中文摘要
本研究利用直流磁式濺鍍系統，以銅金屬靶通入氧氣進行反應性濺鍍，經由改變不同氧氣流量比例與濺鍍時的基板溫度以及濺鍍功率，得到不同性質表現之氧化銅薄膜。在材質結構方面，我們以低銳角進行X光繞射分析，在通氧量50%、60%得到較明顯的(002)晶格方向，而隨著基板溫度增加，可長出較好的(111)晶格方向；在光學與電性方面，我們以可見光光譜儀量測氧化銅吸收波段，以計算氧化銅的能隙大小;以四點探針進行阻值分析。在基板溫度為200℃時的能隙大小為1.57eV，阻值為0.77Ω–cm。


關鍵字：氧化銅、薄膜、磁式濺鍍、能隙

Abstract
In this study, copper oxide thin films prepared by DC reactive magnetron sputtering using a Cu target were studied. By changing the oxygen partial pressure ratios and sputtering power and deposition temperatures during sputtering, we obtained copper oxide thin films with different properties. The structures of copper oxide thin films were characterized by glancing incident angle X-ray diffraction. Clear crystal orientation at (002) plane were observed at 50% and 60% oxygen partial pressure ratio. The preferred orientation at (111) plane were observed with heating substrate to 200℃. The optical and electrical properties of cupric oxide thin films were measured by UV-VIS spectrophotometer and four-point probe system. The cupric oxide thin films deposited with heating substrate to 200℃ exhibited the resistivity of 0.77Ω-cm and optical band gap of 1.57 eV.


Keywords：
cupric oxide, thin film, magnetron sputtering, band gap

目錄
論文審定書 I
致謝 III
中文摘要 IV
英文摘要 V
第一章 導論 1
1.1 前言 1
1.2 研究目的與動機 5
1.3 氧化銅與氧化亞銅太陽能電池發展現況 6
第二章 理論基礎與文獻回顧 8
2.1 氧化銅晶格結構特性 8
2.2物理氣相沉積 9
2.3 濺鍍法 11
2.4反應性濺鍍 15
2.5薄膜形成機制 16
第三章 實驗方法與儀器介紹 18
3.1實驗流程規劃 18
3.2氧化銅薄膜製備 19
3.3薄膜量測儀器介紹 21
3.3-1表面輪廓儀(Surface Profiler) 21
3.3-3紫外光-可見光光譜(Ultraviolet/Visible Spectrophotometer) 23
3.3-4雙晶薄膜x光繞射儀 (X-ray diffractmeter, XRD) 25
第四章 量測與分析 29
4.1氧流量對氧化銅薄膜特性之影響 29
4.2退火溫度對氧化銅薄膜特性之影響 33
4.3濺鍍功率對氧化銅薄膜特性之影響 36
4.4基板溫度對氧化銅薄膜特性之影響 39
第五章 結論 43
Reference 44

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