本論文利用反應性射頻磁控濺鍍法在Si基板上製備氧化鋅(ZnO)薄膜，並得到最佳螢光薄膜的濺鍍條件為氧氣濃度21%、濺鍍功率100W、基板溫度500℃、濺鍍壓力5mtorr，最後並透過熱處理來改善氧化鋅薄膜之發光特性。
在物性研究方面，藉由XRD及SEM分析，探討氧化鋅薄膜於不同濺鍍參數下沉積所得的結果，並討論其發光特性及材料特性。在光學性質方面，亦藉由紫外線光譜儀以及光致螢光光譜儀，分析在不同濺鍍參數下所得的薄膜，其可見光穿透率及光激發光特性。
由實驗結果得知，在濺鍍參數最佳化的條件下，薄膜隨著XRD之半高寬越小(即晶粒越大)，紫外光的發光強度越強。另外，在氮氣氛下，經800℃熱處理後，發現薄膜的紫外光特性為最佳；而在氧氣氛下，經800℃熱處理，可獲得較佳的可見光(綠光)特性。

In this study, the reactive rf magnetron sputtering was used to deposit zinc oxide (ZnO) thin films on Si substrate. The optimal sputtering parameters for film as luminescence application were found to be oxygen concentration (O2/O2+Ar) of 21%, RF power of 100W, substrate temperature of 500°C and sputtering pressure of 5 mtorr. Beside, the thermal treatment procedure was carried out to improve the luminescence characteristics of ZnO thin films.
The physical characteristics of ZnO thin films deposited on Si substrate with different sputtering parameters were obtained by the analyses of XRD and SEM. The optical properties of ZnO thin films were discussed also. Ultraviolet (UV) visible spectrometer and photoluminescence spectrometer were used to measure the visible transmission and photoluminescence characteristics (PL), respectively.
According to the experimental results, it is found that under optimal sputtering parameters, the emitted UV light intensity will be increased as the FWHM in x-ray diffraction is decreased, i.e. the grain size is larger. In addition, after post-deposition annealing at 800℃, the strongest UV emission intensity was obtained in the nitrogen ambient and the strongest visible (green) emission intensity was obtained in the oxygen ambient.

摘要 I
目錄 III
圖表目錄 VI
第一章 前言 1
第二章 理論分析 5
2.1 場發射顯示器 5
2.1.1 場發射原理及構造 5
2.1.2 場發射射出理論 6
2.2 發光 7
2.2.1 發光之簡介 7
2.2.2 發光機制 9
2.2.3 發光中心之種類與原理 10
2.3 螢光材料 12
2.3.1 螢光材料之簡介 12
2.3.2 螢光材料的種類與應用 13
2.4 氧化鋅薄膜 16
2.4.1 氧化鋅之簡介 16
2.4.2 氧化鋅薄膜的發光機制 17
2.4.3 氧化鋅薄膜的光學性質 19
2.5 薄膜沉積原理 20
2.5.1 沉積現象 20
2.5.2 薄膜表面及截面結構 21
2.6 反應性射頻磁控濺鍍原理 21
2.6.1 直流輝光放電 21
2.6.2 磁控濺射 22
2.6.3 射頻濺射 22
2.6.4 反應性濺射 23
第三章 實驗 24
3.1 矽基板的清洗方法 24
3.2 濺鍍系統與薄膜沉積 25
3.3 X光繞射(X-Ray Diffraction, XRD)分析 26
3.4 掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)分析 27
3.5 光致螢光光譜儀(Photoluminescence Spectrometer, PL)分析 27
3.6 紫外線光譜儀(Ultraviolet Visible Spectrometer, UV-Vis)分析 29
第四章 結果與討論 30
4.1 射頻濺鍍ZnO薄膜之材料特性分析 30
4.1.1 氧氣濃度之影響 30
4.1.2 濺鍍功率之影響 32
4.1.3 基板溫度之影響 32
4.1.4 濺鍍壓力之影響 33
4.2 掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)分析 34
4.3 氧化鋅薄膜光學性質分析 35
4.4 濺鍍參數對Photoluminescence(PL)之影響 36
4.4.1 氧氣濃度之影響 36
4.4.2 濺鍍功率之影響 37
4.4.3 基板溫度之影響 37
4.4.4 濺鍍壓力之影響 37
4.5 熱處理對Photoluminescence(PL)之影響 38
第五章 結論 41
參考文獻 43

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