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博碩士論文 etd-0706115-135844 詳細資訊
Title page for etd-0706115-135844
論文名稱
Title
以雙壓電層研製薄膜體聲波元件之特性探討
Fabrication and characteristics of thin film bulk acoustic resonator device using double piezoelectric layers
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
108
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2015-07-27
繳交日期
Date of Submission
2015-08-06
關鍵字
Keywords
雙壓電層、薄膜體聲波元件、蝕刻、氮化鋁、氧化鋅
Dual piezoelectric layers, TFBAR, ZnO, AlN, Etch
統計
Statistics
本論文已被瀏覽 5769 次,被下載 39
The thesis/dissertation has been browsed 5769 times, has been downloaded 39 times.
中文摘要
本研究以雙壓電層:ZnO/AlN結構來研製薄膜體聲波元件,先以雙靶直流濺鍍系統沉積晶種層Ti與電極Pt來定義出電極,再以射頻磁控濺鍍法來濺鍍AlN薄膜與ZnO薄膜,接著以掃描式電子顯微鏡與X光繞射儀來量測薄膜之物性,並定義出最佳化參數。最後,利用舉離法定義出電極並以兩階段蝕刻方式,完成雙壓電層之薄膜體聲波元件。
本研究結果發現經由AlN作為底層能夠有效提升聲波波速,進而提升共振頻率;藉由厚度調變可產生之高頻共振頻率為3.04GHz,最後藉由改善損耗之方式更可提升至3.45GHz。
Abstract
In this study, using the structure of dual piezoelectric layers:ZnO/AlN to fabricate the thin film bulk acoustic resonator (TFBAR).First seeding layer-titanium (Ti) and bottom electrode-platinum (Pt) were deposited by DC sputtering of a dual gun system.And then The piezoelectric thin films:AlN thin films and ZnO thin films were deposited by the RF reactive magnetron sputtering.To define the best parameters of the growth of piezoelectric AlN thin films and piezoelectric ZnO thin films using the X-ray diffraction and scanning electron microscopy.Finally, the dual piezoelectric layers thin film bulk acoustic resonator (TFBAR) were fabricated by using the photolithographymethod to define the electrode and two-step ecth.
The result shows that AlN thin films can promote the acoustic velocity to promote the resonance frequency.The resonance frequency of tthin film bulk acoustic resonator (TFBAR) is 3.04GHz.Finally,by the method of reduce loss,the resonance frequency can be promoted to 3.04GHz.
目次 Table of Contents
摘要 iii
目錄 v
圖目錄 ix
表目錄 xiv
第一章 前言 1
1-1 研究背景 1
1-2 薄膜體聲波濾波器簡介 3
1-3 研究動機 7
1-4 研究內容 7
第二章 理論分析 8
2-1 壓電理論 8
2-2 壓電效應 9
2-3 壓電材料 11
2-4 體聲波之傳遞方式 12
2-5 氮化鋁之特性與結構 13
2-6 氧化鋅之特性與結構 17
2-7 薄膜沈積原理 19
2-7-1 薄膜沉積現象 19
2-7-2 薄膜表面與截面結構 21
2-8 反應性射頻磁控濺鍍原理 22
2-8-1 輝光放電 23
2-8-2 磁控濺鍍 24
2-8-3 射頻濺鍍 26
2-8-4 反應性濺鍍 27
2-9 矽基板蝕刻 28
2-9-1 非等向性濕式蝕刻 28
2-9-2 乾式蝕刻 31
2-10 FBAR之架構及原理 33
2-11 FBAR之參數性質 34
2-11-1 機電耦合係數(Electromechanical Coupling Coefficient, kt2) 34
2-11-2 品質因子(Quality factor, Q) 35
第三章 實驗流程與步驟 36
3-1 實驗流程 36
3-2基板清洗 38
3-3 薄膜沉積 39
3-3-1 射頻磁控濺鍍系統 39
3-3-2 直流磁控濺鍍系統 43
3-4 蝕刻製程 45
3-5 黃光微影製程 46
3-6 掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)分析 47
3-7 X光繞射(X-Ray diffraction, XRD)分析 48
3-8 雙壓電層FBAR之製作流程 51
3-8-1 以LPCVD沉積Si3N4 52
3-8-2 製作底電極 52
3-8-3 製作壓電層 53
3-8-4 製作上電極 53
3-8-5 兩階段蝕刻矽基板 53
3-9 雙壓電層FBAR元件測量 53
第四章 結果與討論 55
4-1 氮化鋁薄膜之物性分析 55
4-1-1 調變濺鍍功率 55
4-1-2 調變濺鍍壓力 59
4-2 氧化鋅薄膜之物性分析 63
4-2-1 調變濺鍍壓力 63
4-2-2 調變濺鍍功率 67
4-3 ZnO/AlN/Pt/Ti/Si3N4/Si結構 71
4-4 蝕刻空腔探討 72
4-4-1 濕蝕刻 72
4-4-2 乾蝕刻 74
4-5 頻率響應 76
4-5-1 背部空腔殘餘矽對頻率之影響 76
4-5-2 調變厚度比之頻率響應變化(固定氮化鋁厚度為0.8 μm) 78
4-5-3 改善損耗 81
第五章 結論 83
參考文獻 84
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