我們使用Shubnickove-de Hass (SdH)量測來研究 InxGa1-xAs/ In0.52Al0.48As的電子特性。銦的含量變數(x)隨著不同的量子井結構改變從0.5到0,56，我們的樣品的量子井結構；Sample A的結構為最簡單方形量子井“In0.53Ga0.47As”；Sample B是漸變式分段限制異質結構“In0.56Ga0.44As/In0.53Ga0.47As/In0.5Ga0.47As”； Sample C的結構是參數x線性的慢慢減少，由In0.56Ga0.44As線性的慢慢減少至In0.5Ga0.5As；Sample D的結構為參數x是線性的慢慢增加，由In0.5Ga0.5As線性的慢慢增加到In0.56Ga0.44As。在這些樣品中因為電子存在於最低的兩個subband所以我們可以觀察到兩個SdH橫向電阻的震盪。為了觀察這兩個subband的電子特性，我們也使用Ven der Pauw Hall量測方法。從SdH與Hall這兩種量測方法，我們可以得到在這些樣品的兩個subband中的電子遷移率跟載子濃度。

We have studied the electronic properties of InxGa1-xAs/
In0.52Al0.48As quantum wells by using Shubnickove-de Hass (SdH) measurement. The indium composition (x) of well layers was varied from 0.5 to 0.56 whit different structures, such as sample A is simply “In0.53Ga0.47As”, sample B is a step-well like“In0.56Ga0.44As/In0.53Ga0.47As/In0.5Ga0.47As”,sample C is linearly graded well is a opposite way“In0.56Ga0.44As down to In0.5Ga0.5As, and sample D is linearly graded well “In0.5Ga0.5As up to In0.56Ga0.44As.” It was found that the two SdH oscillations beat each other due to the population of the lowest two subbands in these samples. In order to investigate the electronic properties of the two subbands, we have done the Ven der Pauw Hall measurement . From SdH and Hall measurement, we are able to determine the individual mobility and carrier concentrations for two-subband-populated samples.

第一章簡介...............................................1
1-1 前言.................................................1
1-2 InGaAs/InAlAs/InP 材料的介紹.........................3
第二章理論部分...........................................6
2-1 量子井二維電子氣的電子特性...........................8
2-2 正持續光導效應(PPC)及負持續光導效應(NPPC) ..........11
第三章實驗部分..........................................15
3-1 樣品結構............................................15
3-2 SdH 量測實驗........................................22
3-3 T-depdendent Hall 量測實驗..........................25
第四章實驗結果與討論....................................28
4-1 Shubnikov-de Haas 量測的討論........................28
4-2 T-dependent Hall 量測的討論.........................32
第五章結論..............................................37
References..............................................56

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