本研究旨在分析高介電層-半導體介面之研究，樣品為氧化釔（Y2O3）/矽、氧化鎵釓（Ga2O3-Gd2O3）/砷化鎵、氧化釓（Gd2O3）/砷化鎵、氧化釓（Gd2O3）/氮化鎵以及氧化鎵釓（Ga2O3-Gd2O3）/氮化鎵。實驗上是利用新竹同步輻射中心光源進行一系列X射線光電子能譜分析，藉由氬離子轟擊樣品逐步清除氧化層的縱深分佈圖及熱處理實驗，以瞭解其組成成分、電子結構以及化學鍵結。
熱處理實驗證實每個樣品皆有吸水的現象。經由譜峰曲線配湊分析，Y2O3 /Si存在著氫氧化物，當溫度升高至300℃時，方能使氫氧化物消失，而且介面已形成Y-Si-O-H的鍵結及含矽的氧化物；Ga2O3-Gd2O3 /GaAs於100℃時，能使氫氧化物消失且在加熱過程發現介面有GaOx以及GaOy的中間態存在；Gd2O3 /GaAs於250℃時，能使氫氧化物消失且在加熱過程並未觀察到氧化砷的存在，而且在介面有GaOx的中間態存在；Gd2O3 /GaN以及（Ga2O3-Gd2O3）/GaN皆觀察到在介面有GaOx的中間態以及非常少量的N-O鍵結形式，而且由X射線光電子能譜的N 1s能態之相對強度比較，（Ga2O3-Gd2O3）/GaN較Gd2O3 /GaN有更穩定的介面。

The purpose of this thesis is to probe microscopic compositions and electronic structures at the high-κdielectric-semiconductor interfaces. The samples are prepared by electron beam evaporation, including Y2O3/Si, (Ga2O3-Gd2O3)/GaAs, Gd2O3/GaAs, Gd2O3/GaN and (Ga2O3-Gd2O3)/GaN. The thermal annealing effects on the interfacial properties have been investigated by depth-profiling X-ray photoelectron spectroscopy (XPS) with synchrotron radiation beam.
The depth-profiling XPS data show the O-H bonding in all the measured oxide layers. For Y2O3/Si, the hydroxide can be removed by surface desorption at 300℃, while a Y-Si-O-H state maintained at the interface. The data suggests that the Y-Si-O-H state is possibly formed in the deposition process. For (Ga2O3-Gd2O3)/GaAs, the hydroxide can be removed by surface desorption at 100℃, and GaOx and GaOy intermediary states have been observed. For Gd2O3/GaAs, the hydroxide can be removed by surface desorption at 250℃, and a GaOx intermediary state has been observed, and no arsenic oxides have been detected. For Gd2O3/GaN and (Ga2O3-Gd2O3)/GaN, a GaOx intermediary state and little N-O bonding have been observed. Comparing the XPS relative intensity of the N 1s states, (Ga2O3-Gd2O3)/GaN shows a more stable interface than Gd2O3/GaN.

第一章 導論 1
1-1 前言 1
1-2 研究目的 3
第二章 實驗原理 4
2-1 X射線光電子能譜理論 4
2-2 同步輻射光源理論 6
2-2-1 簡介 6
2-2-2 同步輻射設備 6
2-2-3 同步輻射特性 8
第三章 實驗系統與方法 11
3-1 實驗樣品 11
3-2 實驗系統 12
3-2-1 同步輻射光束線之選取 12
3-2-2 XPS系統裝置 18
3-3 實驗步驟 21
3-3-1 未經熱處理實驗 21
3-3-2 熱處理實驗 22
第四章 實驗結果與分析 23
4-1 Y2O3/Si之化學能態分析 24
4-2 Y2O3/Si熱處理實驗之化學能態分析 33
4-3 Ga2O3-Gd2O3/GaAs熱處理實驗之化學能態分析 45
4-4 Gd2O3/GaAs熱處理實驗之化學能態分析 50
4-5 Gd2O3/GaN之化學能態分析 56
4-6 Ga2O3-Gd2O3/GaN之化學能態分析 63
4-7 價帶差異之分析 70
第五章 結論 78
參考文獻 79

[1]M. Hong, M. Passlack, J. P. Mannaerts, and J. Kwo, “Low interface state density oxide-GaAs structure fabricated by in situ molecular beam epitaxy,” J. Vac. Sci. Technol., B 14(3), pp. 2297-2300, 1996.
[2]J. Kwo, M. Hong, A. R. Kortan, and K. T. Queeney, “High ε gate dielectrics Gd2O3 and Y2O3 for silicon,” Appl. Phys. Lett., vol. 77, pp. 130-132, 2000.
[3]J. Kwo, M. Hong, A. R. Kortan, and K. L. queeney, “Properties of high κ gate dielectrics Gd2O3 and Y2O3 for silicon,” J. Appl. Phys., Vol. 89, pp. 3920-3927, 2001.
[4]M. Hong, “new frontiers of molecular beam epitaxy with in situ processing,” J.Cryst. Growth, vol. 150, pp. 277-284, 1995.
[5]J. Kwo, D. W. Murphy, M. Hong, and J. P. Mannaerts, “Passivation of GaAs using gallium-gadolinium oxides,” J. Vac. Sci. Technol., B 17(3), pp. 1294-1296, 1999.
[6]F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, and J. R. Lothian, “Demonstration of Enhancement-Mode p-and n-Channel GaAs MOSFET with Ga2O3 (Gd2O3) as Gate Oxide,” Solid-State Electronics, vol. 41, pp. 1751-1753, 1997.
[7]F. Ren, C. R. Abernathy, J. D. Mackenzie, and B. P. Gila, “Demonstration of GaN MIS diodes by usiong AlN and Ga2O3 (Gd2O3) as dielectrics,” Solid-State Electronics, vol. 42, pp. 2177-2181, 1998.
[8]F. Ren, M. Hong, S. N. G. Chu, and M. A. Marcus, “Effect of temperature on Ga2O3 (Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors,” J. Appl. Phys., Vol. 73, pp. 3893-3895, 1998.
[9]F. Ren, S. J. Pearton, C. R. Abernathy, and A. Baca, “GaN metal oxide semiconductor field effect transistors,” Solid-State Electronics, vol. 43, pp. 1817-1820, 1999.
[10]T. S. Lay, K. H. Huang, W. H. Hung, and M. Hong, “Probing the microscopic compositions at Ga2O3 (Gd2O3)/GaAs interface by core level photoelectron spectroscopy,” Solid-State Electronics, vol. 45, pp. 423-426, 2001.
[11]K. H. Baik, P. Y. Park, B. Luo, and K. P. Lee, “Effect of PECVD of SiO2 passivation layers on GaN and InGaP,” Solid-State Electronics, vol. 45, pp. 2093-2096, 2001.
[12]J. J. Chambers, B. W. Busch, and W. H. Schulte, “Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon,” Appl. Surf. Sci., vol. 181, pp.78-93, 2001.
[13]B. W. Busch, J. Kwo, M. Hong and J. P. Mannaerts, “Interface reactions of high-κ Y2O3 gate oxides with Si,” Appl. Phys. Letts., vol. 79, pp. 2447-2449, 2001.
[14]S. C. Choi, M. H. Cho, S. W. Whangbo, and C. N. Whang, “Heteroepitaxial growth of Y2O3 films on Si(100) by reactive ionized cluster beam deposition,” Nuclear Instruments and Methods in Physics Research B, vol. 121, pp. 170.174, 1997.
[15]M. H. Cho, D. H. Ko, and K. Jeong, “Structural transition of crystalline Y2O3 film on Si(111) with substrate temperature,” Thin Solid Films, vol. 349, pp.266-269, 1999.
[16]Yasushige Kuroda, Hideaki Hamano, and Toshinori Mori, “Specific adsorption behavior of water on a Y2O3 surface, ” Langmuir, vol. 16, pp. 6937-6947, 2000.
[17]E. Schröder-Bergen and W.Ranke, “The structure-sensitive adsorption of H2O and H2S on flat and stepped Si(100) surfaces,” Surf. Sci., vol. 236, pp.103-111, 1990.
[18]Y. H. Lai, C. T. Yeh, and W. H. Hung, “Sputtering and etching of GaN surfaces,” J. Phys. Chem. B, vol. 105, pp.10029-10036, 2001.