摘要

在各種超精密研磨加工機中，研磨顆粒、磨盤（或拋光墊）及加工液皆為消耗品。對於磨盤（或拋光墊）而言，為確保磨盤的加工能力以及維持安定之重現性之加工特性，必須使用修整機構不斷修整磨盤表面。這使磨盤面逐漸變薄，乃至於失去研磨能力，而最終必須更換。為此，本研究室提出連續複合電鍍磨盤式超精密拋光機之構想，以銅磨盤表面複合電鍍Sn-Al2O3之複合鍍層，使磨盤在拋光的過程中，磨盤的拋光能力能由連續複合電鍍方法得以長久確保。這種方法可有效降低各種機械元件和半導體晶圓之超精密研磨成本。

結果顯示，經過60分鐘的連續複合電鍍拋光，銅磨盤表面複合鍍層厚度可成長6.13μm，在拋光的過程中磨盤表面可不斷成長與更新。而晶圓表面被移除10.8μm，表面由原本Ra=0.5453μm、Rmax=5.464μm拋光後達到Ra=0.0019μm、Planess=2.649μm/36mm。

ABSTRACT

The polishing stocks used in various ultra-precision polishing machines consist of abrasives, polishing disk (pad), and polishing fluids. They are expendable goods. To ensure the machining ability and the repeat accuracy of machining characteristics, the polishing disc (pad) must use the dressing mechanism to produce sharp new grains. As a result, the grinding surface on the abrasive wheel becomes thinner gradually, then losses it’s machining ability, and finally must be changed. Hence, in this project, an idea of an ultra-precision abrasive machining is proposed by using the continuous composite electroplating on the polishing disc. In this idea, the machining ability of Cu polishing disc can be ensured due to the use of the continuous Sn-Al2O3 composite electroplating. Hence, it can save the cost of the ultra-precision machining using in the semiconductor wafer.

In this study, after 60 minutes continuous composite electroplated polishing, the thickness of the composite coating on the surface of Cu polishing disc can increase 6.13μm. It means the surface of disc can be grew and renewed at every moment. The removal amount of the wafer is 10.8μm. The surface of wafer was Ra=0.5453μm and Rmax=5.464μm at the start ,but came to Ra=0.0019μm and Planess=2.649μm/36mm after 60 minutes polishing.

目錄

封面……………………………………………………………….Ⅰ
授權書…………………………………………………Ⅱ
論文口試委員審定書…………………………………………Ⅲ
謝誌………………………………………………………Ⅳ
目錄……………………………………………………Ⅴ
圖目錄…………………………………………………Ⅷ
表目錄…………………………………………………XI
中文摘要…………………………………………XⅡ
英文摘要……………………………………………XⅢ

第一章 緒論………………………………………1
1-1 前言……………………………………………1
1-2 研究動機………………………………………3
1-3 文獻回顧………………………………………4
1-3-1 複合電鍍…………………………………4
1-3-2 晶圓拋光…………………………………6

第二章 理論基礎……………………………………11
2-1 電鍍……………………………………………11
2-1-1 電鍍基礎…………………………………13
2-1-2 錫金屬電鍍………………………………21
2-1-3 複合電鍍…………………………………25
2-2 平坦化…………………………………………31
2-3 化學機械拋光…………………………………34
2-3-1 化學機械拋光之加工機制………………35

第三章 實驗設備與實驗方法……………………43
3-1實驗規劃………………………………………43
3-2 實驗設備………………………………………44
3-2-1複合電鍍系統………………………………44
3-2-2循環攪拌系統…………………………………44
3-2-3拋光系統………………………………………44
3-3量測儀器……………………………………………………49
3-4實驗條件…………………………………………51
3-4-1試片前處理…………………………………51
3-4-2試片後處理………………………………54
3-4-3電鍍拋光液配製……………………………56
3-5 實驗步驟…………………………………………58
3-5-1電鍍實驗……………………………………58
3-5-2鍍層拋光能力實驗步驟……………………59
3-5-3 連續複合電鍍拋光實驗步驟………………60

第四章 結果與討論………………………………………61
4-1 複合鍍層……………………………………………61
4-1-1 鍍層表面型態……………….………………61
4-1-2 純錫與複合鍍層成長率……………………76
4-2 純錫鍍層與複合鍍層之拋光能力……………80
4-2-1 無顆粒拋光電鍍液中拋光…………………80
4-2-2 0.3μm Al2O3拋光電鍍液中拋光…………83
4-2-3 連續複合電鍍拋光…………………………86
4-2-4 實驗結果比較……………………………90
4-3 晶圓拋光前後比較……………………………94

第五章 結論與未來研究方向………………………97
5-1結論………………………………………………97
5-2未來研究方向……………………………………98

參考文獻………………………………………………99

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