本文將討論以電漿輔助分子束磊晶方式在藍寶石基板上成長不同氮化鋁鎵/氮化鎵異質結構之樣品與其特性分析。在X 光繞射分析的檢測之下，利用控制不同鋁分子束通量可獲得氮化鋁鎵層之中鋁的含量分別約為0%、16%、31%。從掃瞄式電子顯微鏡與反射式電子繞射圖案的結果我們可以判定樣品表面為氮終結。微光致螢光分析方面，我們可以推得氮化鋁鎵的能隙彎曲係數約為1.38 eV。此外，利用改變不同氮化鋁鎵的結構，如鋁的百分比、未摻雜與摻雜矽的厚度、是否有覆蓋層等實驗，可由霍爾量測得知室溫載子移動率由8.2 cm2/Vs 提升至453 cm2/Vs，在液態氮溫度下可以達到796 cm2/Vs。

We will discuss the growth and characterization of AlxGa1-xN/GaN on sapphire substrate by plasma-assisted molecular beam epitaxy. By performing the X-ray diffraction (XRD) of our sample, we could control the fraction of Aluminum in about 0%, 16%, and 31% with varying the equivalent pressure of Aluminum. Under the investigation of field emission scanning electron microscopy (FESEM) and reflection high energy electron diffraction (RHEED) pattern, we can determinate the samples are N-polarity. The photoluminescence (PL) spectra show the bowing coefficient of AlGaN is about 1.38 eV. Furthermore, The Hall mobility could be improved from 8.2 cm2/Vs to 453 cm2/Vs or 796 cm2/Vs at room temperature or liquid nitrogen temperature respectively, after changing the structure of AlxGa1-xN, such as fraction of Aluminum, the thickness of i-AlxGa1-xN and n-AlxGa1-xN, and cap layer.

中文摘要.............................5
英文摘要.............................6
第一章 緒言..........................7
第二章 實驗..........................8
2.1 分子束磊晶系統...................8
2.2 實驗程序.........................9
2.2.1 基板規格.......................9
2.2.2 鍍熱導層.......................9
2.2.3 化學清洗.......................9
2.2.4 置入樣品.......................10
2.2.5 成長程序.......................11
2.2.6 取出程序.......................15
2.2.7 清理工作區域...................15
2.3 樣品成長參數.....................16
第三章 量測系統與原理................21
3.1 反射式高能電子繞射裝置...........21
3.2 掃瞄式電子顯微鏡.................21
3.3 X 光繞射分析.....................21
3.4 微光致螢光.......................23
3.5 霍爾量測.........................24
第四章 實驗結果與討論................26
4.1 反射式高能電子繞射裝置...........26
4.2 掃瞄式電子顯微鏡.................29
4.3 X 光繞射分析.....................31
4.4 微光致螢光.......................36
4.5 霍爾量測.........................38
4.6 綜合討論.........................41
第五章 結論..........................47
參考資料.............................48
附錄.................................50
一、霍爾量測基本原理.................50
二、Bede D1 高解析度X-ray 繞射儀操作程序..............52
三、Band structure of Wurtzite GaN by Bond-Orbital Model ................................................54

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