Responsive image
博碩士論文 etd-0706101-155927 詳細資訊
Title page for etd-0706101-155927
論文名稱
Title
以光致螢光的方法對δ-doped之Ⅲ-Ⅴ族半導體之研究
Investigation ofδ-dopedⅢ-Ⅴ Semiconductor Quantum Well Using Photoluminescence
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
92
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2001-06-19
繳交日期
Date of Submission
2001-07-06
關鍵字
Keywords
次能帶、量子井、二維電子氣
δ-doped, quantum well, 2DEG
統計
Statistics
本論文已被瀏覽 5821 次,被下載 1314
The thesis/dissertation has been browsed 5821 times, has been downloaded 1314 times.
中文摘要
本文主要是以PL(Photoluminescence)光致螢光的方法來量測δ-doped之二維電子氣半導體量子井在低溫環境中的能階差。所使用的樣品為 AlAs0.56Sb0.44/Ga0.47In0.53As的二維電子氣半導體量子井材料。這個樣品有三個次能帶(subband)且其電子濃度隨著照光時間增加而增加。雖然這次實驗沒有觀察到樣品的Intersubband Transition,但我們對分光儀TRIAX320的操作與性能已了解通透。使我們未來可以更精準的量測到今後樣品的PL量測結果。
Abstract
We measure the energy gap of two-dimensional electron gas in AlAs0.56Sb0.44/Ga0.47In0.53As at low temperature by photoluminescence measurement. We intend to observe the intersubband transition in these samples, especially the first and second subband. We have discovered that the sample ( AlAs0.56Sb0.44/Ga0.47In0.53As ) has three subband by SdH and electron density will increase with illumination time. Although we did not observe the intersubband transition in the experiment, we did know the performance and controls about TRIAX320 monochrometer. It means we could measure the better result in further.
目次 Table of Contents
第一章 簡介
第二章 理論
第三章 實驗儀器與降溫步驟
第四章 PL 實驗系統裝置與架設
第五章 實驗結果與討論
參考文獻 References
Reference:
【1】C. Y. Lee, M. Z. Tridrow, K. K. Choi, W. H. Chang and L. F. Eastman, “Activation characteristics of a long wavelength infrared hot electron transistor”.

【2】Ikai lo, M. C. Mitchel, K. A. Harris, R. W. Yanka, L. M. Mohnkern, A. R. Reisinger and T. H. Myers, Apply. Phys. Lett. 62, 1533(1993).

【3】John H. Moore, Christopher C. Davis, Michael A. Coplan, “Building scientific apparatus second edition” (Addison-Wesley publishing company, inc.) pp271~286.

【4】W. C. Mitchel, G. J. brown, Ikai Lo, S. Elhamric, M. Ahoujja, K. Ravindran, R. S. Newrock, M. Razeghi and X. G. He, Apply. Phys. Lett. 65, 1578(1994)

【5】Ikai Lo, W. C. Mitchel, M. Ahoujja, J. -P. Cheng, A. Fathimulla and H. Hier, “Second subband population in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostrucyures”, Apply. Phys. Lett. 66, p. 754(1995)

【6】C. Weisbuch and Vinter, in “Quantum Semiconductor Structures”, pp.19-21(Academic Press, Inc., San Diego, 1991)

【7】Jacques I. Pankove, “Optical Processes in Semiconductors”, Dover Publications, Inc. New York(1975)

【8】A. J. Fischer, W. Shan, and J. J. Song, Apply. Phys. Lett. 71, p. 1981(1997)

【9】G. D. Chen, M. Smith, J. Y. Lin, and H. X. Jiang, J. Apply. Phys., 79, 2675(1996)

【10】Toshio Ogino and Masaharu Aoki, Jpn. J. Apply. Phys., 19, 2395(1980)

【11】D. Olego, T. Y. Chang, E. Silberg, E. A. Caridi, and A. Pinczuk, Apply. Phys. Lett. 41, p. 476(1982)

【12】Ikai Lo, J. -P. Cheng, Y. F. Chen, and W. C. Mitchel, J. Apply. Phys. 80, 3355(1996)

【13】郭桂冠 “ Magneto-Transport studies of δ-doped Ⅲ-Ⅴ semiconductor quantum wells”(1996)

【14】張晏瑲 “Transport studies of two-dimensional electron gas inδ-doped semiconductor quantum wells at ultra-low temperature and high magnetic field”(1997)

【15】李宜青 “Investigation of GaN using photoluminescence”(1998)

【16】李昆翰 “Investigation of GaN using photoluminescence”(1999)

【17】劉逸民 “Transport studies in ZnS0.06Se0.94/Zn0.8Cd0.2Se quantum well at low temperature and high magnetic field”(2000)
電子全文 Fulltext
本電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。
論文使用權限 Thesis access permission:校內校外完全公開 unrestricted
開放時間 Available:
校內 Campus: 已公開 available
校外 Off-campus: 已公開 available


紙本論文 Printed copies
紙本論文的公開資訊在102學年度以後相對較為完整。如果需要查詢101學年度以前的紙本論文公開資訊,請聯繫圖資處紙本論文服務櫃台。如有不便之處敬請見諒。
開放時間 available 已公開 available

QR Code