在IC封裝的可靠度與產率上，鋁銲墊是伴演著重要的角色。在此論文中，因銲針垂直張力的轉移可以清楚的知道直接驅動力量是造成銲墊剝離。因此連接銲墊時發生破裂時，是造成墊片剝離的主因。研究因驅動力量所造成的破裂，使用有限元素方法(FEA)，模擬超音波打線過程中的結合製程。研究的結果知道，藉由打線機制中的超音波功率，控制銲針的水平振動，會產生嚴重結合銲墊的破裂，破裂會延伸到晶片的氧化層中。
金線與鋁墊的結合退化是形成結合失敗的主要問題之一，這是因為低溫度安定性封膠樹脂(例如：Bi-phenyl環氧樹脂)與元件常使用在高溫度環境下緣故。bi-phenyl環氧樹脂的結合失敗生命期是比cresol novolac環氧樹脂還要短的。而造成失敗現象的發生是因為腐蝕的反應發生，而造成此反應是因為Au-Al的介金屬化合物(intermetallic)與封裂樹脂中的溴產生反應而造成腐蝕。它清楚的反應於結合介面中的介金屬化合物intermetallic)相中的Au4Al phase。
另外，利用SEM /AES /EDS和XPS技術，可以了解鋁層下的缺陷並加以顯示與確定。當鋁墊上的污染，可能會引起金屬間化合物不良的成長，將導致失敗或者造成不確時的連接於外面的晶片。

Aluminum bond pads on semiconductor chips play an important role in IC device reliability and yield. In the paper, the vertical tension loading transferred from the capillary is clarified as the direct driving force for bond pad metal peeling. The crack on the bonding pad is identified as the root cause of the pad peeling. It is simulated by finite element method to find the effect of driving force resulting in the crack during the ultrasonic wire bonding process. It indicated that the horizontal vibration of the capillary controlled by ultrasonic power of the bonding machine was the main factors led to the crack on the bonding pad as well as its propagation into the oxide layers in chip.
The degradation of Au wire/Al bond pad has become a major bonding failure problem. It is because that the molding resin with low thermal stability (e.g. bi-phenyl epoxy resin) and the IC devices under high thermal environments were used in packaging process. For the lifetime to bond failure, the bi-phenyl epoxy molding becomes shorter than that for cresol novolac epoxy due to the corrosion reaction of Au-Al intermetallics with bromine (Br) contained in the resin compounds. It was clarified that the reactive intermetallic was Au4Al phase formed in the bond interface.
In addition, by utilizing the SEM, AES, EDS and XPS techniques, it could be carried out to reveal and identify defects underneath Al layer, and the contaminated Al bond pads could cause poor intermetallic growths led to the failed or unreliable connections from the chip to the outside world.

附表目錄…………………………………………………………………I
附圖目錄………………………………………………………………II
第一章 序論……………………………………………………………1
1-1 IC封裝簡介………………………………………………………2
1-1-1 封裝的技術層級區分…………………………………………2
1-1-2 IC封裝的發展…………………………………………………2
1-2 IC封裝製程說明…………………………………………………3
1-3 打線製程的技術與發展………………………………………4
1-3-1超音波接合……………………………………………………4
1-3-2熱壓接合的過程………………………………………………4
1-3-3熱超音波接合…………………………………………………5
1-3-4 TAB技術………………………………………………………5
1-3-5 先進覆晶接合………………………………………………5
1-3-5-1 銲錫凸塊的製作………………………………………6
1-4本文各章節之介紹………………………………………6
第二章 打線製程步驟與檢測儀器………………………………7
2-1 打線製程步驟……………………………………………………7
2-2 檢測儀器……………………………………………………7
2-2-1 掃瞄式電子顯微鏡(SEM)………………………………………8
2-2-1-1掃瞄式電子顯微鏡(SEM)結構說明……………………8
2-2-2 歐傑電子能譜儀分析(AES)…………………………………10
2-2-2-1歐傑電子能譜儀分析(AES)工作原理…………………10
2-2-2-2歐傑電子能譜儀分析(AES)結構示意圖………………11
2-2-3能量散佈光譜儀(EDS)………………………………………12
2-2-3-1能量散佈光譜儀(EDS)工作原理………………………12
2-2-3-2能量散佈光譜儀(EDS)的優點…………………………12
2-2-3-3能量散佈光譜儀(EDS)的缺點…………………………13
第三章 打線失敗機制分析………………………………………14
3-1外在環境中的腐蝕物質形成打線失敗機制………………15
3-1-1鋁銲墊腐蝕對打線連接失敗的重要性……………………15
3-1-2腐蝕產生之程序……………………………………………16
3-2金屬間化合物其孔洞形成對打線失敗的影響……………17
3-2-1 Wire bond 接點微結構分析…………………………………17
3-2-2 Au-Al介金屬化合物(intermetallic)生成孔洞受力分析.19
3-2-3介金屬化合物(intermetallic)孔洞成長觀察……………24
3-3封裝材料所造成打線腐蝕及氧化機制…………………25
3-3-1封模膠餅的組成分析…………………………………………25
3-3-2封裝樹脂對金鋁微接點的影響………………………………27
3-4銲墊表面污染而造成打線失敗……………………………28
3-4-1銲墊(bondpad)表面清理……………………………………28
3-4-2銲墊的分析……………………………………………………28
3-4-3研究內容………………………………………………………28
3-5連接能量所造成打線失敗的影響………………………29
3-5-1材料定義………………………………………………………29
3-5-2熱超音波接合(Thermosonic Bonding，T/S)問題…………30
3-5-3機械接觸方程…………………………………………………30
3-5-4 ANSYS分析處理………………………………………………32
3-5-4-1 ANSYS流程定義…………………………………………32
3-5-4-2銲墊結構各層應力分析…………………………………32
3-6實驗方法…………………………………………………34
3-6-1 試片…………………………………………………………34
3-6-2 時效處理……………………………………………………34
3-6-3 試片分析……………………………………………………35
3-6-4 物性分析……………………………………………………35
3-6-4-1將試片做切面檢驗(cross section)之分析…………35
3-6-4-2翻球試片分析…………………………………………36
3-6-5化性分析……………………………………………………36
3-6-5-1腐蝕產物之成份分析…………………………………36
3-6-5-2腐蝕離子來源之探討…………………………………36
3-6-6水氣傳遞途徑之証明…………………………………………36
第四章 結果討論與結論…………………………………………38
4-1腐蝕物質對金鋁微結構產生的影響……………………38
4-2金屬間化合物形成孔洞對金鋁微接點的影響……………40
4-3封裝樹脂對金鋁微結構的影響………………………………41
4-4連接能量所造成打線失敗分析………………………………43
4-5銲墊表面污染分析………………………………………45
第五章 結論……………………………………………………………47
參考文獻………………………………………………………………95

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