論文使用權限 Thesis access permission:校內校外均不公開 not available
開放時間 Available:
校內 Campus:永不公開 not available
校外 Off-campus:永不公開 not available
論文名稱 Title |
電制吸收光調變器磊晶成長及DLTS系統 InP-Based Electro-Absorption Modulator Structures Grown and DLTS System |
||
系所名稱 Department |
|||
畢業學年期 Year, semester |
語文別 Language |
||
學位類別 Degree |
頁數 Number of pages |
106 |
|
研究生 Author |
|||
指導教授 Advisor |
|||
召集委員 Convenor |
|||
口試委員 Advisory Committee |
|||
口試日期 Date of Exam |
2004-06-18 |
繳交日期 Date of Submission |
2004-07-08 |
關鍵字 Keywords |
電制吸收光調變器、深層缺陷暫態頻譜系統 Electro-Absorption Modulator (EAM), Deep-Level Transient Spectroscopy (DLTS) |
||
統計 Statistics |
本論文已被瀏覽 5682 次,被下載 0 次 The thesis/dissertation has been browsed 5682 times, has been downloaded 0 times. |
中文摘要 |
本論文主要分為兩大部份。論文第一部份在設計與量測電制吸收光調變器磊晶結構。我們所設計的磊晶結構分別為:1.5 |
Abstract |
The thesis includes two aspects. The first part includes designs and optical study of electro-absorption modulator structures. Three structures are designed near 1.5 |
目次 Table of Contents |
第一章 EAM簡介 1 第二章 EAM原理 3 2-1 二維量子井 3 2-2 量子侷限史塔克效應 4 2-3 極化不敏感 5 2-4 材料系統 7 第三章 EAM結構設計與模擬 9 3-1 TE 極化多重量子井 9 3-1-1 TE極化對稱式量子井結構 9 3-1-2 TE極化非對稱式量子井結構 12 3-1-3 TE極化量子井結構設計比較 12 3-2 極化不敏感多重量子井 15 3-2-1 應變平衡的極化不敏感多重量子井設計 15 3-2-2 補償量子井的設計 18 第四章 EAM結果與討論 22 4-1 TE極化對稱式量子井結構 23 4-1-1 X-Ray Diffraction 23 4-1-2 光激螢光光譜 24 4-1-3 光電流光譜圖 25 4-2 TE極化非對稱式量子井結構 26 4-2-1 X-Ray Diffraction 26 4-2-2 光激螢光光譜 27 4-2-3 光電流光譜圖 28 第五章 DLTS簡介 29 第六章 DLTS量測原理 31 6-1 缺陷動態動作機制(Trap Dynamics) 32 6-2 電容暫態響應 35 6-3 缺陷參數決定 41 6-4 缺陷的捕捉特性 44 6-5 The Poole-Frenkel effect 46 6-6 量子井似缺陷的載子動態行為 47 第七章 樣品備製與DLTS系統簡述 48 7-1 樣品製作流程 49 7-1-1 TR581 樣品製作流程 49 7-1-2 TR578 樣品製作流程 50 7-2 DLTS量測系統簡述 51 7-2-1 DLTS UNIT 52 7-3 實驗流程 53 第八章 DLTS量測結果與討論 54 8-1 TR578量測結果分析與討論 55 8-1-1 電流-電壓、電容-電壓曲線 55 8-1-2 TR578捕捉暫態 59 8-1-3 TR578 多數載子放射暫態 62 8-1-4 TR578 少數載子放射暫態 73 8-1-5 使用量子井參數分析 76 8-2 TR581量測結果分析與討論 79 8-2-1 電流-電壓、電容-電壓曲線 79 8-2-2 TR581捕捉暫態 82 8-2-3 TR581多數載子放射暫態 87 8-2-4 TR581 少數載子放射暫態 95 8-2-5 使用量子井參數分析 97 8-3 TR578與TR581綜合比較 98 第九章 結論 101 9-1 EAM結論 101 9-2 DLTS結論 102 參考文獻 104 |
參考文獻 References |
[1] M.G. Young, U. Koren, B.I. Miller, M. Chien, T.L. Koch, D.M. Tennant, K. Dreyer and G. Raybon, “Six Wavelength laser array with integrated amplifier and modulator” Electronics Letters, Vol.3, No.21, pp.1835-1836, Oct. 1995. [2] D.A.B. Miller, D.S. Chemla, T.C. Damen, A.C. Gossard, W. Wiegmann, T.H. Wood and C.A. Burrus, “Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect” Physical Review Letters, Vol.53, No.22, pp.2173-2176, Nov. 1984. [3] Y. Chen, J.E. Zucker, N.J. Sauer, and T.Y. Chang, “Polarization- Independent Strained InGaAs/InGaAlAs Quantum-Well Phase Modulators” IEEE Technology Photonics Letters, Vol.4, No.10, pp.1120-1123, Oct. 1992. [4] G. Bastard, E.E. Mendez, L.L. Chang, and L. Esaki, “Variational calculations on a quantum well in an electric field” Phys. Rev. B, Vol.28, No.6, pp.3241-3245, 1983. [5] S. Chelles, R. Ferreira, and P. Voisin, J.C. Harmand, “High performance polarization insensitive electroabsorption modulator based on strained GaInAs-AlInAs multiple quantum wells” Appl. Phys.Lett, Vol.67, pp.247-249, July 1995. [6] Nacer Debber and Pallab Bhattacharya, “Carrier dynamics in quantum wells behaving as giant traps” J. Appl. Phys, Vol.62, pp.3845-3847, Nov. 1987. [7] Liwu Lu, J. Wang, Y. Wang, Weikun, Guowen Yang and Zhanguo Wang, “Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques” J. Appl. Phys, Vol.83, pp.2093-2097, Feb. 1998. [8] K.L. Jiao and W.A. Anderson, “Trap behavior in nonintentionally doped AlGaAs/GaAs single quantum well structures” J. Appl. Phys, Vol.73, pp.271-276, Jan. 1993. [9] X. Letartre and D. Stievenard, “Accurate determination of the conduction-band offset of a single quantum well using deep level transient spectroscopy” Appl. Phys. Lett, Vol.58, pp.1047-1049, Mar. 1991. [10] A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.A. Chelniy, A.G. Milnes, Xiaolei Li, B.M. Leiferov, A.N. Aluev, “Conduction band offsets in InGaAlP/InGaPheterojunctions as measured by DLTS” Materials Science and Engineering B39, pp.79-81, 1996. [11] O. Chretien, R.Apetz, L. Vescan, A. Souifi, H. Luth, “Capture, Storage, and emission of holes in Si/Si1-xGex/Si QW's for the determination of the valence band offset by DLTS” Applied Surface Science 102, pp.237-241, 1996. [12] D.V. Lang, “Deep-level transient spectroscopy: A new method to characterize traps in semiconductors” J. Appl. Phys, Vol.45, pp.3023-3032, July 1974. [13] Masahiko Kondow, Kazuhisa Uomi, Atsuko Niwa, Takeshi Kitatani, Seii Watahiki and Yoshiaki Yazawa, “GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance” Jpn. J. Appl. Phys, Vol.35, pp.1273-1275, Feb. 1996. [14] R. Darwich and B. Massarani, “Effect of fill-pulse parameters on deep-level transient spectroscopy peaks in highly doped p-type InP” J. Appl. Phys, Vol.88, pp.794-799, July 2000. [15] E. Fred Schubert, Doping in III-V Semiconductors, p.75. 1993. [16] P.F. Baude, M.A. Haase, G.M. Haugen, K.K. Law, T.J. Miller, K.Smekalin, J. Phillips and P. Bhattacharya, “Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy” Appl. Phys. Lett, Vol.68, pp.3591-3593, June 1996. [17] E. Fred Schubert, Doping in III-V Semiconductors, p.59. 1993. [18] R.J. Kaplar and S.A. Ringel, “Deep-level in InGaAsN grown by molecular-beam epitaxy” Appl. Phys. Lett, Vol.80, pp.4777-4779, June 2002. |
電子全文 Fulltext |
本電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。 論文使用權限 Thesis access permission:校內校外均不公開 not available 開放時間 Available: 校內 Campus:永不公開 not available 校外 Off-campus:永不公開 not available 您的 IP(校外) 位址是 34.203.242.200 論文開放下載的時間是 校外不公開 Your IP address is 34.203.242.200 This thesis will be available to you on Indicate off-campus access is not available. |
紙本論文 Printed copies |
紙本論文的公開資訊在102學年度以後相對較為完整。如果需要查詢101學年度以前的紙本論文公開資訊,請聯繫圖資處紙本論文服務櫃台。如有不便之處敬請見諒。 開放時間 available 已公開 available |
QR Code |