本篇論文提出一系列非晶矽/非晶矽鍺結構太陽能電池(a-Si:H/a-SiGe Solar Cell)，是將非晶矽鍺插入於傳統平面非晶矽PIN太陽能電池的不同接面中而形成了「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / n-a-Si:H」、「p-a-Si:H / i1-a-Si:H / i2-a-SiGe / n-a-Si:H」、「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / i3-a-SiGe / n-a-Si:H」以及「p-a-Si:H / i1-a-Si:H / i2-a-SiGe / i3-a-Si:H / n-a-Si:H」等新太陽能電池結構。針對傳統平面非晶矽太陽能電池而言，由於其非晶矽能隙比較大(1.7~1.9 eV)且有較強的光吸收係數等優點，可以將其吸收層厚度做得比較薄進而減少成本，非常適合於可攜式物品或其他產品的整合上。但也因為非晶矽的高能隙，造成在長波段區域的光無法被有效吸收，轉換效率也就無法進一步的被提升。為了要增加其在長波長的吸收，我們將其分別插入了一層或兩層非晶矽鍺，因為非晶矽鍺擁有較窄的能隙(1.1~1.7 eV)，可以對長波段的光進行較有效地進行吸收，並且可產生較多的載子以提升短路電流密度(Current Density, Jsc)，進而提升了轉換效率。此新設計的非晶矽/非晶矽鍺異質接面太陽能電池都有明顯比傳統的非晶矽太陽能電池高的電流密度。同時，此新非晶矽/非晶矽鍺太陽能電池的轉換效率可以高達16.29 %，這是目前薄膜太陽能電池所能達到的最高轉換效率。另外，為了要再次提升轉換效率，我們將「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / i3-a-SiGe / n-a-Si:H」太陽能電池結合了柱狀陣列結構，並使用模擬軟體進行最佳化的設計，結果我們發現在相同的太陽能電池結構下，此柱狀陣列結構相較於平面結構可再提升約4.76 %的轉換效率。

In this paper, we propose a series of amorphous silicon (a-Si) and amorphous silicon germanium (a-SiGe) heterojunction solar cells. The a-SiGe is inserted into the different junction of the conventional planar a-Si PIN solar cells thus the new different structures of solar cell,「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / n-a-Si:H」、「p-a-Si:H / i1-a-Si:H / i2-a-SiGe / n-a-Si:H」、「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / i3-a-SiGe / n-a-Si:H」and 「p-a-Si:H / i1-a-Si:H / i2-a-SiGe / i3-a-Si:H / n-a-Si:H」 are formed. Concerning that the conventional a-Si:H p-i-n structure has the high energy gap (1.7~1.9 eV) and high absorption coefficient,, the absorption layer thickness thus can be reduced for further reducing the cost. However, the high energy gap of a-Si:H cannot absorb long-wavelength of light so that the power conversion efficiency cannot be improved. In order to increase the long-wavelength absorption, we insert one or two layers of a-SiGe absorption layers into the conventional PIN counterpart due to the narrow energy gap (1.1~1.7 eV) of a-SiGe. The long-wavelength light can thus be more effectively absorbed and generate more carriers to increase the short-circuit current density (JSC). Therefore, the power conversion efficiency can be enhanced dramatically. The new designed a-Si/a-SiGe heterojunction solar cells improve short current density much significantly than conventional amorphous silicon solar cells do. Moreover, the power conversion efficiency of the new designed a-Si/a-SiGe solar cell is 16.29 %, which is achieved for the thin film solar cell up to now. Furthermore, for the purpose of enhancing the power conversion efficiency, we combine the 「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / i3-a-SiGe / n-a-Si:H」 structure and the pillared array structure to optimize the design by using TCAD software. The results indicate that under the same solar cell structure, the pillared array structure has a higher power conversion efficiency which is 4.76 % more than that of the planar structure stated above.

論文審定書.....................................................................................................................i
英文論文審定書............................................................................................................ii
致謝...............................................................................................................................iii
摘要...............................................................................................................................iv
Abstract..........................................................................................................................v
目錄 vi
圖次 ix
第一章、導論 1
1.1 背景 1
1.2 文獻回顧 3
1.3 動機 9
第二章、元件設計與模擬 11
2.1 矽鍺異質接面薄膜太陽能電池模擬 11
2.1.1 模擬之物理模型 11
2.3氫化非晶矽/矽鍺太陽能電池 (a-Si:H/a-SiGe) 15
2.3.1「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / n-a-Si:H」太陽能電池 (Cell A) 15
2.3.2「p-a-Si:H / i1-a-Si:H / i2-a-SiGe / n-a-Si:H」太陽能電池 (Cell B) 23
2.3.3「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / i3-a-SiGe / n-a-Si:H」太陽能電池 (Cell C) 29
2.3.4「p-a-Si:H / i1-a-Si:H / i2-a-SiGe / i3-a-Si:H / n-a-Si:H」太陽能電池 (Cell D) 33
2.4最佳化薄膜太陽能電池比較 37
2.5柱狀陣列結構太陽能電池 42
第三章、製程結果與討論 46
3.1異質接面太陽能電池製程 46
3.2平面薄膜太陽能電池製程與光罩設計 46
3.3 平面薄膜太陽能電池製程結果與討論 49
3.3.1 傳統非晶矽薄膜太陽能電池量測 50
3.3.2「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / n-a-Si:H」太陽能電池量測 52
3.3.3「p-a-Si:H / i1-a-Si:H / i2-a-SiGe / n-a-Si:H」太陽能電池量測 54
3.3.4「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / i3-a-SiGe / n-a-Si:H」太陽能電池量測 56
3.4柱狀陣列太陽能電池製程與光罩設計 60
第四章、結論與未來展望 63
4.1結論 63
4.2未來展望 64
參考文獻 65
附錄A 72
光電效應 72
光伏特效應 73
太陽光譜 74
太陽能電池原理 74
太陽能電池的電性參數 75
光學特性探討 79
外部量子效率 79
內部量子效率 79
復合機制 79
蕭克力萊德霍爾復合(SRH recombination) 80
輻射復合(Radiative Recombination) 81
歐傑復合(Auger recombination) 82
氫化非晶矽太陽能電池原理 83
附錄B. 個人獲獎 84

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