本論文研究主題分為二大部份： (1)分子束磊晶再成長技術探討 (2)氧化矽抗反射鍍膜之研究。在分子束磊晶再成長技術探討方面，我們以硫化銨鈍化InAlGaAs/InP樣品表面，由XPS光電子能譜實驗，比較鈍化前後XPS譜圖得知，經鈍化後的試片，可有效降低表面氧含量，適合二次磊晶的要求；因此我們架設分子束磊晶再成長系統，進行鈍化技術之研究，並討論機台實驗參數，發現鈍化後的試片，經真空剝離及昇溫加熱的除硫手續，可得符合再成長需求的界面。
對再成長磊晶層之設計，我們以Fimmwave模擬軟體，設計Beam Expander Laser結構經再成長後之脊狀波導型態，發現當脊狀波導寬度為2.5 mm，波導蝕刻深度為1.4 mm時，可得水平發散角為27.88度，垂直發散角為27.76度，為一接近圓形的光模，可提升與光纖間的耦合效率；在元件積體化方面，以BeamProp 3D軟體設計最佳夾層波導結構，得到與元件區相當吻合的光模，使光傳播損失小至0.21%以下。
第二部份為氧化矽鍍膜材料之研究，我們以穿透率、橢圓儀等量測方式，分別測定氧化矽材料的折射率，發現其在1.55 mm波段折射率為1.8837，於磷化銦基板上之最佳抗反射鍍膜厚度為2057&Aring;；為在不同有效折射率元件上，保有抗反射效果，我們以Macleod 軟體設計雙層鍍膜方式，以降低鏡面反射率。以Beam Expander Semiconductor Optical Amplifier (BESOA)元件而言，製鍍SiO2 / SiO薄膜及Si3NX / SiO雙層膜，與氧化矽單層材料比較，反射率分別下降16.86%及25.12%，而R < 1% 的波長範圍(Bandwidth)擴展了200 &Aring;。

The thesis consists of two aspects: (1) Research on regrowth by molecular beam epitaxy, and (2) Silicon monoxide coating. In part one, we used (NH4)2Sx to passivate the InAlGaAs/InP surface. From the X-ray photoelectron spectroscopy (XPS), the passivated surface shows a dramatic reduce of oxidation. A preparation chamber for the regrowth has been setup to proceed the sulfur passivation method. We can obtain a clean surface for regrowth after heating and putting samples in the high vacuum chamber.
In the design of regrowth layers, we have found the best waveguide structure by regrowth. When the ridge width is 2.5 mm with etching depth 1.4 mm, a circular mode profile can be obtained by Fimmwave simulation. In the integration between devices, we have designed the best waveguide structure after regrowth by BeamProp 3D. The best design will make the propagation loss smaller than 0.21%.
The second part is anti-reflection (AR) coating by silicon monoxide (SiO) deposition. The SiO refractive index of 1.8837 was obtained by transmission, and ellipsometer measurements. The corresponding AR coating thickness for InP substrate is 2057 &Aring;. In order to make AR coating on lasers of different effective index, we design the double-layer coating. For Beam Expander Semiconductor Optical Amplifier (BESOA), SiO2 / SiO and Si3NX / SiO double-layer coatings were compared with SiO single layer. The reflectance (R) was reduced 16.86 % and 25.12 %, respectively, and the R < 1% bandwidth extends 200 &Aring;.

目錄

第一章 緒論 1
1-1 前言 1
1-2 光電子積體電路簡介 2
1-3 氧化矽鍍膜材料介紹 4
1-4 論文架構 5

第二章 分子束磊晶基本概念及系統架構 6
2-1 分子束磊晶原理 6
2-1-1 晶格匹配與能隙 6
2-1-2 X光繞射 - Rocking Curve 8
2-2 分子束磊晶系統架構 10
2-2-1 磊晶成長腔體 12
2-2-2 磊晶成長週邊系統 15
2-3 再成長系統之架設 17

第三章 磊晶結構設計與模擬 20
3-1 Beam Expander Laser結構之二次磊晶設計 20
3-2 積體元件光波導結構再成長之模擬 23

第四章 分子束磊晶實驗原理及方法 33
4-1 分子束磊晶系統操作 33
4-2 半導體界面鈍化技術 35
4-2-1 硫化鈍化技術介紹 37
4-2-2 各種硫化鈍化技術之比較 39
4-2-3 以XPS檢測硫化銨鈍化半導體界面效果 41
4-3 分子束磊晶再成長技術探討 44
4-3-1 硫化鈍化技術之應用 44
4-3-2 再成長光波導材料之選擇 46

第五章 再成長技術實驗結果與討論 49
5-1 使用XPS 分析半導體界面鈍化效果 49
5-2 再成長系統實驗參數建立 53

第六章 氧化矽鍍膜基本概念及系統架構 57
6-1 光學薄膜製鍍理論 57
6-1-1 單層抗反射膜製鍍原理 60
6-1-2 以氧化矽製鍍單層抗反射膜 63
6-2 分子束薄膜沉積系統原理及架構 65

第七章 氧化矽鍍膜實驗原理及方法 69
7-1 測定氧化矽材料折射率 69
7-1-1 製鍍AR / HR 膜層 69
7-1-2 穿透率頻譜量測系統 70
7-1-3 橢圓儀量測系統 72
7-2 微調氧化矽材料折射率 74
7-3 製鍍抗反射膜之最佳化計算 76

第八章 氧化矽鍍膜實驗結果與討論 87
8-1 測定氧化矽材料於光纖通訊波段(1.55 mm)折射率 87
8-2 微調材料折射率對增進抗反射效果之探討 96
8-3 製鍍氧化矽抗反射膜於雷射鏡面之成效 99

第九章 結論 102

參考文獻 103
附錄A MathCAD穿透率計算程式 106
附錄B 常用抗反射膜製鍍材料比較 107
附錄C 穿透率頻譜量測系統 108
附錄D Essential Macleod 8.3 薄膜製鍍設計程式 109

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