本論文探討了渥采結構之氮化鎵半導體及其合金在自旋電子學與光電子學中應用的潛力。首先於自旋電子學的部分，我們製備了不同鋁含量之氮化鋁鎵/氮化鎵異質結構半導體樣品，使用Subnikov-de Haas量測，研究樣品倒晶格空間中費米波向量與(k-dependence)自旋分裂能量之關係。研究中觀察到，當量子井中的費米能階接近ΔC1 與ΔC3導帶的反交叉點時，可得到較大的自旋分裂能量。我們也呈現了費米波向量與自旋分裂能量之異常關係來自於Rashba與Dresselhaus效應間以及高磁場貢獻的黎曼效應產生的相互干涉。此外，經由非線性曲線擬合，我們從變溫的Subnikov-de Haas量測當中觀測到了type I 非拋物線型能帶之電子有效質量。
在光電子學應用的方面，我們針對了使用電漿輔助式分子束磊晶成長於鋰化鋁酸基板上的氮化鎵材料進行研究。透過定性的分析，我們得到了理想化成長M面氮化鎵薄膜與c面氮化鎵微米碟的磊晶條件。而實驗成長的c面氮化鎵微米碟亦被單一取出作為奈米結構發光二極體的研究。我們於單一氮化鎵微米碟上備製奈米尺寸的歐姆接點，並量得了氮化鎵微米碟的電阻率為7.037E-3 ohm-cm。此外，我們發展了一套背向式製程，利用p型氮化鎵基板作為氮化鎵微米碟發光二極體所需的電極。透過此一製程方式，將可解決渥采氮化鎵奈米結構上電極製作之難題。

The potential of wurtzite GaN and it alloys for applying in the spintronics and optoelectronics has been discussed in this dissertation. For the application of spintronics, AlxG1-xN/GaN samples with different x value have been prepared for the study of the k-dependent spin-splitting in AlxG1-xN/GaN heterostructure by shubnikov-de Haas measurement. A larger spin splitting energy is obtained by pushing the Fermi level in the quantum wells toward the anti-crossing point of ΔC1 and ΔC3 bands. We also demonstrated the spin-orbit interaction by the interference of Rashba, Dresselhaus effects and high-field Zeeman effect in wurtzite GaN/AlxG1-xN heterostructures from SdH measurements, which is yielding an anomalous k-dependent spin splitting energy. Besides, with the nonlinear least-square curve fitting technique, the type I non-parabolic effective mass has been evaluated from the temperature Shubnikov-de Haas measurements.
For the application of optoelectronics, GaN grown on γ-LiAlO2 substrate by plasma-assisted molecular beam epitaxy has been investigated. The optimized growth condition for M-plane epi-film and self-assembled c-plane microdisks has been discussed. In addition, the GaN microdisk has been lifted out for the application of nanostructure LED. The nanoscale ohmic contact has been fabricated on a single GaN microdisk. The resistivity for an awl-shaped GaN microdisk has been measured to be 7.037E-3 ohm-cm. Futhermore, we developed a back processing to fabricate an electrical contact of GaN microdisk on transparent p-type GaN template which can resolve the obstacle of electrical contacts for self-assembled wurtzite nano-devices.

Contents

論文審定書 i
中文摘要 iii
Abstract iv
Abbreviations, Notations and Symbols v
Chapter 1 Introduction 1
1.1 GaN and its alloys…………………………………………………..........1
1.2 Motivation…………………………………………………………............4
1.3 Outline of the dissertation……………………………………..……..........8
Chapter 2 The study of k-dependent spin splitting in AlxGa1-xN/GaN 9
heterostructures with different Al content
2.1 Spin-orbital interaction in wurtzite GaN……………………………..........9
2.2 Shubnikov-de Haas measurement in x-dependent AlxGa1-xN/GaN heterosturtures………………………………………………………….............11
2.3 Shubnikov-de Haas measurement with persistent photoconductivity effect………………………………………………………………....................19
2.4 Summery……………………………………………………………..........27

Chapter 3 Anomalous k-dependent spin-splitting and effective masses for
nonparabolic band in AlGaN/GaN heterosturcture 28
3.1 Type I non-parabolic effective mass………………………………….......28
3.2 The anomalous k-dependent spin splitting………………………….........36
3.3 Summary…………………………………………………………….............39
Chapter 4 The growth of GaN on -LiAlO2 by plasma-assisted molecular
beam epitaxy 40
4.1 -LiAlO2…………………………………………………………...…..40
4.2 Plasma-assisted molecular beam epitxay………………………....42
4-3 M-plane GaN grown on LAO………………………………………....44
4-4 c-plane GaN grown on LAO…………………………………………..51
4-5 Summary…………………………………………………………….....64
Chapter 5 Electrical contact for wurtzite GaN microdisks 65
5.1 Metallic contacts on the single GaN microdisk……………………..66
5.2 Back processing for GaN-based wurtzite nano-devices…………...73
5.3 Summary……………………………………………………………......86


Chapter 6 Conclusion 87

References 89

Appendix 92
Acknowledgement 102
Publications 104

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