, laser frequency at 30 kHz, laser power at 90 %, and the termination diameter at 0.05 mm. The drilling diameter of the silicon was about 110 μm where the taper was about 1.63° and the aspect ratio was about 5.
The relationship of deposition thickness and time was obtained to electroform. The deposition thickness was calculated by current efficiency and current density and the current density was 0.5 Amps per square decimeter (ASD), 1 ASD, 2 ASD, and 4 ASD, separately. Nanoindenter, energy dispersive spectrometer (EDS), and X-ray diffraction (XRD) were used to analyze the material characteristic of electroforming samples. When the current density was lower, Young’s modulus and resistance were lower, and the grain size was lager. The deposition quality was also better than the higher current density. In the end of this study, laser drilling and electroforming were integrated to package the high-frequency SMR. Ground-signal-ground probe was used to obtain the frequency analysis. The S11 parameter was -3.5 dB where the frequency was 2.5 GHz.

論文審定書 i
致謝 ii
摘要 iii
Abstract iv
目錄 v
圖目錄 vii
表目錄 xii
第一章 緒論 1
1.1 前言 1
1.2 研究背景 1
1.3 研究目的 2
1.4 本文架構 3
第二章 文獻回顧與理論基礎 4
2.1 IC封裝技術介紹 4
2.1.1 IC封裝產業發展 4
2.1.2 IC封裝技術種類 4
2.1.3 常見IC封裝型態 7
2.1.4 TSV技術發展 10
2.2 雷射加工 11
2.2.1 雷射原理 11
2.2.2 雷射簡介 16
2.2.3 雷射加工機制 18
2.2.4 雷射種類 20
2.3 電鑄 21
2.3.1 電化學簡介 21
2.3.2 電化學理論 24
2.3.3 電鑄液種類 25
2.3.4 影響電鑄因素 26
第三章 研究方法與步驟 28
3.1 研究流程 28
3.2 雷射鑽孔加工製程 29
3.2.1 實驗機台設備 29
3.2.2 加工參數設計 32
3.3 電鑄鎳製程 36
3.3.1 電鑄設備 36
3.3.2 電鑄參數實驗 37
3.4 試片檢測 39
3.4.1 表面結構、機械性質檢測 39
3.4.2 材料特性檢測 40
3.4.3 電性量測 43
3.5 TSV高頻晶片 44
3.5.1 高頻晶片準備 44
3.5.2 高頻晶片封裝加工 45
第四章 結果與討論 49
4.1 雷射鑽孔實驗結果分析 49
4.1.1 雷射功率對鑽孔之影響 49
4.1.2 雷射焦距對鑽孔之影響 52
4.1.3 雷射加工次數對鑽孔之影響 53
4.1.4 雷射終止直徑對鑽孔之影響 54
4.2 電鑄實驗結果分析 58
4.2.1 電流效率實驗 58
4.2.2 不同電流密度片電阻值 62
4.2.3 電鑄填孔 64
4.3 測量分析 68
4.3.1 機械性質分析 68
4.3.2 材料特性分析 69
4.3.3 電性分析 72
4.4 高頻晶片封裝加工 74
4.4.1 封裝製程 74
4.4.2 高頻晶片頻率響應 75
第五章 結論與未來展望 77
5.1 結論 77
5.2 未來展望 77
參考文獻 79

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