我們利用已校正之分子束磊晶系統中具有應變的組成，設計並成長三元與四元應變之多重量子井結構。在0.98

The work of this thesis includes molecular beam epitaxy (MBE) and optical study of strained InGaAs and InGaAlAs multiple quamtum well (MQW) structures. Two strained layer structures suitable for devices applications have been designed, grown, and investigated.
The first one is a 0.98-

第一章 導論 1
1-1 前言 1
1-2 論文架構 4
第二章 實驗原理 5
2-1 應變的產生 5
2-2 晶格常數與能隙關係 10
2-3 能隙理論 12
2-4 量子侷限史塔克效應（QCSE） 16
2-5 極化方向不敏感 17
2-6 元件的應用 19
2-6-1 電制吸收調變器 19
2-6-2 半導體光放大器 20
2-7 結構設計與理論模擬 21
2-8 極化不敏感之單量子井結構設計範例 23
第三章 實驗系統 28
3-1 分子束磊晶系統 28
3-1-1 分子束磊晶機台 31
3-2 量測系統簡介 33
3-3 光激螢光光譜（PL）實驗裝置 36
3-4 光電流光譜（Photo current）實驗裝置 39
第四章 實驗方法 43
4-1 晶格匹配與材料組成 43
4-2 應變型磊晶結構的設計 45
4-3 InGaAs/GaAs 壓縮應變型多重量子井結構 46
4-4 InGaAlAs/InP 伸張應變型多重量子井結構 51
第五章 實驗結果與分析 57
5-1 應變型材料系統 57
5-2 InGaAs/GaAs多重量子井結構 59
5-3 InGaAlAs/InP多重量子井結構 67
第六章 結論 72
參考文獻 74
附錄A APPPRARA 程式說明 77
附錄B QCSEOIWF 程式說明 78
附錄C 內建電場的求法 79
附錄D 實驗製程步驟 81
D-1 GaAs 基板清洗與基板溫度校準步驟 81
D-2 InP 基板清洗與基板溫度校準步驟 82
D-3 量測前製程步驟 84

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