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博碩士論文 etd-0709104-020440 詳細資訊
Title page for etd-0709104-020440
論文名稱
Title
覆晶銲料的電子遷移研究
Study on Electromigration of Flip-Chip Solder Interconnect
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
85
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2004-06-18
繳交日期
Date of Submission
2004-07-09
關鍵字
Keywords
電子遷移、銲錫凸塊、覆晶封裝
electromigration, solder bump, Flip-Chip packages
統計
Statistics
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中文摘要
在不斷極小化積體電路元件的趨勢下,覆晶封裝銲錫凸塊的電流密度明顯增大許多,而每個銲錫接頭承受的電流密度可能高達104 A/cm2左右,因此在共晶錫鉛銲料中由於本身的熔點低,在使用溫度時具有高擴散性,造成的電子遷移現象視為可靠度之最主要威脅。
本論文的研究目的主要在探討覆晶封裝共晶錫鉛銲錫凸塊在高電流密度作用下電子遷移效應對其可靠度的影響。本實驗是在電流密度為2×104 A/cm2、1.5×104 A/cm2,晶片表面溫度115℃、95℃的狀況下實驗,測量銲錫凸塊溫度,觀察銲錫凸塊的電阻值變化和平均失效時間,並利用電子顯微鏡及附加能量分析光譜儀觀察拍攝破壞機構。
由實驗的結果得知,在通電流實驗中失效時間較短的試片其銲錫凸塊的主要失效原因是因為電子遷移效應在UBM和銲錫凸塊接觸介面(陰極)產生孔洞而造成,而時間愈久其失效的原因除了電子遷移效應外還會伴隨著熱負載的影響。
Abstract
As the trend of miniaturization of complex integrated circuit(IC) devices, the current density of flip-chip solder bumps have increased significantly and each solder joint is supporting a current density close to or even over 104 A/cm2 .Therefore, in SnPb eutectic solder, which has a high diffusivity at the operating temperature due to its low melting point, the electromigration becomes a major reliability threat.

Thus, the thesis is aimed to investigate the effects of electromigration behavior on flip-chip package eutectic Sn-Pb solder bumps reliability under high current density. The current densities are 2x104 A/cm2 and 1.5x104 A/cm2,the surface of die temperatures are 115℃and 95℃.The bump temperature, the histories of the bump resistance, and mean time to failure (MTTF) testings were conducted. The failure mechanism was observed through SEM and EDS.

From the results of the experiment, the dominant failure mode of the bump is due to electromigration behavior that causes voids at UBM/bump interface (cathode) when the sample’s failure time is shorter. As the failure time is longer, the failure is also resulted from heat effect in addition to electromigration behavior.
目次 Table of Contents
目錄……………………………………………………………………. .I
表目錄…………………………………………………………………..IV
圖目錄…………………………………………………………………...V
中文摘要………………………………………………………………...X
英文摘要…………………………………………………………......XI
第一章 緒論…………………………………………………….……….1
1-1 前言………………………………………………..……….……..1
1-2 文獻回顧…………………………………………….……….…….2
1-3 研究動機和目的……………………………………….……….….6
1-4 組織與章節……………………………………………….………..7
第二章 覆晶封裝和電子遷移現象概述………………………………..8
2-1 微電子封裝簡介……………………………………………..…….8
2-2 覆晶封裝技術介紹……………………………………………....10
2-3 電子遷移………………………………………………………....12
2-3-1 電子遷移的概述…………………………………………......12
2-3-2 電子遷移的原理…………………………………………......13
2-3-3 焦耳熱效應………………………………………………......15
2-3-4 平均失效時間……………………………………………......15
2-4 Weibull分佈……………………………………………………...16
2-4-1 Weibull分佈介紹…………………………………………...…16
2-4-2 Weibull參數求法…………………………………………...…18
2-4-3 故障形態的種類…………………………………………......19
2-4-4 Weibull雙參數的物理意義………………………………...…20
第三章 實驗工作…………………………………………………….…25
3-1 實驗規劃………………………………………………………....25
3-2 實驗用試片介紹………………………………………………....26
3-3儀器設備…………………………………………………………...27
3-4 實驗的前置工作………………………………………………....27
3-4-1 試片組裝…………………………………………………......28
3-5 試片通電流實驗………………………………………………....30
3-6 試片失效模式分析……………………………………………....31
第四章 實驗結果與討論…………………………………………….…41
4-1 銲錫凸塊溫度量測結果………………………………………....41
4-2銲錫凸塊和鋁導線電阻的量測和計算………………………...…42
4-3電阻失效歷程…………………………………………………...…44
4-3-1電阻失效歷程的觀察現象描述…………………………….....44
4-3-2電子流方向對於銲錫凸塊失效的影響…………………….....45
4-3-3 電流密度和溫度對於線路失效機率的影響……………......47
4-4 通電流實驗壽命的Weibull分析………………………………...48
4-4-1 電流密度和銲錫凸塊溫度對平均失效時間的影響……......49
4-5 失效分析………………………………………………………....50
4-6計算Black’s Equation參數……………………………………..53
第五章 結論與未來展望…………………………………………….…80
參考文獻………………………………………………………………..82
參考文獻 References
1.I. A. Blech, ”Electromigration in thin aluminum films on titanium nitride ”, J. Appl. Phys., Vol 47, pp. 1203-1208, 1976.

2.J. R. Lloyd, “Electromigration in thin film conductors” Semicond. Sci. Technol., pp. 1177-1185, 1997.

3.K.N. Tu, “Electronic Thin Film Science for Electrical Engineers and Materials Scientists”, New York, Macmillan, 1992.

4.王祥文,”電遷移效應對錫微結構影響之探討”,國立中央大學化學工程與材料工程研究所碩士論文, 2002。

5.J. R. Black, “Mass Transport of an Aluminum by Momentum Exchange with Conducting Electrons”, IEEE/IRPS International Reliability Physics Symposium, 1967 6th Annual Proceeding, pp.148-159, April 1967.

6.S. Brandenberg, and S. Yeh, “Electromigration Studies of Flip Chip Bump Solder Joints”, Surface Mount International Conference and Exposition, SMI98 Proceedings, pp. 337-344, 1998.

7.“Assembly and Packaging”, The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA , p.223, 1999 Edition.

8. C. Y. Liu, C. Chen, C. N. Liao, and K. N. Tu, “Microstructure- electromigration correlation in a thin stripe of eutectic SnPb solder stressed between Cu electrodes”, Appl. Phys. Lett.,Vol.75, pp. 58-60, 1999.

9. C. Y. Liu, C. Chen, and K. N. Tu, “Electromigration in Sn–Pb solder strips as a function of alloy composition”, J. Appl. Phys., Vol .88, pp. 5703-5709, 2000.

10. T. Y. Lee, and K. N. Tu, “Electromigration of eutectic SnPb solder interconnects for flip chip technology”, J. Appl. Phys., Vol.89, pp. 3189-3194, March 2001.

11. Q. T. Huynh, C. Y. Liu, Chih Chen, and K. N. Tu, “Electromigration in eutectic SnPb solder lines”, J. Appl. Phys., Vol. 89, pp. 4332-4335, April 2001.

12. K. Nakagawa, S. Baba, M. Watanabe, H.Matsushima, K.Harada, E. Hayashi, Q.Wu,Maeda, M.Nakanishi, N.Ued, ”Thermal- Electromigration Phenomena of Solder Bump, Leading to Flip-Chip Devices with 500 Bumps,” Electronic Components and Technology Conference, IEEE Proceedings, 2001.

13. Y-C Hsu,T-L Shao and Chih Chen, ”Electromigration Induced Failure in SnAg3.8Cu0.7 Solder Joints for Flip Chip Technology” Int’l Symposium on Electronic Meterials and Packaging, IEEE, pp.287, 2002.

14. J.D. Wu, P.J. Zeng, Kelly Lee, C.T. Chiu, and J.J. Lee, “Electromigration Failures of UBM/Bump Systems of Flip-Chip Packages”, Electronic Components and Technology Conference, IEEE Proceedings, pp. 452-457, 2002.

15. S. Y. Jang , J. Wolf, W. S. Kwon, K. W. Paik, “UBM (Under Bump Metallization) Study for Pb-Free Electroplating Bumping : Interface Reaction and Electromigration”, Electronic Components and Technology Conference, IEEE Proceedings, pp. 1213-1220 , 2002.

16. W.J. Choi, E.C.C. Yeh, and K.N. Tu, ”Electromigration of Flip Chip Solder Bump on Cu/Ni(V)/Al Thin Film Under Bump Metallization,” Electronic Components and Technology Conference, IEEE Proceedings, pp. 1201-1205, 2002.

17. T. Y. Tom Lee, T. Y. Lee, and K. N. Tu, “A Study of Electromigration in 3D Flip Chip Solder Joint Using Numerical Simulation of Heat Flux and Current Density”, Electronic Components and Technology Conference, pp. 558-563, Orlando, FL, US, June 2001.

18. C. C. Yeh, W. J. Choi, and K. N. Tu, “Current-Crowding-Induced Electromigration Failure in Flip Chip Solder Joints”, J. Appl. Phys., Vol. 80, pp. 580-582, Jan. 2002.

19.黃家緯,“析鍍條件對銲錫隆點底層金屬無電鍍鎳之成長與擴散障礙行為之影響”,國立成功大學材料工程研究所碩士論文, 2000。

20. J. Lau, C. P. Wong, J. L. Prince, W. Nakayama, Electronic Package Design, Materials, Process, And Reliability, (McGraw-Hill), 1998.

21.羅金龍,” 58Bi-42Sn無鉛銲料與球矩陣封裝中Au/Ni/Cu墊層界面反應之研究”,國立中央大學化學工程與材料工程研究所碩士論文,2001。

22.P. A. Totta and R. P. Sopher, IBM J. Res. Dev., Vol 13, pp. 226-238, 1969.

23.H. Gan, G. Xu and K. N. Tu, “Unique Phase Changes Induced by Electromigration (EM) in Solder Joints”, Electronic Components and Technology Conference, IEEE Proceedings, pp. 71-76, 2003.

24.陳志銘,” 電遷移對無鉛銲料與基材界面反應之影響”,國立清華大學化學工程研究所博士論文,2002。

25.V. B. Fiks, Soviet Physics – Solid State, Vol. 1, pp. 14-28, 1959.

26.H. B. Huntington and A. R. Grone, Journal of Physics and Chemistry of Solids , Vol. 20, pp. 76-87, 1961.

27.C. Bosvieux and J. Friedel, Journal of Physics and Chemistry of Solids, Vol. 23,pp. 123-136, 1962.

28. R. S. Sorbello, Journal of Physics and Chemistry of Solids, Vol. 34, pp. 937-950, 1973.

29. K. N. Tu, J. W. Mayer, and L. C. Feldman, Electronic Thin Film (Science Macmillan), New York, Ch. 14, 1992.

30. J. R. Black, “Electromigration-A brief survey and some recent results”, IEEE trans. Electron Devices, 1969.

31. J. R. Black, “Physis of Electromigration”, IEEE Proceedings, 1983.

32. http:// www.weibull.com

33.陳耀茂,”可靠度工程-方法與應用”,五南圖書出版書局,2001。
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