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博碩士論文 etd-0708111-164654 詳細資訊
Title page for etd-0708111-164654
論文名稱
Title
低能隙噻吩共聚高分子之合成及其光電特性研究
Synthesis and Characterization of Low Bandgap Copolymer based on Thiophene Derivative
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
79
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2011-06-28
繳交日期
Date of Submission
2011-07-08
關鍵字
Keywords
咔唑、交替式導電高分子、低能隙、太陽能電池、混摻異質接面型結構
carbazole, alternating conducting polymer, low band gap, solar cell, bulk heterojunction devices
統計
Statistics
本論文已被瀏覽 5654 次,被下載 3371
The thesis/dissertation has been browsed 5654 times, has been downloaded 3371 times.
中文摘要
現今大部分高效率的有機太陽能電池元件均使用混摻異質接面型(BHJ)結構,結構主要為p-型的施體(共軛高分子)材料及n-型的受體(富勒烯衍生物)材料混摻而成,使之創造出最大接觸面積,激子便能有效的分離。為了使效率超越P3HT/PCBM混成的太陽能電池元件,一個擁有適當光學能隙的導電高分子是重要的材料性質。本研究目的在於設計及藉由Suzuki聚合法合成施體與受體交替式之導電高分子,主要以電子施體咔唑和電子受體多環高共平面性之噻吩衍生物結構為主體結構。並且發現這樣的高分子對一般溶劑仍具良好的溶解性,UV吸收光譜亦可發現其對可見光有良好的吸收。並且因高分子鍊上電子施體和電子受體所形成的交替式導電高分子,因為在其主鏈會形成強大的分子間電荷傳遞(ICT)作用,可使其吸收範圍可擴大至近紅外光區,光學上測量判斷其能隙為1.55eV。成膜之後利用光電子光譜分析儀測試,可以發現此高分子擁有比P3HT更低的HOMO能階,大約是5.0eV。
Abstract
Since the discovery of the photovoltaic effect in bulk heterojunction
devices﹐the considerable publications in PSCs have been reported﹒PSCs
based on the concept of bulk heterojunction (BHJ) configuration where
active layer comprises of a p-type donor (conjugated polymer) and a n-type
acceptor (fullerene derivative) materials﹐represents the most useful strategy
to maximize the internal donor-acceptor interface area allowing for efficient
charge separation﹒To further enhance the power conversion efficiency
from solar cells made of poly(3-hexylthiophene)/[6,6]-phenyl C61 butyric
acid methyl ester (P3HT/PCBM) ﹐ a new conducting polymer with
optimized band energy levels are demonstrated to be one of the key
properties﹒In this study﹐I synthesized a soluble and strongly visible-light
absorbing alternating conducting polymer using Suzuki coupling
polymerization method﹒The UV-Vis absorption spectra of copolymer contains an intramolecular charge transfer (ICT) transition band﹐which
leads to absorption extending to near-infrared region and optical band gaps
is 1.55 eV﹒The photo-electron spectroscopy in air(PESA) measurements
show that the HOMO level of the polymer is ~5.0eV which is lower than
P3HT﹒
目次 Table of Contents
目錄
中文摘要 i
Abstract ii
目錄 iii
圖目錄 v
表目錄 vii
第一章.緒論 - 1 -
1.1有機共軛高分子 - 1 -
1.2導電高分子的導電機制 - 5 -
1.2.1能帶結構 - 5 -
1.2.2偏極子共振導電理論 - 9 -
1.3有機導電高分子在光電元件上應用 - 13 -
1.3.1有機電激發光二極體 - 13 -
1.3.2有機太陽能電池 - 14 -
第二章.低能隙導電高分子 - 17 -
2.1低能隙導電高分子的發展 - 17 -
2.2低能隙導電高分子的種類 - 17 -
2.3高分子能隙的調變 - 20 -
2.4低能隙聚噻吩發展過程 - 21 -
2.5研究動機 - 23 -
第三章.實驗部分 - 24 -
3.1合成流程 - 24 -
3.1.1 3,6-dibromocarbazole - 25 -
3.1.2 3,6-dibromo-9-(2-ethylhexyl)carbazole - 26 -
3.1.3 3,6-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan)-9-(2-ethylhexyl)carbazole - 27 -
3.1.4 bis(2-iodo-3-thienyl)methanol - 28 -
3.1.5 bis(2-iodo-3-thienyl)ketone - 29 -
3.1.6 4H-cycloclopenta[2,1-b:3,4-b’]dithiophen-4-one - 30 -
3.1.7 2,6-dibromo-4H-cyclopenta[2,1-b:3,4-b’]dithiophen-4-one - 31 -
3.1.8 Typical Polymerization Procedure - 32 -
3.2使用儀器、樣品製備 - 33 -
3.2.1核磁共振光譜儀 - 33 -
3.2.2紫外與可見光光譜儀(UV-Vis spectrometer) - 35 -
3.2.3螢光光譜儀(Fluorescence spectrometer) - 37 -
3.2.4 GPC/SEC - 39 -
3.2.5光電子光譜分析儀 (Photo-electron spectroscopy in air) - 41 -
3.2.6熱重分析儀(Thermogravimetric analyzer,TGA) - 43 -
3.2.7熱示差掃描卡量計(Differential scanning calorimetry, DSC) - 45 -
第四章.結果與討論 - 47 -
4.1高分子的熱性質 - 47 -
4.1.1熱重分析(TGA) - 47 -
4.1.2微分示差卡瞄計(DSC) - 48 -
4.2高分子的光學與電學性質 - 49 -
4.2.1紫外光/可見光吸收光譜儀 (UV-Vis Spectrometer) - 49 -
4.2.2螢光光譜儀(PL Spectrometer) - 53 -
4.3分子量 - 56 -
第五章.結論 - 58 -
第六章.參考資料 - 59 -
附件 - 62 -

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