此論文將研究以電漿輔助分子束磊晶成長應用於自旋電子學與光電子學之氮化鎵系列薄膜及其特性分析。

在自旋電子學領域，我們在氮化鎵磊晶片上藉由分子束磊晶系統成長不同鋁含量之氮化鋁鎵/氮化鎵高電子遷移率電晶體並探討其表面、結構及電子傳輸等特性。藉由高品質磊晶，在4K溫度下，鋁含量為0.14及0.21的氮化鋁鎵/氮化鎵異質結構中，我們可獲得相當高的電子遷移率，在鋁含量為0.14的樣品中，電子遷移率可達20448 cm-2/Vs，其二維電子氣載子濃度為 。藉由變溫霍爾量測而得到的電子遷移率曲線可分析不同鋁含量樣品在二維電子氣中電子傳輸所受的散射機制。我們進一步將鋁含量為0.18的樣品製作為奈米線元件，並且得到在200奈米及100奈米線寬下的元件中可分別量測到2.4與1.2毫電子福特的自旋分裂。由此結果，我們引入一維彈道傳輸奈米線、自旋霍爾效應以及A-B效應而提出新式的自旋霍爾量子環干涉元件以克服傳統自旋電晶面臨的難題。

在光電子學領域中，我們可在鋁酸鋰基板上成長氮化鎵微結構。氮化鎵微結構可進一步分為薄形微米碟、釘狀及菇狀結構。我們對氮化鎵微結構做光學分析，並且驗證在氮化鎵微結構中的斜面，也就是半極性面中，有優於極化面中的發光表現。另外，我們也利用低溫微光致螢光量測探討在不同形狀的微結構中的發光躍遷機制。在以分子束磊晶系統成長氮化鎵於(100)方向矽基板的系列中，我們展示了不同面向的成長能夠藉由濺鍍的氮化鋁緩衝層所控制。而在特定成長參數下，可得到纖維鋅礦/閃鋅礦的相轉變。對於發光二極體元件，我們藉由分子束磊晶亦可得到高品質氮化銦鎵/氮化鎵多重量子井結構，並探討量子井及位障在不同成長溫度和不同成長厚度下的結構及發光表現。

In this dissertation, we studied the growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application.

In the spintronics applications, the AlxGa1-xN/GaN HEMT samples with varied Al composition were grown by plasma-assisted molecular beam epitaxy on GaN template. The surface morphology, structural properties and electronic properties were characterized. We obtained the highest mobility and lowest carrier concentration to be 20448 cm-2/Vs and in Al0.14Ga0.86N/GaN sample at 4K. Besides, Al0.210Ga0.790N/GaN sample with higher Al content also has great mobility as high as Al0.14Ga0.86N/GaN sample. The scattering mechanism of 2DEG transport was evaluated by temperature-dependent mobility curves. The Al0.18Ga0.82N/GaN HEMT was used to fabricate the nano-wires. The spin-splitting was obtained to be (2.4±0.3) meV and (1.2±0.3) meV for 200 nm nano-wire and100 nm nano-wire, respectively. According the result, we proposed a quantum-ring interferometer by introducing the concept of 1-D ballistic transport nano-wire, spin-Hall effect and A-B effect.

In the optoelectronic applications, we have characterized the optical properties of GaN microstructures in the shapes of microdisk, nail, and mushroom. We demonstrated that the superior luminance efficiency was observed on the oblique surfaces of mushroom-shaped GaN. Beside, the band transition mechanism of thin disk, nail-shaped and mushroom-shaped GaN was performed by low-temperature micro-PL. Moreover, we have grown the GaN layers by MBE on Si (100) substrates with sputtered AlN buffer layer. We showed with TEM images that variant kinds of GaN epitaxial planes can be grown with sputtered AlN on Si (100) substrate. It was found that zinc-blende GaN can be obtained via phase transition under certain growth condition. For LED application, the high quality InGaN/GaN MQWs has been grown by PA-MBE on GaN template.

Table of contents

Verification Letter (論文審定書) i

Acknowledgements (誌謝) ii

Chinese Abstract (中文摘要) iii

English Abstract iv

List of figures vii

List of tables xii

1. Introduction 1
1.1 Spintronics applications 1
1.2 Optoelectronics applications 5

2. AlxGa1-XN/GaN HEMT structures grown by PA-MBE on GaN template 9
2.1 Background 9
2.2 Growth procedure 12
2.3 Characterization of AlxGaN1-xN/GaN with various Al compositions 14
2.4 Summary 33

3. AlxGa1-XN/GaN nano-wires and AlxGa1-XN/GaN quantum-ring interferometer 35
3.1 Background 35
3.2 Fabrication process of AlxGa1-XN/GaN nano-wires 37
3.3 SdH measurement of AlxGa1-XN/GaN nano-wires 40
3.4 AlxGa1-XN/GaN quantum-ring interferometer 45
3.5 Summary 51

4. Luminescence properties of GaN microstructures grown on LiAlO2 substrate 53
4.1 Background 53
4.2 Cathodoluminescence properties of GaN microstructures 57
4.3 Photoluminescence properties of GaN microstructures 62
4.4 Summary 67

5. Growth of wurtzite and zinc-blende phased GaN on silicon (100) substrate with sputtered AlN buffer layer 69
5.1 Background 69
5.2 Experiments 71
5.3 Results and discussion 73
5.4 Summary 87

6. InGaN/GaN multiple quantum wells grown by PA-MBE on GaN template 89
6.1 Background 89
6.2 Growth procedure 90
6.3 Characterization of InGaN/GaN MQWs 93
6.4 Summary 100

7. Conclusions and future works. 101

Reference 105

Publication List 115

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