本論文旨在設計適用於前級輸出放大的垂直電場(TE)極化半導體光放大器(SOA)結構，以及適用於中繼端或後級接收端的極化不敏感結構；另外，為了將元件結構設計為多功能的用途，因此又在光侷限分離層(SCH)的部分加入額外的量子井以供使用。此外，為了利用高能量電子繞射(RHEED)即時瞭解分子束磊晶時試片上的晶格排列與原子動態情形，並且有效地擷取並分析RHEED pattern影像，我們亦架設一套對RHEED具有影像擷取及分析功能之數位裝置。
在TE極化的SOA結構中，為了使加入逆偏壓時，此元件結構也能當作Mach-Zehnder干涉儀使用，所以便在光侷限分離層(SCH)的部分，加入一層晶格匹配的三元化合物InGaAs量子井，希望能藉由此量子井於偏壓時，載子濃度變化(Band-filling/shrinkage)導致的吸收係數變化，使得整體元件結構的折射率變化更加明顯，另外也多加一層高能隙的三元化合物InAlAs以防止載子的移動而影響元件的特性。我們將設計好的此種結構交由MOCVD成長，並由此試片做成的脊型雷射量測結果顯示，此種多功能性的設計結果並不能有效地限制載子的移動，導致元件發光特性不佳。
而在RHEED系統方面，我們則是利用影像擷取卡將CCD與電腦作連結，並針對我們需要的影像處理功能作程式的發展。由RHEED pattern的影像擷取及分析測試結果可知，RHEED系統已成功地架設完成。

The main work of this thesis is to design the TE-polarized SOA structures for booster amplifier, and the polarization-independent SOA structures for preamplifier at receiver end.
In the SOA structure, we add a lattice-matched ternary compound InGaAs as an extra quantum well in separate-confinement heterostructure (SCH) layer. The purpose is to result in the band-filling/shrinkage and lead to change the absorption coefficient. Therefore, the refractive index change will be increased, and the structure can work as a Mach-Zehnder interferometer under reverse bias.
We also added an electron barrier InAlAs layer to reduce the carriers accumulation in the extra InGaAs QW. After the epitaxy of MOCVD, this designed structure was processed to be a ridge laser. From the measurements of ridge laser, the barrier InAlAs could not efficiently stop the carrier injection into the extra InGaAs QW.
The other part of this thesis is to set up a digital signal apparatus to analyze the RHEED pattern on the screen of the chamber. We make a connection between CCD camera and PC utilizing the framegrabber in RHEED system, and develop the programs from LabVIEW and IMAQ to obtain the functions we need. Further, from the tests of grabing and analysis for RHEED pattern, the digital signal system on RHEED pattern has been successfully demonstrated.

第一章 簡介............................................1
1-1 引言........................................1
1-2 半導體光放大器的種類與應用..................3
1-3 論文概要....................................5

第二章 基礎概念原理....................................6
2-1 半導體光放大器基礎概念......................6
2-1-1 SOA操作原理...........................6
2-1-2 SOA特性...............................7
2-2 Mach-Zehnder干涉儀調變器基本原理及特性......9
2-3 應變之基礎概念.............................11
2-3-1 應變力之產生.........................11
2-3-2 應變之種類及特性.....................13

第三章 SOA量子井結構設計與模擬........................16
3-1 材料選擇...................................16
3-2 調變摻雜...................................19
3-3 主動層結構模擬.............................21
3-3-1 垂直電場極化結構.....................21
3-3-2 極化不敏感結構.......................23
3-3-3 量子井混合模擬結構...................25
3-4 i-region結構之設計.........................27

第四章 實驗原理與步驟.................................30
4-1 分子束磊晶成長原理.........................30
4-2 X-ray繞射量測原理..........................33
4-3 高能量電子繞射(RHEED)簡介及原理............36
4-4 RHEED系統架設概念與方法....................39
4-5 實驗步驟與方法.............................44
4-5-1 材料源流量與溫度關係之量測..........44
4-5-2 材料源成長溫度之量測................49
4-5-3 半導體光放大器結構成長與量測........50

第五章 實驗結果與討論................................52
5-1 MOCVD成長結果..............................52
5-2 RHEED系統測試結果..........................55

第六章 結論...........................................57

參考文獻................................................58

附錄A PC-DIG影像擷取卡規格.............................61
附錄B UP-600 CCD camera規格............................62
附錄C MD3QWD完整結構表.................................63
附錄D 影像擷取程式方塊圖...............................64
附錄E 影像光源強度顯示與傅立葉轉換程式方塊圖...........66

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[2] J. J. Bernard, M. Renaud, “Semiconductor Optical Amplifier: A key technology for the all optical networks”, Alcatel Research and Innovation, Marcoussis, France.
[3] C. Rolland, R. S. Moore, F. Shepherd and G. Hillier, “10 Gbit/s, 1.56