論文摘要內容：所有的電子零組件和I.C.等必須經由封裝和電路連接才能夠應用，這方面的技術統稱電子構裝。構裝技術種類繁多，I.C.的封裝為第一層次構裝，目的在於保護元件線路，防止碰損，防止濕氣侵入造成腐蝕和短路；而I.C.晶片訊號對外電路連接則經導電架(lead frame)架構而成。 本實驗將針對Au-Al接合部在高溫的時效處理(aging)後，界面反應相隨時間顯微組織改變的行為，藉觀察材料擴散反應，以暸解微接點由好轉壞的整個過程，期望找出試片在高溫條件的影響下，接合失敗的緣由，並藉試驗後高可靠度的試片，得其wire bonding condition，來改善接合技術，使元件在wire bond方面的參數可達到產品可靠度要求之保證。此次研究分析我們藉由電子微探儀(EPMA)對試片進行微接點顯微組織分析及morphology觀察後發現，接合部相反應層形成關聯為:最早出現的是Au5Al2和Au2Al phase，而後Au5Al2 phase逐漸成為化合物層主要的phase，隨著時效處理時間增加，Au4Al phase出現，且Au5Al2 phase厚度越來越小，而Au4Al phase卻越來越厚，此階段也發現反應層間除了初始接合不良所產生的initial voids外，另有minute voids的出現，我們可以整理出：孔洞是出現在Au4Al phase中靠近Au的邊緣，剛開始是出現一些微小而不連續的孔洞，隨時效時間的增加，孔洞漸漸變大且連續分佈，同時，會隨著擴散過程中Au4Al phase成長的移動，孔洞會朝金球方向向上移動。以這些結果為基礎，我們試著去解釋孔洞形成的機構：我們相信Au4Al phase中Au原子向Al-rich層擴散的原子數目大於Al原子相反方向擴散的數目。這樣便引起空孔（vacancies）堆積、合併進而在Au4Al相靠近Au的界面區域形成孔洞。當反應層形成大尺寸且連續的crack後，即代表接合失敗。

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目錄
壹、前言 1
1-1 研究背景 1
1-2 文獻回顧 3
貳、實驗方法 7
2-1 試片分類 8
2-2 實驗步驟 10
2-2.1 時效處理 10
2-2.2 試片製作 10
2-2.3 試片分析 10
參、實驗結果 12
3-1 剪斷強度測試 12
3-2 金鋁接合部金相組織觀察 13
3-3 孔洞成長觀察 15
肆、討論 17
4-1 金鋁接合部之相變化 17
4-2 孔洞的類型 17
4-3 介金屬化合物和孔洞形成之間的關聯 19
4-4 封裝材料對可靠度的影響 22
伍、結論 24
陸、參考文獻 26
表目錄
表一、試片分類整理表 30
表二、Sample C 接合部化合物層厚度和時效時間的關係 31
表三、Sample A1接合部化合物層厚度和時效時間的關係 32
表四、Sample A2接合部化合物層厚度和時效時間的關係 33
表五、Sample A3接合部化合物層厚度和時效時間的關係 34
表六、Sample A4接合部化合物層厚度和時效時間的關係 35
表七、Sample B1接合部化合物層厚度和時效時間的關係 36
表八、Sample B2接合部化合物層厚度和時效時間的關係 37
表九、Sample B3接合部化合物層厚度和時效時間的關係 38
表十、Sample B4接合部化合物層厚度和時效時間的關係 39
圖目錄
圖一、Au-Al二元相圖 40
圖二、Au-Al-Ti三元相圖 41
圖三、Sample C時效處理時間與剪斷強度曲線圖 42
圖四、Sample C接合部化合物層厚度與時效時間曲線圖 43
圖五、Sample A1接合部化合物層厚度與時效時間曲線圖 44
圖六、Sample A2接合部化合物層厚度與時效時間曲線圖 45
圖七、Sample A3接合部化合物層厚度與時效時間曲線圖 46
圖八、Sample A4接合部化合物層厚度與時效時間曲線圖 47
圖九、Sample B1接合部化合物層厚度與時效時間曲線圖 48
圖十、Sample B2接合部化合物層厚度與時效時間曲線圖 49
圖十一、Sample B3接合部化合物層厚度與時效時間曲線圖 50
圖十二、Sample B4接合部化合物層厚度與時效時間曲線圖 51
圖十三、接合部邊緣crack及反應相分布情形 52
圖十四、化合物層相變化流程圖 53
圖十五、Sample C之mapping影像 54
圖十六-(1)、出現在接合部各型孔洞示意圖(一) 55
圖十六-(2)、出現在接合部各型孔洞示意圖(二) 56
圖十七、initial voids 之示意圖 57
圖十八、Sample A1經短期時效處理後，接合部之BEI影像 58

圖十九、Sample B4經16hours時效處理後,接合部之BEI
影像 59
圖二十、Sample A1經不同時效處理後的BEI影像 60
圖二十一、接合部邊緣相變化 61
圖二十二、（A）Au wire經etching後翻球之SEI影像；
（B）Al pad經翻球後之SEI影像 62
圖二十三、wire bond過程中，Al pad遭受推擠而堆積在ball外圍之示意圖 63

陸、參考文獻
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