Title page for etd-0706104-164138


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URN etd-0706104-164138
Author Jiong-shun Huang
Author's Email Address No Public.
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Department Electrical Engineering
Year 2003
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title The Characteristics of GaSb on GaAs Grown by ALE-MBE
Date of Defense 2004-07-01
Page Count 82
Keyword
  • ALE
  • GaSb
  • MBE
  • Abstract This dissertation contains two parts which is included the Gallium antimony (GaSb) thin film and quantum dots grown by ALE-MBE process. The ALE-MBE technology was used to get better film quality and to control exactly the thickness of epitaxial layers for quantum dots growth. For the larger lattice mismatch, it will be carefully controlled the substrate temperature and V/III flux ratio based on the growth mechanism to obtain the high quality of GaSb films. After fully understanding the GaSb films growth, the characteristics of GaSb quantum dots such as the density and size could be controlled.
      The XRD, Raman and Photo-reflectance measurements were used for obtaining the optimum growth conditions of Gasb films shown at temperature; 500~520℃and the V/III flux ratio about 2.5~3. The formation of three dimensional GaSb islands on GaAs substrate is expected at the deposition of a critical number of GaSb monolayer, About 3.1 monolayer grown is the optimum growth condition, and samples were characterized by atomic force microscopy (AFM). In order to control the dots size, sharp and dots density, the growth mechanism were discussed by analyzing different growth parameters included the growth temperature, thickness of monolayer, growth interruption time (GRI), and capped layer in detail.
    Advisory Committee
  • Wei-zhou Xu - chair
  • Ai-na Hong - co-chair
  • Wan-quan Guo - co-chair
  • Qiu-bing Chen - co-chair
  • Heng-yi Weng - advisor
  • Files
  • etd-0706104-164138.pdf
  • indicate not accessible
    Date of Submission 2004-07-06

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