在電子封裝中，錫球接點是最容易產生缺陷的地方，無鉛材料接點比起含鉛材料接點來的硬且脆，容易在動態負荷下因為吸收衝擊能量的因素而斷裂，造成電子元件的失效，如何提升無鉛接點在動態負荷下的可靠度便成為相當熱門的研究方向。
本研究將根據JEDEC Standard JESD22 - B111 ”Board Level Drop Test Method of Components for Handheld Electronic Products”以及JESD22 – B110 “Subassembly Mechanical Shock” 使用掉落試驗機在1500G的衝擊環境之下作SnAgCu、SnCu以及SnAg合金可靠度測試，並以63Sn37Pb合金作比較；並利用顯微鏡以紅染料實驗進行失效分析，觀察裂縫分佈情形。
由實驗後的結果配合韋伯分析作進一步的平均失效時間MTTF預測時，發現63Sn37Pb錫球之預期壽命為152.52次，而比63Sn37Pb錫球高的材料有Sn0.7Cu、Sn2.6Ag0.5Cu以及Sn3.0Ag0.5Cu錫球，其平均失效時間分別為355.32次、295.82次以及289.54次；尤其是Sn0.7Cu合金，預期壽命是SnPb合金錫球的2.3倍，而三者中平均失效時間最小的Sn3.0Ag0.5Cu合金預期壽命也是SnPb合金的1.89倍，也就是說在同為1500G的衝擊環境下，當錫球材料為Sn0.7Cu、Sn2.6Ag0.5Cu以及Sn3.0Ag0.5Cu時，對於抵抗衝擊的能力皆比當前常用的63Sn37Pb合金強。
經由失效分析後發現錫球裂縫生成位置集中在介金屬化合物IMC（Intermetallic Compound）上，並且也發現封裝體錫球接點的失效位置多集中在外圍角落處，並由外向內分佈，這是因為在掉落過程中封裝體外圍的錫球，尤其是角落區域，因邊界效應而承受較大的應力以及累積較多的應變能所致。

Solder joints are the most fragile parts in electronic package. The properties of joints made of lead-free material are harder and crisper than those of lead-contained material. They tend to break due to dynamic loading by absorbing the impact energy and result in malfunction. Thus, how to improve the reliability of contact joints made of lead-free material in dynamic loading has become an important topic for research.

This work is based on JEDEC Standard JESD22 - B111 “Board Level Drop Test Method of Components for Handheld Electronic Products,” and JESD22 – B110 “Subassembly Mechanical Shock”. The setup of drop test apparatuses was used to conduct dropping tests with the impact of acceleration 1500 G, in order to acquire the reliability of SnAgCu, SnCu, and SnAg alloy, which would be compared with 63Sn37Pb. The specimens would be red-dyed for an analysis under SEM to examine the distribution of the breakage.

The results were analyzed by Weibull distribution to predict Mean Time to Failure (MTTF), it is revealed that MTTF of solder joints made of Sn0.7Cu, Sn2.6Ag0.5Cu, and Sn3.0Ag0.5Cu (MTTF=355.32, 295.82, 289.54 cycles respectively) are longer than that made of 63Sn37Pb (MTTF=152.52 cycles). Notably, MTTF of alloy Sn0.7Cu is 2.3 times of solder joints of SnPb. Alloy Sn3.0Ag0.5Cu has the shortest MTTF among the three, which is also 1.89 times of alloy SnPb. That is to say, under impact of 1500G, solder joints made of Sn0.7Cu, Sn2.6Ag0.5Cu, and Sn3.0Ag0.5Cu possess greater resistance to shock than alloy 63Sn37Pb, which is in common by used at present.

In addition, the breakage of solder joints mainly generated on Intermetallic Compound (IMC) and around the four corners, distributed from the periphery to the central area. Especially, those on the corners receive greater stresses due to edge effect.

目錄
目錄…..…………………………………………………………………I
表目錄………………………………………………………………...IV
圖目錄…………...……………………………………………………..V
中文摘要………...……………………………………………………IX
Abstract………...……………………………………………………...XI
第一章 緒論…….……………………………………………………...1
1-1 研究動機與目的…..……………………………………………1
1-2 文獻回顧...…………..…….…...…………………….…………2
1-3 組織與章節…………………..…………………………………4
第二章BGA封裝技術、衝擊原理及規範介紹………………………..6
2-1 微電子封裝簡介…..……………………………………………6
2-2 球柵陣列封裝簡介………..…….…………..………………….9
2-2-1 BGA的定義……………………………………………….10
2-2-2 BGA之分類……………………………………………….10
2-2-3 BGA的優異性…………………………………………….11
2-3 JEDEC Standard 衝擊規範介紹………………………………12
2-4 可靠度判定………………..…………………………………..14
2-4-1 Weibull分佈簡介…………..……………………………...14
2-4-2 故障種類以及Weibull之物理意義………..…………….18
第三章 實驗工作……………………………………………………..31
3-1 實驗規劃與流程.……..……………………………………….31
3-2 實驗用試片介紹………………………………………………32
3-2-1 實驗晶片介紹…………………………………………….32
3-2-2 實驗測試板介紹………...…….………………………….33
3-3 實驗前置工作…..……….…………………………………….34
3-3-1 表面黏著技術設備介紹………………………………….35
3-3-2 表面黏著技術之作業流程……………………………….36
3-4 掉落衝擊實驗…..……………………………………………..38
3-4-1 掉落衝擊實驗儀器設備介紹…………….………………38
3-4-2 實驗說明………………………………………………….39
3-4-3 實驗條件………………………………………………….41
3-4-4 實驗流程………………………………………………….42
3-5 後續分析作業…………………………………………………43
3-5-1 紅染料分析試驗………………………………………….43
3-5-2 掃描式電子顯微鏡分析………………………………….45
第四章 實驗結果……………………………………………………..65
4-1 掉落循環失效分析……………………………………………65
4-2 紅染料失效模式分析…..……………………………………..66
4-2-1 失效模式定義…………………………………………….66
4-2-2 失效模式分析結果……………………………………….67
4-3 可靠度分析……………………………………………………67
4-4 SEM電子顯微鏡觀察分析……………………………………69
第五章 實驗結果之討論……………………………………………..93
5-1 掉落循環失效結果討論………………………………………93
5-1-1 失效次數討論…………………………………………….93
5-1-2 試片上晶片黏結位置對於可靠度的影響討論………….93
5-2 失效模式分析結果討論………………………………………94
5-3 可靠度分析……………………………………………………94
5-4 SEM電子顯微鏡觀察結果討論………………………………95
第六章 綜合結論與未來展望………………………………………..96
6-1 綜合結論………………………………………………………96
6-2 未來展望及建議事項…………………………………………97
參考文獻………………………………………………………………98















表目錄
表2-1 JEDEC衝擊試驗條件…………………………………………20
表2-2 測試板各層成分………………………………………………20
表2-3 測試板之機械性質……………………………………………21
表2-4 測試板銲墊及Solder Mask Opening規格……………………21
表2-5 測試板幾何尺寸與封裝體搭載位置圖………………………22
表3-1 實驗試片分組及錫球成份規格表……………………………46
表3-2 測試板機械性質一覽…………………………………………46
表3-3 測試板銲墊尺寸表……………………………………………47
表3-4 實驗衝擊條件JEDEC Standard JESD22-B110 Condition B..…………………………………………………………….47
表4-1 晶片初始電阻值………………………………………………70
表4-2 失效次數紀錄 SUF-1 to SUH-1..…………………………….71
表4-3 失效次數紀錄 SUH-2 to SUR-1……...………………..…….72
表4-4 失效次數紀錄 R2…………………………………………….73
表4-5 各成分錫球失效模式統計次數………………………………73
表4-6 各成分錫球失效模式所佔百分比……………………………74
表4-7 韋伯分佈參數表………………………………………………74





圖目錄
圖2-1 封裝目的………………………………………………………23
圖2-2 電子封裝的五個層級封裝技術………………………………24
圖2-3 球柵陣列封裝體………………………………………………25
圖2-4 BGA封裝體內部線路…………………………………………25
圖2-5 Ceramic BGA 截面圖…………………………………………26
圖2-6 Plastic BGA 截面圖…………………………………………...26
圖2-7 Tape BGA 截面圖……………………………………………..27
圖2-8 Metal BGA 截面圖……………………………………………27
圖2-9 JEDEC衝擊試驗機台示意圖…………………………………28
圖2-10 衝擊模具組示意圖…………………………………………..28
圖2-11 Pulse Duration Definition…………………………………… 29
圖2-12 JEDEC規定之晶片編號……………………………………..30
圖3-1 TFBGA 10x10 181L 晶片.............................48
圖3-2 TFBGA 10x10 181L 晶片內部示意圖………………………..48
圖3-3 NiAu 測試版…………………………………………………...49
圖3-4 測試板設計圖…..……………………………………………..49
圖3-5 JEDEC Standard指定晶片位置……………………………….50
圖3-6 SENJU Sn/Ag/Cu 錫膏………………………………………..50
圖3-7 TFBGA 181L定位鋼板………………………………………..51
圖3-8 高溫儲藏箱……………………………………………………51
圖3-9 紅外線回銲爐…………………………………………………52
圖3-10 光學定位儀器………………………………………………..52
圖3-11 X-Ray 單晶繞射儀…………………………………………..52
圖3-12 以膠帶固定印刷電路板……………………………………..53
圖3-13 定位鋼板與銲墊定位………………………………………..53
圖3-14 輔助放大鏡…………………………………………………..54
圖3-15 塗抹錫膏……………………………………………………..54
圖3-16 正確的錫膏量及位置…………………………………….….55
圖3-17 光學定位儀器細部…………………………………………..55
圖3-18 回銲設定溫度………………………………………………..56
圖3-19 錫膏無橋接的現象…………………………………………..56
圖3-20 橋接現象……………………………………………………..57
圖3-21 掉落衝擊機台………………………………………………..57
圖3-22 Event Detector………………………………………………...58
圖3-23 Agilent示波器………………………………………………..58
圖3-24 Kyowa 應變規……………………………………………….59
圖3-25 Kyowa 應變放大器………………………………………….59
圖3-26 衝擊模具組之構造…………………………………………..59
圖3-27 Strike Surface…………………………………………………60
圖3-28 JEDEC Standard Drop Condition B 衝擊條件………………60
圖3-29 將試片面朝下（Face Down）安裝在治具上………………...61
圖3-30 HOZAN K-110切割機……………………………………….61
圖3-31 MTS Sintech 5/G 拉伸試驗機………………………………62
圖3-32 光學顯微鏡……...…………………………………………...62
圖3-33 顯微鏡擷取影像………...…………………………………...63
圖3-34 超音波震盪機……………………..…………………………63
圖3-35 研磨拋光機………...………………………………………...64
圖3-36 掃描式電子顯微鏡…………………………………………..64
圖4-1 Solder Ball 結構示意圖……………………………………….75
圖4-2 Failure Mode定義……………………………………………...75
圖4-3 Failure Mode 1 on Package Side（Mode B1）…………………..76
圖4-4 Failure Mode 1 on Test Board Side（Mode A1）………………..76
圖4-5 Failure Mode 2 on Package Side（Mode B2）…………………..77
圖4-6 Failure Mode 2 on Test Board Side（Mode A2）………………..77
圖4-7 Failure Mode 3 on Package Side（Mode B3）…………………..78
圖4-8 Failure Mode 3 on Test Board Side（Mode A3）………………..78
圖4-9 Failure Mode C on Package Side………………………………79
圖4-10 Failure Mode C on Test Board Side…………………………..79
圖4-11 Sn2.6Ag0.5Cu 錫球Failure Mode…………………………...80
圖4-12 Sn3.0Ag0.5Cu 錫球Failure Mode…………………………...81
圖4-13 Sn4.0Ag0.5Cu 錫球Failure Mode…………………………...82
圖4-14 Sn0.7Cu 錫球Failure Mode………………………………….83
圖4-15 Sn3.5Ag 錫球Failure Mode…………………………………84
圖4-16 63Sn37Pb 錫球Failure Mode………………………………..85
圖4-17 Sn2.6Ag0.5Cu 特徵壽命與韋伯斜率……………………….86
圖4-18 Sn3.0Ag0.5Cu 特徵壽命與韋伯斜率……………………….86
圖4-19 Sn4.0Ag0.5Cu 特徵壽命與韋伯斜率……………………….87
圖4-20 Sn0.7Cu 特徵壽命與韋伯斜率……………………………...87
圖4-21 Sn3.5Ag 特徵壽命與韋伯斜率……………………………...88
圖4-22 63Sn37Pb 特徵壽命與韋伯斜率……………………………88
圖4-23 韋伯斜率物理意義…………………………………………..89
圖4-24 Mode A1：裂縫發生在Test Board 上………………………..89
圖4-25 Mode A2：裂縫發生在IMC上，下圖為局部放大圖………...90
圖4-26 Mode A3：裂縫發生在接近Test Board端，並且橫跨Solder Ball以及 IMC……………………………………………….91
圖4-27 無裂縫之完美錫球…………………………………...……...92
圖4-28 Partial Crack…………………………………………………..92

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