為有效提升太陽電池轉換效率，降低CuInSe2吸收層表面再結合速率或提高吸收層能隙皆為可行之道。
本實驗分別使用不同濃度硫化胺溶液，分別針對Cu-rich、In-rich CuInSe2薄膜及CuInSe2：Sb薄膜進行表面被覆及硫化製程前後，在能隙提升、光性及電性上的變化所造成之影響進行探討。實驗結果發現，Cu-rich及In-rich CuInSe2薄膜經硫化胺溶液處理後，能隙值並無提升。而CuInSe2：Sb薄膜使用(NH4)2Sx溶液浸泡後，其PL光譜觀察到在高於CuInSe2能隙的位置有兩個發光峰形成，推斷是CuInSxSe2-x四元化合物形成所致。
此外，也分別製備Mo/P-type CuInSe2/Al及Mo/N-type CuInSe2/Au接面，並量測其電流-電壓特性，確定其為Schottky Contact。

For improving the energy conversion efficiency of solar cells, it is essential to reduce the surface recombination velocity of CuInSe2 absorber layer. The use of quaternary alloys with an increasing band gap gradient was also demonstrated to be effectively increased the open-circuit voltage of the cells.
The experiments using different concentration ammonium sulfur solutions to proceed surface passivation and sulfurization of CuInSe2 and CuInSe2：Sb films have been conducted to evaluate their influences on the band gap and other related properties.
The band gaps of Cu-rich and In-rich CuInSe2 films did not change after ammonium sulfur treatment. For CuInSe2：Sb films after immersing (NH4)2Sx solution, the PL spectra gave an evidence of the formation of the quaternary CuInSxSe2-x alloys.
The metal contacts to CuInSe2 films with the structures of Mo/P-type CuInSe2/Al and Mo/N-type CuInSe2/Au had been fabricated. Their I-V characteristics indicate that the Schottky Contacts had been successfully formed.

第一章 緒論
1.1 前言
1.2 CuInSe2 薄膜結構及性質
1.3 CuInSe2及CuInSe2：Sb薄膜表面處理
1.4 濺鍍法基本原理
1.5 實驗目標及進行步驟
第二章 實驗方法及流程
2.1 CuInSe2 薄膜成長
2.2 金屬薄膜濺鍍
2.3 表面被覆及硫化處理
2.4 薄膜分析儀器
第三章 實驗結果
3.1 Cu-rich之CuInSe2薄膜表面被覆處理
3.2 In-rich之CuInSe2薄膜表面被覆處理
3.3 PL光譜量測與分析
3.4 電流-電壓特性量測
第四章 結論
4.1 CuInSe2 薄膜組成對表面被覆處理之影響
4.2 CuInSe2 薄膜光性及電性量測
第五章 參考文獻

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